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    JDV2S10S Search Results

    JDV2S10S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    JDV2S10S Toshiba Variable Capacitance Diodes; Surface Mount Type: Y; Package: sESC; Number of Pins: 2; Application Scope: VHF/UHF VCO Original PDF
    JDV2S10S Toshiba Original PDF

    JDV2S10S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JDV2S10S

    Abstract: No abstract text available
    Text: JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio • High Capacitance Ratio : C0.5V/C2.5V = 2.5 typ. • Low Series Resistance : rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original     		JDV2S10S 000707EAA2 JDV2S10S PDF

    JDV2S10S

    Abstract: No abstract text available
    Text: 20010205 JDV2S10S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V


    Original     		JDV2S10S 0E-16 00E-04 2E-11 00E-10 PDF

    JDV2S10S

    Abstract: No abstract text available
    Text: JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio • Unit: mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 typ. • Low Series Resistance : rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner.


    Original     		JDV2S10S JDV2S10S PDF

    Untitled

    Abstract: No abstract text available
    Text: JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio Unit: mm • High Capacitance Ratio : C0.5V/C2.5V = 2.5 typ. · Low Series Resistance : rs = 0.35 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original     		JDV2S10S PDF

    Untitled

    Abstract: No abstract text available
    Text: JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio • Unit: mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 typ. • Low Series Resistance : rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner.


    Original     		JDV2S10S PDF

    Untitled

    Abstract: No abstract text available
    Text: JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio Unit: mm • High Capacitance Ratio : C0.5V/C2.5V = 2.5 typ. • Low Series Resistance : rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner.


    Original     		JDV2S10S 0011ments, PDF

    Untitled

    Abstract: No abstract text available
    Text: JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio • High Capacitance Ratio : C0.5V/C2.5V = 2.5 typ. • Low Series Resistance : rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original     		JDV2S10S 000707EAA2 PDF

    JDV2S10S

    Abstract: No abstract text available
    Text: JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio Unit: mm • High Capacitance Ratio : C0.5V/C2.5V = 2.5 typ. · Low Series Resistance : rs = 0.35 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)


    Original     		JDV2S10S JDV2S10S PDF

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS PDF

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 PDF

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 PDF

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 PDF

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR PDF

    marking code V6 33 surface mount diode

    Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
    Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3


    Original     		ADE-508-010A ADE-508-016 ADE-508-017 HVL355B HVL358B HVL368B HVL375B HVL385B marking code V6 33 surface mount diode philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379 PDF

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 PDF