J35Z Search Results

J35Z Price and Stock

Filter by Manufacturer


onsemi BC559_J35Z TRANS PNP 30V 0.1A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC559_J35Z	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.04943	Buy Now
onsemi BF199_J35Z RF TRANS NPN 25V 1.1GHZ TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF199_J35Z	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.05462	Buy Now
onsemi BC308_J35Z TRANS PNP 25V 0.1A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC308_J35Z	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.03996	Buy Now
onsemi BC32825_J35Z TRANS PNP 25V 0.8A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC32825_J35Z	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.06089	Buy Now
Avnet Americas	BC32825_J35Z	Bulk			6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi BC33725_J35Z TRANS NPN 45V 0.8A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC33725_J35Z	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more J35Z price and stock on Findchips.com

J35Z Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TO-92 Package Dimensions Abstract: L34Z J35Z Leadform Text: TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form J35Z Option (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed	Original	PDF
J35Z Abstract: L34Z Text: Package Information TO-92 Tape and Reel Data and Package Dimensions, continued TO-92; TO-18 Reverse Lead Form J35Z Option (FS PKG Code 92, 94, 96, 97, 98) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22	Original	PDF
MOSFET bs170 Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high	Original	PDF	BS170 MMBF170 500mA MOSFET bs170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
F63TNR Abstract: PN2222N BS270 CBVK741B019 Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to	Original	PDF	BS270 500mA 400mA, F63TNR PN2222N BS270 CBVK741B019
MMBF170 Abstract: BS170 application note BS170 CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92 Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high	Original	PDF	BS170 MMBF170 500mA MMBF170 BS170 application note CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92
BSS110 Abstract: BSS84 Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	BSS84 BSS110 BSS84: BSS110: BSS110
BS270 Abstract: J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to	Original	PDF	BS270 500mA 400mA, BS270 J60Z D72Z CBVK741B019 F63TNR PN2222N J35Z
BSS100 Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123 Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	PDF	BSS100 BSS123 BSS100: BSS123: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
2N4401_D11Z Abstract: Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles BOXTNR Label 5 Reels per Intermediate Box Customized Label F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box AMMO PACK OPTION	Original	PDF	F63TNR 375mm 267mm 327mm 158mm 135mm 333mm 231mm 183mm 2N4401_D11Z Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z
D72Z Abstract: CBVK741B019 F63TNR PN2222N D73Z J32Z Text: TO-226AE Tape and Reel Data TO-226 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION CBVK741B019 LOT: PN2222N NSID: D/C1: QTY: See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:	Original	PDF	O-226AE O-226 CBVK741B019 PN2222N D9842 F63TNR PN222N F63TNR D9842AB D72Z CBVK741B019 PN2222N D73Z J32Z
BSS110 Abstract: BSS84 CBVK741B019 F63TNR PN2222N Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	BSS84 BSS110 BSS84: BSS110: BSS110 CBVK741B019 F63TNR PN2222N
Untitled Abstract: No abstract text available Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to	Original	PDF	BS270 500mA 400mA,
BSS110 Abstract: BSS84 Text: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	BSS84 BSS110 BSS84: BSS110: BSS110
BSS100 Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92 Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	PDF	BSS100 BSS123 BSS100: BSS123: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92

bs270 Abstract: J35Z Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to	Original	PDF	BS270 500mA 400mA, J35Z