Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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OT-23
S9014LT1
S9015LT1
30MHz
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S9014
Abstract: transistor SOT23 J6
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9014
OT-23
S9015
30MHz
S9014
transistor SOT23 J6
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9014
OT-23
S9015
30MHz
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transistor SOT23 J6
Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9014
OT-23
S9015
30MHz
transistor SOT23 J6
S9014 SOT-23
transistor S9014
S9014
S9014 sot-23 J6
s9014 equivalent
marking J6
s9015 SOT23 transistor
j6 sot23
S9014 J6
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transistor S9014
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9014
OT-23
S9015
30MHz
transistor S9014
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Contrans V17131
Abstract: contrans I contrans J1 TRANSISTOR V17131-16 B10K transistor BA 14 DIN19234 Contrans V17131-53 10KJ1
Text: Trennschaltversta¨rker V17131-16 2 Kana¨le, 2 x Transistorausgang J3 J6 • Anschluß Initiatoren, Schaltkontakte, Na¨herungsschalter HB Contrans I A B & ■ galvanische Trennung zwischen Einga¨ngen, Ausga¨ngen und Energieversorgung ■ Drahtbruch- und Kurzschlußu¨berwachung
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V17131-16
Contrans V17131
contrans I
contrans
J1 TRANSISTOR
V17131-16
B10K
transistor BA 14
DIN19234
Contrans V17131-53
10KJ1
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transistor SOT23 J6
Abstract: transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23
Text: S9014 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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S9014
OT-23
OT-23
S9015
30MHz
transistor SOT23 J6
transistor S9014
S9014 SOT-23
j6 sot23
J6 transistor
j6 transistor sot-23
SOT-23 j6
transistor npn s9014
S9014 J6
J6 SOT 23
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Untitled
Abstract: No abstract text available
Text: DMA56604 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: J6 Basic Part Number
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DMA56604
UL-94
DRA2114Y
DMA566040R
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Untitled
Abstract: No abstract text available
Text: .%3:' ,QVWDOODWLRQ DQG 2SHUDWLRQ 0DQXDO 5HY $ 6XSSOHPHQWDO ,QIRUPDWLRQ &KDQJHV WR :LULQJ 6HFWLRQ ,* RQ 3DJH G. Remote Start/Stop Switch Connections The control is supplied with a prewired Start/Stop Switch with a normally open "NO" stop contact. Jumper J6 is factory set to the "NO" position.
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KBPW-240D
A40360)
A40194)
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to TP9015NND03
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WBFBP-03B
WBFBP-03B
TP9014NND03
TP9015NND03
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M
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WBFBP-03B
WBFBP-03B
S9014M
S9015M
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j6 transistor
Abstract: transistor j6 marking J6 transistors marking J6
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to TP9015NND03
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WBFBP-03B
WBFBP-03B
TP9014NND03
TP9015NND03
TP9014NND03
j6 transistor
transistor j6
marking J6 transistors
marking J6
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202319A
Abstract: No abstract text available
Text: EVALUATION BOARD DATA SHEET EV183 Evaluation Board for the AAT2822/2823/2824/2825 TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer Introduction The AAT282x family AAT2822, AAT2823, AAT2824, AAT2825 of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor (TFT) liquid-crystal display (LCD). The AAT282x family
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EV183
AAT2822/2823/2824/2825
AAT282x
AAT2822,
AAT2823,
AAT2824,
AAT2825)
AAT282x-1
202319A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M
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WBFBP-03B
WBFBP-03B
S9014M
S9015M
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MIC79110
Abstract: 030405 CRCW06034021FRT1 GRM188R60J475KE19D GRM21BR61C225KA88L MIC79110BML MLF-10 CRCW06031001FRT1 CRCW06031002FRT1
Text: MIC79110 Evaluation Board Simple 1.2A Linear Li-Ion Battery Charger General Description The Micrel MIC79110 is a simple and accurate Li-Ion battery charger. Featuring a built-in pass transistor, precision programmable current limiting ±5% , precision voltage termination (±1% over temperature)
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MIC79110
550mV
MIC79110
M9999-030405
030405
CRCW06034021FRT1
GRM188R60J475KE19D
GRM21BR61C225KA88L
MIC79110BML
MLF-10
CRCW06031001FRT1
CRCW06031002FRT1
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AN1370
Abstract: AN-1370 LM5034 LM5034EVAL si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration
Text: National Semiconductor Application Note 1370 Dennis Morgan February 2005 Introduction slope compensation, direct interface with opto-coupler transistor, and thermal shutdown. The LM5034EVAL evaluation board provides the power supply design engineer with a fully functional 200W dual interleaved DC-DC power switching regulator using forward/
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LM5034EVAL
LM5034
CSP-9-111C2)
CSP-9-111S2)
CSP-9-111S2.
AN-1370
AN1370
AN-1370
si7866dp
SOT-23 P-MOSFET
optocoupler 8 pin configuration
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EM- 546 motor
Abstract: TACHOMETER Magnetic Tachometer
Text: BRIDGE C IR C U IT DRIVES APPLICATION NOTE 3 POWER OPERATIONAL AMPLIFIER H T T P : / / W W W . A P EX M I C R 0 T EC H . CO M M I C I 0 T E C N N 0 L 0 6 Y [j6 m Ä ] 800 546 - A PEX (800) 546-2739 [}1 0 V 7 ] [j6 m Ä ] +35V [W] FOR V|N = Q 5 ] : 5 .9V + 1,6V + 10V = 17.5V
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bo434
Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages
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00043bfl
BD434
BD440
BD442
BD441.
t25mn
434/BD
436/BD
023SbOS
G00437H
bo434
b0436
TRANSISTOR BD 437
BD 434
transistor BD 141
BD436
DIN137
80442
transistor 438
Q62702-D202
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode 12 • Avalanche-rated V»;05'J6 i Pin 1 Pin 2 G Type BUZ 308 Vbs 800 V 2.6 A ^DS on 4 fl Pin 3 s D Package Ordering Code TO-218AA C67078-S3109-A2 Maximum Ratings Parameter Symbol
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O-218AA
C67078-S3109-A2
O-218
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2SB1335A
Abstract: No abstract text available
Text: h "7 O 2SB1335A /Transistors C R 4 3 3 5 A W w w # ^ * £ * * ' > 7 ^ : / V - : ^ P N P y ÿ i i > h 7 > y 2 * Epitaxial Planar PNP Silicon Transistor Fraq. Power Amp. > i /Dim ensions Unit : mm • ttft 1 ) VcE (sat) A'*j6 l ' 0 _ io .n l“ ; VcE (s a t)= —0.5V (Typ.)
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2SB1335A
O-220FP
SC-67
2SB1335A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG30J6ES50 TOSHIBA GTR M O D U LE SILICON N C HANN EL IGBT M G 3 G J6 E S 5 G HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The Electrodes are Isolated from Case. High Input Impedance. 6 lOBTs Built Into 1 Package, Enhancement- Mode.
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MG30J6ES50
--30A,
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Untitled
Abstract: No abstract text available
Text: OLE D N AMER PHILIPS/DISCRETE MAINTENANCE TYPE • bbS3T31 DDmT 31 LJE42002T T*- 3 3 - 0 S' MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-emitter class-A amplifiers up to 4 GHz.
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bbS3T31
LJE42002T
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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