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    IXYS MWI 35-12 A5 Search Results

    IXYS MWI 35-12 A5 Datasheets Context Search

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    diode b3

    Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
    Text: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3


    Original     		PDF 35-12A5 50-12A5 75-12A5 B3-12 75-12A3 75-12A3 B3-16 100-12A3 diode b3 MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 200-12A4 10-06A6

    D-68623

    Abstract: E72873
    Text: MWI 50-12 A5 IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C


    Original     		PDF D-68623 E72873

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    bt 2025

    Abstract: No abstract text available
    Text: IGBT Modules Sixpack ^C25 VCES VCE sat typ. 60 A 1200 V 2.2 V Short Circuit SOA Capability Square RBSOA E 72873 Preliminary data Symbol Conditions Maximum Ratings vCES vCGR VeES v GEM T j = 25°C to 150°C 1200 V 1200 V Continuous ±20 V Transient ±30 V


    OCR Scan     		PDF D-68623 bt 2025

    Diode RJ 4B

    Abstract: No abstract text available
    Text: B iX Y S MW! 50-12 A IGBT Modules iC25 S ix p a c k VCES ces CE sat typ. S ym bol C o n d itio n s V CES V CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 20 kQ 1200 V M axim um R atings v"GES Continuous ±20 V VGEH Transient ±30 V 'c * Tc = 25°C


    OCR Scan     		PDF D-68623 Diode RJ 4B