82N25P
Abstract: IXYS 82N25P 82n25
Text: IXTQ 82N25P IXTT 82N25P IXTK 82N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 82 A Ω = 35 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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82N25P
O-264
065B1
728B1
123B1
728B1
82N25P
IXYS 82N25P
82n25
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82N25P
Abstract: TO-264 Package 5 lead 82n25 C500W ixtq IXYS 82N25P Ixtq82n25p
Text: IXTK 82N25P IXTQ 82N25P IXTT 82N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 82 A ≤ 35 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
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82N25P
82N25P
TO-264 Package 5 lead
82n25
C500W
ixtq
IXYS 82N25P
Ixtq82n25p
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82N25P
Abstract: IXYS 82N25P
Text: IXTQ 82N25P IXTT 82N25P IXTK 82N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 82 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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82N25P
82N25P
O-264
O-264
O-268
IXYS 82N25P
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82N25P
Abstract: No abstract text available
Text: IXTK 82N25P IXTQ 82N25P IXTT 82N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 82 A ≤ 35 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
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82N25P
82N25P
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IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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STW20N60
Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal
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O-220,
ISOPLUS220TM,
O-247,
ISOPLUS247TM,
O-264,
ISOPLUS264TM.
PLUS220
ISOPLUS220TM
PLUS220SMD
O-252
STW20N60
2n60p
IXFB100N50
IXFB100N50P
STW20N60FD
IXFB100N50P TO-264
ixys ixfn100n50p
IXFN48n60p
IXFH30N60P
ixfn100n50p
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DIODE 1334
Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205
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110N055P-5S
75N10P-5S
110N10P-6S
140N10P-7S
170N10P-8S
200N10P-88
62N15P-5S
96N15P-6S
120N15P-7S
150N15P-8S
DIODE 1334
1334 diode
96N20
36N30P equivalent
88N30
100N25P
36N30
IXTP75N10P
IXTP IXTP IXTP IXTP
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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