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    JAN P-CHANNEL MOSFET TRANSISTOR LOW POWER Search Results

    JAN P-CHANNEL MOSFET TRANSISTOR LOW POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    JAN P-CHANNEL MOSFET TRANSISTOR LOW POWER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MOSFET TRANSISTOR SMD MARKING CODE 545

    Abstract: 2N7236 equivalent number of smd transistor of 1448 2N7236 JANTX smd diode code BL p-channel mosfet BL
    Text: 2N7236 Qualified Levels: JAN, JANTX, and JANTXV P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/595 DESCRIPTION This 2N7236 switching transistor is military qualified up to the JANTXV level for high-reliability applications. This device is also available in a low profile U surface mount package.


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    2N7236 MIL-PRF-19500/595 2N7236 O-254AA MIL-PRF-19500/595. T4-LDS-0061, MOSFET TRANSISTOR SMD MARKING CODE 545 equivalent number of smd transistor of 1448 2N7236 JANTX smd diode code BL p-channel mosfet BL PDF

    DD 127 D transistor

    Abstract: 2N6849
    Text: 2N6849 Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849 switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a low profile U surface mount package.


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    2N6849 MIL-PRF-19500/564 2N6849 O-205AF T4-LDS-0009, DD 127 D transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E


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    RD02LUS2 470MHz RD02LUS2 15dBTyp 470MHz 18dBTyp PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 164MHz range. The battery can be connected directly to the drain of the


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    RA33H1516M1 154-164MHz RA33H1516M1 33watt 164MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H4452M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of DMR that operate in the 440- to 520-MHz range.


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    RA60H4452M1A 440-520MHz RA60H4452M1A 60-watt 520-MHz PDF

    Igg22

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H3847M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of DMR that operate in the 378- to 470-MHz range.


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    RA60H3847M1A 378-470MHz RA60H3847M1A 60-watt 470-MHz Igg22 PDF

    RA60H1317M-101

    Abstract: RA60H1317M RA60H1317M1
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


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    RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H1317M-101 RA60H1317M1 PDF

    RA30H4047M

    Abstract: RA30H gp 532 RA30H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


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    RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H gp 532 RA30H4047M-101 PDF

    50ND2

    Abstract: RA45H4047M RA45H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


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    RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz 50ND2 RA45H4047M-101 PDF

    RA45H4452M

    Abstract: RA45H4452M-101 transistor marking zg
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


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    RA45H4452M 440-520MHz RA45H4452M 45-watt 520-MHz RA45H4452M-101 transistor marking zg PDF

    RA13H8891MA-101

    Abstract: RA13H8891MA
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


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    RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz RA13H8891MA-101 PDF

    RA03M8894M

    Abstract: RA03M8894M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to


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    RA03M8894M 889-941MHz RA03M8894M 941-MHz RA03M8894M-101 PDF

    RA07M0608M-101

    Abstract: RA07M0608M Pin-30mW RA07M0608
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to


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    RA07M0608M 66-88MHz RA07M0608M 88-MHz RA07M0608M-101 Pin-30mW RA07M0608 PDF

    RA08N1317M

    Abstract: RA08N1317M-101 RA08N1317
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz


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    RA08N1317M 135-175MHz RA08N1317M 175-MHz RA08N1317M-101 RA08N1317 PDF

    RA07N4452M

    Abstract: RF MOSFET MODULE RA07N4452
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4452M RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to


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    RA07N4452M 440-520MHz RA07N4452M 520-MHz RF MOSFET MODULE RA07N4452 PDF

    RA30H0608M

    Abstract: RA30H0608M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to


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    RA30H0608M 66-88MHz RA30H0608M 30-watt 88-MHz RA30H0608M-101 PDF

    mosfet marking 12W

    Abstract: RA07H0608M RA07H0608M-101 transistor marking code 12W 30mW transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H0608M RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 68- to 88-MHz


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    RA07H0608M 68-88MHz RA07H0608M 88-MHz mosfet marking 12W RA07H0608M-101 transistor marking code 12W 30mW transistor PDF

    RA07N4047M-101

    Abstract: RA07N4047M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047M RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to


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    RA07N4047M 400-470MHz RA07N4047M 470-MHz RA07N4047M-101 PDF

    MOSFET Module

    Abstract: RA30H2127M RA30H2127M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H2127M RoHS Compliance , 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H2127M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 210- to


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    RA30H2127M 210-270MHz RA30H2127M 30-watt 270-MHz MOSFET Module RA30H2127M-101 PDF

    RA07M3843

    Abstract: RA07M3843M RA07M3843M-101 4 channel rf module
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3843M RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3843M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 378- to


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    RA07M3843M 378-430MHz RA07M3843M 430-MHz RA07M3843 RA07M3843M-101 4 channel rf module PDF

    RA13H4452M

    Abstract: RA13H4452M-101 transistor 60 13w
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


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    RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-101 transistor 60 13w PDF

    RF MOSFET MODULE

    Abstract: RA30H1721M RA30H1721M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1721M RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1721M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 175- to


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    RA30H1721M 175-215MHz RA30H1721M 30-watt 215-MHz RF MOSFET MODULE RA30H1721M-101 PDF

    transistor marking code H11S

    Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


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    RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz transistor marking code H11S MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101 PDF

    RA07H4047M

    Abstract: RA07H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4047M RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 400- to 470-MHz


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    RA07H4047M 400-470MHz RA07H4047M 470-MHz RA07H4047M-101 PDF