JDV2S09S Search Results

JDV2S09S Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
JDV2S09S		Toshiba	Variable Capacitance Diodes; Surface Mount Type: Y; Package: sESC; Number of Pins: 2; Application Scope: VHF/UHF VCO		Original	PDF
JDV2S09S		Toshiba			Original	PDF

JDV2S09S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
JDV2S09S Abstract: No abstract text available Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S09S 000707EAA2 JDV2S09S	PDF
JDV2S09S Abstract: No abstract text available Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 2.1 typ. · Low series resistance: rs = 0.33 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S09S JDV2S09S	PDF
JDV2S09S Abstract: No abstract text available Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Absolute Maximum Ratings (Ta = 25°C)	Original	JDV2S09S JDV2S09S	PDF
JDV2S09S Abstract: No abstract text available Text: 20010319 JDV2S09S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V	Original	JDV2S09S 824E-16 00E-04 636E-11 00E-10	PDF
JDV2S09S Abstract: No abstract text available Text: JDV2S09S 東芝ダイオードシリコンエピタキシャルプレーナ形 JDV2S09S ○ UHF 帯無線 VCO 用単位: mm • 容量比が大きい。 • 直列抵抗が小さい。 : rs = 0.33 Ω 標準 • 2 端子超小型外囲器なので､VCO の小型化に適しています。	Original	JDV2S09S JDV2S09S	PDF
Untitled Abstract: No abstract text available Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S09S	PDF
Untitled Abstract: No abstract text available Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 2.1 typ. · Low series resistance: rs = 0.33 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S09S	PDF
Untitled Abstract: No abstract text available Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)	Original	JDV2S09S 000707EAA2	PDF
JDV2S09S Abstract: No abstract text available Text: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Absolute Maximum Ratings (Ta = 25°C)	Original	JDV2S09S JDV2S09S	PDF
sec 2sc5088 Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and	Original	BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS	PDF
TOSHIBA RF Power Module S-AV24 Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 Text: 高周波用半導体デバイスダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192	PDF
3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112	PDF
2fu smd transistor Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B	PDF
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114	PDF

marking code V6 33 surface mount diode Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379 Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3	Original	ADE-508-010A ADE-508-016 ADE-508-017 HVL355B HVL358B HVL368B HVL375B HVL385B marking code V6 33 surface mount diode philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379	PDF
FET K161 Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 Text: 高周波用半導体デバイストランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923	PDF
2sc5088 horizontal transistors Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509	PDF