DMA364A4
Abstract: No abstract text available
Text: DMA364A4 Tentative Total pages page DMA364A4 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : J8 Package Code : SSSMini6-F2-B Internal Connection 6 5 Absolute Maximum Ratings Ta = 25 °C
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DMA364A4
DMA364A4
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transistor j8
Abstract: mobile fm ic J8 marking transistor marking J8
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TV9018NND03 WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
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WBFBP-03B
TV9018NND03
WBFBP-03B
400MHz
transistor j8
mobile fm ic
J8 marking transistor
marking J8
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TV9018NND03 WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
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WBFBP-03B
TV9018NND03
WBFBP-03B
400MHz
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J8 marking transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C S9018M WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
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WBFBP-03B
S9018M
WBFBP-03B
400MHz
J8 marking transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C S9018M WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
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WBFBP-03B
S9018M
WBFBP-03B
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S9018M
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C S9018M WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
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WBFBP-03B
S9018M
WBFBP-03B
S9018M
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smd transistor marking j8
Abstract: SMD TRANSISTOR j8 KST9018 transistor smd marking J8 transistor j8 marking J8 MARKING SMD NPN TRANSISTOR BR
Text: IC Transistors SMD Type NPN Silicon Transistor KST9018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● power dissipation. PC=200mW 1 0.55 ● High current gain bandwidth product. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1
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KST9018
OT-23
200mW)
400MHz
smd transistor marking j8
SMD TRANSISTOR j8
KST9018
transistor smd marking J8
transistor j8
marking J8
MARKING SMD NPN TRANSISTOR BR
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification KST9018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● power dissipation. PC=200mW 1 0.55 ● High current gain bandwidth product. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1
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KST9018
OT-23
200mW)
400MHz
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transistor SOT23 J8
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range
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OT-23
S9018LT1
OT-23
S9018LT1=
400MHz
transistor SOT23 J8
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transistor SOT23 J8
Abstract: transistor j8 S9018LT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage
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OT-23
S9018LT1
OT-23
S9018LT1=
400MHz
transistor SOT23 J8
transistor j8
S9018LT1
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transistor t9018
Abstract: 9018 T9018F
Text: T9018 9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo 30 V Collector-Emitter Voltage
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T9018
1100MHz
100uA
062in
T9018F
300uS
transistor t9018
9018
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transistor SOT23 J8
Abstract: AV9018LT1 transistor j8 S9018LT1 npn sot-23
Text: @vic SOT-23 Plastic-Encapsulate Transistors AV9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range
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OT-23
AV9018LT1
OT-23
400MHz
S9018LT1=
transistor SOT23 J8
AV9018LT1
transistor j8
S9018LT1
npn sot-23
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transistor t9018
Abstract: 9018 T9018 T9018F transistor 9018 NPN
Text: T9018 9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo 30 V Collector-Emitter Voltage
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T9018
1100MHz
100uA
062in
300uS
T9018F
transistor t9018
9018
transistor 9018 NPN
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9018W TRANSISTOR NPN SOT–323 FEATURES Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage
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OT-323
S9018W
400MHz
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2SC3734LT1
Abstract: na 50
Text: 2SC3734LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C
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2SC3734LT1
OT-23
1100MHz
300uS
2SC3734LT1
na 50
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2SC1812
Abstract: No abstract text available
Text: 2SC1812 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C
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2SC1812
OT-23
1100MHz
300uS
2SC1812
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BCX17
Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
Text: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices
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BCX17
BCX18
BCX19
BCX20.
OT-23
BCX18
FMMT-A13
FMMT-A14
BCX18R
marking of m7 diodes
sot 23 marking code T2
sot marking t5
T4 MARKING CODE
I8 SOT23
Diode marking m7
t4 u4
BCX17R
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Untitled
Abstract: No abstract text available
Text: TTamer philips /discrete □ bE D bb53^31 □014T41 T M A IN TEN A N C E TYPE LKE21004R J for new design use LTE21009R MICROW AVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich
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014T41
LKE21004R
LTE21009R)
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RTC146
Abstract: IEC134 LKE21004R LTE21009R
Text: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.
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LTE21009R)
D014141
LKE21004R
FO-53,
IEC134)
RTC146
IEC134
LKE21004R
LTE21009R
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Diodes Marking K7
Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
Diodes Marking K7
Diodes Marking K6
sot23 marking m8
transistors marking 1p
BSS69
marking 1p sot23
Marking b4 SOT23
MARKING l7
MARKING K4
marking H6 sot 23
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Diodes Marking K6
Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
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OT-23
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BSS63
BSS64
Diodes Marking K6
BCX17
Diodes Marking K7
MARKING U1
marking A06
MARKING C4
Marking H2
S4 2A
S5 MARKING
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MCD656
Abstract: LWE2025R
Text: T -3 S -0 5 LWE2025R / V PHILIPS INTERNATIONAL SbE D • 711DflEb DDMbSTb 3Sfl ■ P H I N MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a com m on-emitter, class-A am plifier up to 2.3 GHz in CW conditions in m ilitary and professional applications.
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-T-33-OS
LWE2025R
7110fl2b
FO-93)
MCD656
T-33-05
MCD656
LWE2025R
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FMMT2222A
Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
FMMT2222A
FMMT-A06
BCW33
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NPN marking 8e
Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
NPN marking 8e
FMMT2222A
H9 sot 23
BCW33
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