JEC1SS
Abstract: No abstract text available
Text: SiC - photodiode JEC 1S/JEC 1SS characteristics : ♦ ♦ ♦ ♦ spectral range active area high UV-responsivity TO 18-package applications : ♦ ♦ ♦ UV-measurement only UV-source control flame detection 210 . 380 0,965 0,13 nm mm2 A/W maximum ratings:
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18-package
JEC1SS
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Untitled
Abstract: No abstract text available
Text: SiC - photodiode JEC 0,3S/JEC 0,3SS characteristics : ♦ ♦ ♦ ♦ spectral range active area high UV-responsivity TO 18-package applications : ♦ ♦ ♦ UV-measurement only UV-source control flame detection 210 . 380 0,22 0,13 nm mm2 A/W maximum ratings:
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18-package
04/0e
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JEC 0.1 S
Abstract: JEC 200 jec01s opa 275
Text: SiC - photodiode JEC 0,1S/JEC 0,1SS characteristics : ♦ ♦ ♦ ♦ applications : ♦ UV-measurement only ♦ UV-source control ♦ flame detection spectral range active area high UV-responsivity TO 18-package 210 . 380 0,055 0,13 nm mm2 A/W maximum ratings:
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18-package
JEC 0.1 S
JEC 200
jec01s
opa 275
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JEC 0.1 S
Abstract: JEC ELECTRONICS uv light PHOTO detector JEC 400 JEC 0.1 SO uv PHOTO detector UV photodiodes UV diode 280 nm solar photodiodes UV flame detection
Text: JEC Series SiC Ultraviolet Photodiodes SiC Ultraviolet Photodiodes Boston Electronics’s Silicon Carbide SiC photodetectors are photovoltaic devices similar to silicon solar cells, and need no external power supply (bias) to operate. Only light shorter than a wavelength of ~400 nm is absorbed and produces photocurrent.
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uv photodiode for 254nm
Abstract: JEC ELECTRONICS UV diode 250 nm uv photodiode JEC 400 UV source 250 nm
Text: JEC 0.1 SHT SiC Photodiode CHARACTERISTICS Spectral range 210 to 380 nm Activity area 0.055 mm2 High UV-responsivity 0.13 A/W TO-18 package Suitable for operating temperatures up to 150°C APPLICATIONS UV measurement only UV source control Flame detection
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JEC 200
Abstract: opa 275
Text: SiC - photodiode JEC 0,3SHT characteristics : ♦ ♦ ♦ ♦ ♦ spectral range 210 . 380 nm active arrea 0,22 mm2 high UV-responsivity 0,13 A/W TO 18-package suitable for operating temperatures up to 150 °C applications : ♦ ♦ ♦ UV-measurements only
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18-package
range-25
JEC 200
opa 275
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jec amplifier
Abstract: Solar sun sensor cossh
Text: SiC – Photodiode JEC 1 I-DE ERYCS characteristics : ♦ ♦ ♦ ♦ ♦ applications : SiC-photodiode with integrated special filter ideal for solar application full hermetic TO-5 package integrated diffusor for cos-shaped response characteristic sensor assembly isolated to ground
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photodiode flame
Abstract: No abstract text available
Text: SiC - photodiode JEC 1 IS characteristics : ♦ ♦ ♦ ♦ ♦ spectral range 210 . 380 active area 0,965 high UV-responsivity 0,16 TO 18-package photodiode isolated to package applications : ♦ ♦ ♦ UV-measurements only UV-source control flame detection
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18-package
photodiode flame
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uv flame sensor
Abstract: No abstract text available
Text: SiC - photodiode JEC 0,3 IS characteristics : ♦ ♦ ♦ ♦ ♦ spectral range active area high UV - responsivity TO 18-package sensor isolated to package applications : ♦ ♦ ♦ UV-measurement only control of sterilization lamps flame detection 210 . 380
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18-package
uv flame sensor
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opa 275
Abstract: opa 220 JEC0.1
Text: SiC - Photodiode JEC 0,3* characteristics : ♦ ♦ ♦ ♦ SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 0,22 mm2 TO 5-package applications : ♦ ♦ ♦ ♦ UV-measurement only control of sterilization lamps
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jec01s
Abstract: No abstract text available
Text: SiC - photodiode JEC 0,1SHT characteristics : ♦ ♦ ♦ ♦ ♦ spectral range 210 . 380 nm active area 0,055 mm2 high UV-responsivity 0,13 A/W TO 18-package suitable for operating temperatures up to 150 °C applications : ♦ ♦ ♦ UV-measurements only
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18-package
range-25
jec01s
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MA 4E 1245
Abstract: No abstract text available
Text: SiC - photodiode JEC 4 characteristics : i i i i spectral range active area high UV - response TO 39-package applications : i i i UV-measurement only UV-source control for instance in sterilizers flamedetection 210 . 380 nm 4 mm2 150 mA/W maximum ratings:
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39-package
MA 4E 1245
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opa 275
Abstract: JEC 200 JEC1C JEC 400 JEC1B 1bc2
Text: SiC - Photodiode JEC 1* characteristics : ♦ ♦ ♦ ♦ SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 1 mm2 TO 5-package applications : ♦ ♦ ♦ ♦ UV-measurement only control of sterilization lamps
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opa 275
Abstract: photodiode flame JEC 400 340nm
Text: SiC - Photodiode JEC 0,1* characteristics : i i i i SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 0,055 mm2 TO 5-package applications : i i i i UV-measurement only control of sterilization lamps flame detection
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43pt601
Abstract: 202F 500R 43PT040 SPECTROL 43p Spectrol 0/SPECTROL 43p
Text: Model 43 A 3/4” 19mm Rectangular Multiturn Cermet Trimmer Optional features include: panel mount, clear lid alternative adjuster heights. The model 43 is manufactured to the highest international standards, approved to CECC 41101-801. This product, sealed to 85°C for 1 min. (JEC.68-2-17)
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uv photodiode for 254nm
Abstract: photodiode flame JEC ELECTRONICS JEC 400 Boston Electronics Corporation
Text: JEC 1 SHT SiC Photodiode CHARACTERISTICS Spectral range 210 to 380 nm Activity area 0.965 mm2 High UV-responsivity 0.16 A/W TO-18 package Suitable for operating temperatures up to 150°C APPLICATIONS UV measurement only UV source control for instance in sterilizers
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intersil prism
Abstract: tms 980 processor HFA386X
Text: ISL3856 TM Data Sheet P RE L I M I N A RY Wireless LAN Access Point Controller The Intersil ISL3856 Wireless LAN Access Point Controller is part of Intersil’s Wireless LAN chip sets targeting Access Point applications. tle 38 jec el ess t tro ho w rsi or
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ISL3856
ISL3856
ARM940
HFA386x
intersil prism
tms 980 processor
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AN9863
Abstract: ICL3225E ICL3227E ICL3245E IEC1000 MAX3225E MAX3227E MAX3245E
Text: ICL3225E, ICL3227E, ICL3245E TM Data Sheet tle 32 , 32 , 32 jec k SD ect to V, cro , ps sc rs anc om er n) tho ±15kV ESD Protected, +3V to +5.5V, 1Microamp, 1Mbps, RS-232 Transceivers with Enhanced Automatic Powerdown The Intersil ICL32XXE devices are 3.0V to 5.5V powered
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ICL3225E,
ICL3227E,
ICL3245E
RS-232
ICL32XXE
ElA/TIA-232
AN9863
ICL3225E
ICL3227E
ICL3245E
IEC1000
MAX3225E
MAX3227E
MAX3245E
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t03j
Abstract: JEC 400 SOLITRON 1.5A COMMON CATHODE anode common fast recovery diode 15A 200V
Text: C A T A L O G _ JTallt mil ^ SOLITRON DEVICES PROPUOT INC HfiE D • ULTRA FAST RECOVERY RECTIFIERS 400V, 3 0 A , 50ns SDR30400 SDR30400 SDR30400 SDR30400 JEA JEB JEC JED FEATURES RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS
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3bfib02
T-03-J^
SDR30400
MIL-STD-883
VRWM-200V
300us.
t03j
JEC 400
SOLITRON
1.5A COMMON CATHODE
anode common fast recovery diode 15A 200V
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Untitled
Abstract: No abstract text available
Text: PRODUCT CATALO' Æ lltro n ULTRA FAST RECOVERY RECTIFIERS 400V, 3 0 A , 50ns SDR30400 SDR30400 SDR30400 SDR30400 JEA JEB JEC JED FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS
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SDR30400
MIL-STD-883
0004D10
VRWM-200V
300rS,
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Untitled
Abstract: No abstract text available
Text: PRODUCT CÁTALO' Æntran ULTRA FAST RECOVERY RECTIFIERS 400V, 3 0A , 50ns SDR30400 SDR30400 SDR30400 SDR30400 JEA JEB JEC JED FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCT ION• CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • L O W IR LOSSES
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SDR30400
MIL-STD-883
IFM-15A
VRWM-200V
300MS,
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Untitled
Abstract: No abstract text available
Text: PRODUCT C A T A L O G _ . ^ S l i t r o i l ogy,^ ,nc \K7 :{%f N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0.2 1Q 5DF360 SDF360 SDF360 5DF360 PARAMETER JEA JEB JEC JED • RUGGED PACKAGE •H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS
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5DF360
SDF360
5DF360
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7805L
Abstract: FTO-xx
Text: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT JEC juPD42S17805L, 4217805L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /iPD42S17805L, 4217805L are 2 097 152 words by 8 bits CMOS dynam ic RAMs w ith optional hyper page
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uPD42S17805L
uPD4217805L
/iPD42S17805L,
4217805L
28-pin
fiPD42S17805L-A70,
4217805L-A70
7805L
FTO-xx
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JEC 400
Abstract: N-Channel mosfet 400v 25A SDF360 1D-14a DIODE ED 99
Text: PRODUCT CÂTÂL ^ » l i t r o n DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0 .2 1 Q SDF360 SDF360 SDF360 SDF360 JEA JEB JEC JED FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS
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SDF360
SDF360
300nS.
JEC 400
N-Channel mosfet 400v 25A
1D-14a
DIODE ED 99
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