Untitled
Abstract: No abstract text available
Text: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE SAT typ tfi(typ) Light Speed Series = 600 V = 60 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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32N60CD1
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM = 600 V = 45 A = 2.1 V = 55 ns VCES IC25 IXGR 32N60CD1 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
32N60CD1
Featu150
32N60CD1
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Untitled
Abstract: No abstract text available
Text: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat typ tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V
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32N60C
ISOPLUS247TM
IC110
E153432
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Untitled
Abstract: No abstract text available
Text: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms
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32N60CD1
32N60CD1
O-247
O-268
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Untitled
Abstract: No abstract text available
Text: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package VCE IC25 VCE sat typ tfi typ (Electrically Isolated Back Side) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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32N60C
ISOPLUS247TM
IC110
247TM
E153432
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32N60CD1
Abstract: diode fr 307
Text: IXGH 32N60CD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE SAT typ tf1(typ) Light Speed Series = 600 V = 60 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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32N60CD1
O-247
32N60CD1
diode fr 307
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Untitled
Abstract: No abstract text available
Text: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode VCE SAT typ tfi(typ) Light Speed Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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32N60CD1
O-247
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2x31-06B
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V
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ISOPLUS247TM
32N60CD1
247TM
2x31-06B
2x31-06B
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98651a
Abstract: ic-110
Text: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package VCE IC25 VCE sat typ tfi typ (Electrically Isolated Back Side) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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32N60C
ISOPLUS247TM
IC110
247TM
98651a
ic-110
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IXGH32N60C
Abstract: 32N60C IXGH32N60
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C
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32N60C
IC110
O-268
O-247
IXGH32N60C
32N60C
IXGH32N60
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms
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32N60CD1
32N60CD1
O-247
O-268
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings IC25 TC = 25°C 60 A IC90 TC = 90°C 32
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32N60CD1
O-247
32N60CD1
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32N60CD1
Abstract: 30-1000T
Text: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 VCE SAT typ tfi(typ) Light Speed Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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32N60CD1
O-247
32N60CD1
30-1000T
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V
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ISOPLUS247TM
32N60CD1
247TM
2x31-06B
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C
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32N60C
O-268
IC110
O-247
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20-600T
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C
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ISOPLUS247TM
32N60CD1
2x31-06B
20-600T
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Untitled
Abstract: No abstract text available
Text: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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ISOPLUS247TM
IC110
32N60C
728B1
123B1
065B1
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32N60C
Abstract: IXYS 32N60C
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C
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32N60C
32N60C
IC110
O-268
O-247
IXYS 32N60C
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BC 247 B
Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
BC 247 B
IXGH32N60
DIODE SMD GEM
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Untitled
Abstract: No abstract text available
Text: □ IXYS H H ifl JL æ* X IXGH 32N60CD1 HiPerFAST IGBT with Diode VCES I C25 VCE SAT typ tf1(typ) Light Speed Series V A V ns 600 60 2.1 55 Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i
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32N60CD1
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IXGH32N60C
Abstract: No abstract text available
Text: □ IXYS HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS VCES IC25 V CE sat typ tfity p 600 V 60 A 2.1 V 55 ns Prelim inary Data Sheet Symbol TestConditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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IXGH32N60C
IXGH32N60CS
O-247
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KM10T
Abstract: No abstract text available
Text: HiPerFAST IGBT Lightspeed™ Series V CES IXGH 32N60C IXGT 32N60C ^C25 V CE sat typ ^ fity p 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings T j = 25°C to 150°C 600 V Tj = 25° C to 150° C; RQE = 1 MQ 600 V Continuous
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32N60C
32N60C
O-247
KM10T
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IXGR32N60CD1
Abstract: No abstract text available
Text: □ TXYS HHifl JLæ* 3k. X HiPerFAST IGBT with Diode ISOPLUS247™ IXGR 32N60CD1 = 600 V = 45 A = 2.1 V = 55 ns V,CES IC25 V CE SAT typ ^fi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol TestC onditions V C ES Tj = 25°C to 150°C 600
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ISOPLUS247â
32N60CD1
IXGR32N60CD1
IXGR32N60CD1
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ge motor 752
Abstract: IXGH32N60
Text: Q T X Y<*JLS w B w A- 4>C HiPerFAST IGBT Lightspeed™ Series IXGH 32N60C IXGT 32N60C VCES ^C25 V CE sat typ fi typ 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ
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32N60C
32N60C
O-268
O-247
ge motor 752
IXGH32N60
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