J681 TRANSISTOR Search Results

J681 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
DE6B3KJ681KN4AE01J		Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ681KA4BE01J		Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ681KB4BE01J		Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive

J681 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor J681 Abstract: J681 j681 transistor 2sj681 Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z 4-V gate drive １．６ z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)	Original	2SJ681 transistor J681 J681 j681 transistor 2sj681	PDF
j681 transistor Abstract: No abstract text available Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z 4-V gate drive z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)	Original	2SJ681 j681 transistor	PDF
transistor J681 Abstract: 2SJ681 J681 j681 transistor tr j681 Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: \|Yfs\| = 5.0 S (typ.)	Original	2SJ681 transistor J681 2SJ681 J681 j681 transistor tr j681	PDF
J681 Abstract: transistor J681 j681 transistor 2SJ681 Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)	Original	2SJ681 J681 transistor J681 j681 transistor 2SJ681	PDF
transistor J681 Abstract: 2sj681 J681 j681 transistor Text: 2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)	Original	2SJ681 transistor J681 2sj681 J681 j681 transistor	PDF