IXXN110N65C4H1 Search Results
IXXN110N65C4H1 Price and Stock
IXYS Corporation IXXN110N65C4H1IGBT MOD 650V 210A 750W SOT227B |
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IXXN110N65C4H1 | Tube | 300 | 1 |
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IXXN110N65C4H1 | Tube | 46 Weeks | 300 |
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IXXN110N65C4H1 | Tube | 274 | 1 |
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Littelfuse Inc IXXN110N65C4H1Transistor, Igbt, 650V, 210A, Sot-227B; Continuous Collector Current:210A; Collector Emitter Saturation Voltage:2.06V; Power Dissipation:750W; Operating Temperature Max:175°C; Igbt Termination:Tab; Collector Emitter Voltage Max:650V Rohs Compliant: Yes |Littelfuse IXXN110N65C4H1 |
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IXYS Integrated Circuits Division IXXN110N65C4H1IGBT MOD.DIODE SINGLE 110A 650V XPT SOT227B |
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IXXN110N65C4H1 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IXXN110N65C4H1 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 650V 210A 750W SOT227B | Original |
IXXN110N65C4H1 Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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Untitled
Abstract: No abstract text available
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Original |
IXXN110N65C4H1 20-60kHz IC110 OT-227B, E153432 IF110 110N65C4 1-30-13-A | |
IXXN110N65C4H1
Abstract: E8 55A DIODE ixxn110n65c z 683
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20-60kHz IXXN110N65C4H1 IC110 OT-227B, E153432 IF110 50/60Hz 100N65C4H1 IXXN110N65C4H1 E8 55A DIODE ixxn110n65c z 683 |