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    JDV2S02S Search Results

    JDV2S02S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    JDV2S02S Toshiba Original PDF

    JDV2S02S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JDV2S02S

    Abstract: No abstract text available
    Text: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


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    JDV2S02S 000707EAA2 JDV2S02S PDF

    JDV2S02S

    Abstract: No abstract text available
    Text: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 2.0 typ. · Low series resistance: rs = 0.6 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


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    JDV2S02S JDV2S02S PDF

    JDV2S02S

    Abstract: No abstract text available
    Text: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original
    JDV2S02S 000707EAA2 JDV2S02S PDF

    Untitled

    Abstract: No abstract text available
    Text: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


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    JDV2S02S PDF

    JDV2S02S

    Abstract: No abstract text available
    Text: 20010205 JDV2S02S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 1V ~ 4 V


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    JDV2S02S 236E-16 00E-04 334E-12 00E-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 2.0 typ. · Low series resistance: rs = 0.6 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


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    JDV2S02S PDF

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


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    050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 PDF

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


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    050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 PDF

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B PDF

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


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    3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 PDF

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original
    3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR PDF

    FET K161

    Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
    Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


    Original
    050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 PDF

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original
    3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 PDF