ixgh30n60c3d1
Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
IF110
O-247)
O-268
O-247
600v 30A fast recovery diode
g30n60c3
Tvj-150
30N60C3
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IXGH30N60C3D1
Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ
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Original
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PDF
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IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
ID110
IXGH30N60C3D1
30N60C3
G30N60
g30n60c3
30C17
IXGT30N60C3D1
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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PDF
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IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
IF110
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