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    JDV2S Price and Stock

    Toshiba America Electronic Components JDV2S10FS(TPL3)

    DIODE VARICAP VCO 10V FSC
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    DigiKey JDV2S10FS(TPL3) Cut Tape 398 1
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    • 10 $0.265
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    JDV2S10FS(TPL3) Digi-Reel 398 1
    • 1 $0.43
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    JDV2S10FS(TPL3) Reel 10,000
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    Bristol Electronics JDV2S10FS(TPL3) 9,180
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    Quest Components JDV2S10FS(TPL3) 7,344
    • 1 $0.557
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    Toshiba America Electronic Components JDV2S09FSTPL3

    DIODE VARICAP VCO 10V FSC
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    DigiKey JDV2S09FSTPL3 Cut Tape 1
    • 1 $0.42
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    JDV2S09FSTPL3 Reel 10,000
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    JDV2S09FSTPL3 Digi-Reel 1
    • 1 $0.42
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    Toshiba America Electronic Components JDV2S07FSTPL3

    DIODE VARICAP VCO 10V FSC
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    DigiKey JDV2S07FSTPL3 Cut Tape 1
    • 1 $0.4
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    JDV2S07FSTPL3 Digi-Reel 1
    • 1 $0.4
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    JDV2S07FSTPL3 Reel 10,000
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    Toshiba America Electronic Components JDV2S41FS(TPL3)

    DIODE VAR 15V UHF FSC
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    DigiKey JDV2S41FS(TPL3) Reel
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    Mouser Electronics JDV2S41FS(TPL3) 3,727
    • 1 $0.88
    • 10 $0.77
    • 100 $0.533
    • 1000 $0.379
    • 10000 $0.293
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    Toshiba America Electronic Components JDV2S41AFS,L3M

    Variable Capacitance Diode - Tape and Reel (Alt: JDV2S41AFS,L3M)
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    Avnet Americas JDV2S41AFS,L3M Reel 10,000
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    EBV Elektronik JDV2S41AFS,L3M 21 Weeks 10,000
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    JDV2S Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    JDV2S01E Toshiba Original PDF
    JDV2S01E-07 Toshiba Silicon Epitaxial Planar Type VCO for UHF band Original PDF
    JDV2S01ETH3T Toshiba JDV2S01ETH3T - Diode VAR Cap Single 10V 2.85pF 2-Pin ESC T/R Original PDF
    JDV2S01ETPH3 Toshiba DIODE VAR CAP SINGLE 10V 1.35PF 2(1-1G1A) Original PDF
    JDV2S01ETPH3F Toshiba JDV2S01ETPH3F - Diode VAR Cap Single 10V 2.85pF 2-Pin ESC T/R Original PDF
    JDV2S01FS Toshiba DIODE VAR CAP SINGLE 10V 1.35PF 2(1-1L1A) Original PDF
    JDV2S01S Toshiba Original PDF
    JDV2S02E Toshiba Original PDF
    JDV2S02ETH3FT Toshiba JDV2S02ETH3FT - Diode VAR Cap Single 10V 1.8pF 2-Pin ESC T/R Original PDF
    JDV2S02ETPH3 Toshiba DIODE VAR CAP SINGLE 10V 0.83PF 2(1-1G1A) Original PDF
    JDV2S02E(TPH3,F) Toshiba JDV2S02E - Diode VAR Cap Single 10V 1.8pF 2-Pin ESC T/R Original PDF
    JDV2S02FS Toshiba VCO for the UHF band Original PDF
    JDV2S02S Toshiba Original PDF
    JDV2S05E Toshiba Original PDF
    JDV2S05E(TH3,F,T) Toshiba JDV2S05E - Diode VAR Cap Single 10V 3.85pF 2-Pin ESC T/R Original PDF
    JDV2S05ETPH3 Toshiba DIODE VAR CAP SINGLE 10V 1.94PF 2(1-1G1A) Original PDF
    JDV2S05FS Toshiba DIODE VAR CAP SINGLE 10V 1.94PF 2(1-1L1A) Original PDF
    JDV2S05S Toshiba Original PDF
    JDV2S05S Toshiba Variable Capacitance Diodes; Surface Mount Type: Y; Package: sESC; Number of Pins: 2; Application Scope: VHF/UHF VCO Original PDF
    JDV2S06FS Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1L1A) Original PDF

    JDV2S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JDV2S36E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S36E TCXO/VCO Unit: mm • High capacitance ratio: C1V / C6V = 7.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original
    JDV2S36E PDF

    JDV2S05S

    Abstract: No abstract text available
    Text: 20010205 JDV2S05S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 1V ~ 4 V


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    JDV2S05S 187E-16 00E-04 750E-12 00E-10 PDF

    JDV2S13S

    Abstract: No abstract text available
    Text: 20010205 JDV2S13S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ~ 4 V


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    JDV2S13S 2E-16 00E-04 1E-11 00E-10 PDF

    JDV2S40FS

    Abstract: C10V
    Text: JDV2S40FS TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S40FS VCO for UHF Band Radio Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 15 V Junction temperature Tj 150 °C Tstg −55 to 150


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    JDV2S40FS JDV2S40FS C10V PDF

    JDV2S38SC

    Abstract: No abstract text available
    Text: JDV2S38SC TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S38SC VCO for UHF Band Radio Low Series Resistance : rs = 0.48 Ω typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products


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    JDV2S38SC JDV2S38SC PDF

    JDV2S05E

    Abstract: No abstract text available
    Text: 20010126 JDV2S05E SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 1V ~ 4 V


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    JDV2S05E 187E-16 00E-04 750E-12 00E-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 20010205 JDV2S03S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 1V ~ 4V Ta = 27℃


    Original
    JDV2S03S 352E-15 00E-04 0E-11 00E-10 PDF

    JDV2S36E

    Abstract: No abstract text available
    Text: JDV2S36E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S36E TCXO/VCO Unit: mm • High capacitance ratio: C1V / C6V = 7.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    JDV2S36E JDV2S36E PDF

    marking FB

    Abstract: JDV2S02E
    Text: JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.60 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


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    JDV2S02E 000707EAA1 marking FB JDV2S02E PDF

    JDV2S05E

    Abstract: No abstract text available
    Text: JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 1.9 typ. • Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


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    JDV2S05E 000707EAA1 JDV2S05E PDF

    JDV2S09S

    Abstract: No abstract text available
    Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


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    JDV2S09S 000707EAA2 JDV2S09S PDF

    JDV2S02S

    Abstract: No abstract text available
    Text: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original
    JDV2S02S 000707EAA2 JDV2S02S PDF

    JDV2S17S

    Abstract: No abstract text available
    Text: JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio • Unit: mm High Capacitance Ratio : C1V/C4V = 2.1 typ. • Low Series Resistance : rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original
    JDV2S17S JDV2S17S PDF

    JDV2S06S

    Abstract: No abstract text available
    Text: JDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.27 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original
    JDV2S06S 000707EAA2 JDV2S06S PDF

    JDV2S14E

    Abstract: No abstract text available
    Text: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO • Small Package • High Capacitance Ratio : C1V/C2.5V = 2.15 typ. • Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original
    JDV2S14E 000707EAA1 JDV2S14E PDF

    JDV2S31SC

    Abstract: No abstract text available
    Text: JDV2S31SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S31SC VCO for UHF Band Radio Low series resistance : rs = 0.23 Ω typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. Lead (Pb)-free. 0.62±0.03


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    JDV2S31SC 470MHz JDV2S31SC PDF

    JDV2S01FS

    Abstract: No abstract text available
    Text: JDV2S01FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01FS VCO for the UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.5 Ω (typ.) • This device is suitable for use in a small-size tuner. 0.6±0.05


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    JDV2S01FS JDV2S01FS PDF

    JDV2S19S

    Abstract: No abstract text available
    Text: JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band Unit: mm • High capacitance ratio: C1V/C4V = 1.8 typ. • Low series resistance: rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner. Absolute Maximum Ratings (Ta = 25°C)


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    JDV2S19S JDV2S19S PDF

    C25V

    Abstract: JDV2S71E
    Text: JDV2S71E 東芝ダイオード シリコンエピタキシャルプレーナ形 JDV2S71E ○ UHF SHF 電子同調用 単位: mm • 容量変化比が大きい。 : C1V/C25V = 11.5 標準 • 直列抵抗が小さい。 • C-V カーブの直線性が良くトラッキングエラーが少ない。


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    JDV2S71E C1V/C25V 470MHz C25V JDV2S71E PDF

    Untitled

    Abstract: No abstract text available
    Text: JDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.27 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original
    JDV2S06S 000707EAA2 PDF

    Untitled

    Abstract: No abstract text available
    Text: JDV2S28SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S28SC VCO for UHF Band Radio Unit: mm High Capacitance Ratio : C1V/C3V = 2.17 typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. • Lead (Pb)-free.


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    JDV2S28SC 470MHz PDF

    JDV2S16FS

    Abstract: No abstract text available
    Text: JDV2S16FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S16FS VCO for the UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.55 Ω (typ.) • This device is suitable for use in a small-size tuner. 0.6±0.05


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    JDV2S16FS JDV2S16FS PDF

    JDV2S10FS

    Abstract: No abstract text available
    Text: JDV2S10FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10FS VCO for the UHF band Unit: mm This device is suitable for use in a small-size tuner. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 10 V Junction temperature


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    JDV2S10FS JDV2S10FS PDF

    JDV2S25FS

    Abstract: No abstract text available
    Text: JDV2S25FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S25FS VCO for UHF Band Radio Unit: mm High capacitance ratio: C1V/C4V = 2.9 typ. • Low series resistance: rs = 0.49 Ω (typ.) • This device is suitable for use in small tuners. 0.6±0.05 0.1


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    JDV2S25FS JDV2S25FS PDF