NONLINEAR MODEL LDMOS
Abstract: No abstract text available
Text: Slide 1 Extracting RF Mosfet Spice Models MTT 1998 - Baltimore Md. by S. K. Leong Polyfet Rf Devices www.polyfet.com This presentation is available on our web site Slide 2 Why simulate? n n n n n n n Simulation - It’s the only way! Fast accurate results. What if analysis.
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transistor bc 5588
Abstract: No abstract text available
Text: LT1122 Fast Settling, JFET Input Operational Amplifier FEATURES DESCRIPTION 100% Tested Settling Time 340ns Typ to 1mV at Sum Node, 10V Step 540ns Max Tested with Fixed Feedback Capacitor n Slew Rate 60V/µs Min n Gain-Bandwidth Product 14MHz n Power Bandwidth 20V
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LT1122
340ns
540ns
14MHz
600pA
150pA
10VP-P
LT1022
LT1055/LT1056
LT1464
transistor bc 5588
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VTL5C10
Abstract: No abstract text available
Text: LT1122 Fast Settling, JFET Input Operational Amplifier FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO U ■ 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor Slew Rate Gain Bandwidth Product Power Bandwidth 20Vp-p
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LT1122
20Vp-p)
340ns
540ns
LT1122
14MHz
600pA
150pA
430pF
VTL5C10
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Vactec VTL5C10
Abstract: VTL5C10 LT1122 Vactec jfet matching fixture LT1122CS8 VTL5C1 LT1122AMJ8 LT1122CCJ8 CLM410
Text: LT1122 Fast Settling, JFET Input Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor Slew Rate Gain Bandwidth Product Power Bandwidth 20Vp-p
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LT1122
20Vp-p)
340ns
540ns
LT1122
14MHz
600pA
150pA
430pF
Vactec VTL5C10
VTL5C10
Vactec
jfet matching fixture
LT1122CS8
VTL5C1
LT1122AMJ8
LT1122CCJ8
CLM410
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Anaren Microwave
Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. [email protected] Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been
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apt449a
Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
Text: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications
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APT9701.
ARF448A/B,
APT9702.
ARF449A/B
APT9801.
apt449a
APT9701
APT9702
hf class AB power amplifier mosfet
uhf 200w mosfet
mosfet HF amplifier
APT9801
200W PUSH-PULL
what is the drawback of operating system
HF Amplifier 200w
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Untitled
Abstract: No abstract text available
Text: K Series with PFC Data Sheet 150 – 280 Watt AC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available. • Class I equipment • • • • Power factor >0.93, harmonics IEC/EN 61000-3-2 Immunity according to IEC/EN 61000-4-2, -3, -4, -5, -6
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BCD20001-G
16-Dec-2010
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LK5660-7R
Abstract: L3032 LK2000
Text: K Series with PFC Data Sheet 150 – 280 Watt AC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available. • Class I equipment • • • • Power factor >0.93, harmonics IEC/EN 61000-3-2 Immunity according to IEC/EN 61000-4-2, -3, -4, -5, -6
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BCD20001-G
16-Dec-2010
LK5660-7R
L3032
LK2000
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tunable notch filter
Abstract: d0755 sine wave Oscillator jfet circuit ad549 sockets
Text: 36 V, 19 MHz, Low Noise, Low Bias Current, JFET Operational Amplifier ADA4627-1 PIN CONFIGURATIONS Low offset voltage: 200 V maximum Offset drift: 1 μV/°C typical Very low input bias current: 5 pA maximum Extended temperature range: −40ºC to +125ºC
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ADA4627-1
ADA4627-1
D07559-0-7/09
tunable notch filter
d0755
sine wave Oscillator jfet circuit
ad549 sockets
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ada4627
Abstract: ADA4627-1 Ask The Applications Engineer-25 AD8620 ADA4 AD8510 AD8512 AD8610 AD8615 AD8616
Text: 36 V, 19 MHz, Low Noise, Low Bias Current, JFET Operational Amplifier ADA4627-1 PIN CONFIGURATIONS Low offset voltage: 200 V maximum Offset drift: 1 μV/°C typical Very low input bias current: 5 pA maximum Extended temperature range: −40°C to +125°C
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ADA4627-1
ADA4627-1BRZ1
ADA4627-1BRZ-R71
ADA4627-1BRZ-RL1
D07559-0-10/09
ada4627
ADA4627-1
Ask The Applications Engineer-25
AD8620
ADA4
AD8510
AD8512
AD8610
AD8615
AD8616
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SBOS197E
Abstract: No abstract text available
Text: OPA657 OPA 657 www.ti.com SBOS197E – DECEMBER 2001 – REVISED DECEMBER 2008 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input
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OPA657
SBOS197E
275MHz
OPA657
SBOS197E
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OPA355
Abstract: OPA627 OPA655 OPA656 OPA657 OPA657U THS4601 OPA657 transimpedance amplifier
Text: OPA657 OPA 657 www.ti.com SBOS197E – DECEMBER 2001 – REVISED DECEMBER 2008 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input
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OPA657
SBOS197E
OPA657
275MHz
OPA355
OPA627
OPA655
OPA656
OPA657U
THS4601
OPA657 transimpedance amplifier
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Untitled
Abstract: No abstract text available
Text: OPA657 OPA 657 www.ti.com SBOS197E – DECEMBER 2001 – REVISED DECEMBER 2008 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input
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OPA657
SBOS197E
275MHz
OPA657
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OPA657 transimpedance amplifier
Abstract: No abstract text available
Text: OPA657 OPA 657 SBOS197D – DECEMBER 2001 – REVISED MARCH 2006 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input
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OPA657
SBOS197D
275MHz
OPA657
OPA657 transimpedance amplifier
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ad654 spice
Abstract: DARLINGTON TRANSISTOR ARRAY AD75019
Text: ANALOG DEVICES INC 51E D • OfllbflQQ 0 0 3 7 3 T M b42 ■ ANA - H7.-e>\ i r ■ MIXED SIGNAL M U M ' >Jlil\Ul' J.;! r l □ Q ANALOG DEVICES * ANALOG DEVICES INC 51E D ■ OfllbBOD 0 0 3 7 3 ^ 5 Table of Contents 1 Summary 2 ASIC Processes 5 LC2MOS Cell Library
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TL052
Abstract: op tl082 Instrumentation Amplifier circuit with tl082 TL052C
Text: TL052, TL052A ENHANCED JFET PRECISION DUAL OPERATIONAL AMPLIFIERS D3235, JUNE 1988- REVISED FEBRUARY 1991 • Maximum Offset Voltage . . . 800 |iV TL052A • High Slew Rate . . . 17.8 V/jis Typ at 25°C • Low Total Harmonic Distortion . . . 0.003% Typ at R|_ = 2 kfl
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TL052,
TL052A
D3235,
TL052A)
LT1004,
LT1009,
LM385.
LM385,
LT1009
TL052
op tl082
Instrumentation Amplifier circuit with tl082
TL052C
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Instrumentation Amplifier IC with tl084
Abstract: u1d diode ic TL074 APPLICATION NOTES
Text: TL054, TL054A ENHANCED JFET PRECISION QUAD OPERATIONAL AM PLIFIERS D3236, JUNE 1988 - REVISED JANUARY 1991 D, J, o r N PACKAGE Maximum Offset Voltage . . . 1.5 mV TL054A (TOP VIEW) High Slew Rate . . . 15.9 V/fts Typ at 25°C 1 OUT [ 1 U 14 2 4 OUT 13 3 4 IN 1 IN - C 2
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TL054,
TL054A
D3236,
TL054A)
L054A
TL054A,
1N914.
Instrumentation Amplifier IC with tl084
u1d diode
ic TL074 APPLICATION NOTES
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Untitled
Abstract: No abstract text available
Text: u _ LT1122 m TECHNOLOGY F€ATUR€S Fast Settling, JFET Input O p e ra tio n a l A m plifier D CSCRIPTIOn • 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor ■ Slew Rate ■ Gain Bandwidth Product
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LT1122
20Vp-p)
340ns
540ns
14MHz
600pA
150pA
LT1122
10Vp-p
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MARKING 2AM
Abstract: No abstract text available
Text: □m TECHNOLOGY nppucnnons • Fast 12-Bit D/A Output Amplifiers ■ High Speed Buffers ■ Fast Sample and Hold Amplifiers ■ High Speed Integrators ■ Voltage to Frequency Converters ■ Active Filters ■ Log Amplifiers ■ Peak Detectors Fast Settling, JFET Input
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LT1122
LT1122
340ns.
14MHz
12-bit
10Vp-p
MARKING 2AM
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Untitled
Abstract: No abstract text available
Text: _ LT1122 e r u n t A ß TECHNOLOGY F€ATUR€S • 100% Tested Settling Time to 1 mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor ■ Slew Rate ■ Gain Bandwidth Product ■ Power Bandwidth 20Vp-p ■ Unity Gain Stable; Phase Margin
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LT1122
20Vp-p)
340ns
LT1122
540ns
14MHz
10Vp-p
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LT1122ACN8
Abstract: No abstract text available
Text: rruncAB TECHNOLOGY F€ ATU R €S • 100% Tested Settling Time to 1 mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor ■ Slew Rate ■ Gain Bandwidth Product ■ Power Bandwidth 20Vp-p ■ Unity Gain Stable; Phase Margin ■ Input Offset Voltage
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20Vp-p)
340ns
540ns
14MHz
600pA
150pA
LT1122
LT1122
10Vp-p
LT1122ACN8
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LF400
Abstract: No abstract text available
Text: High-Speed, Fast-Settling Precision Operational Amplifier OP-42 ANALOG DEVICES □ F EA TU R ES Fast • Slew • Settllng-Tlme 0.01% . 1(isMax
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OP-42
10MHzTyp
OP-42
900kHz,
800ns
MUX-08
OP-41
OP-41.
OP-42â
LF400
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jfet matching fixture
Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT NMOS MODEL PARAMETERS SPICE RF Power Transistor spice AN002 ZERO Bias diode "RF MOSFETs" NMOS depletion pspice model depletion MOSFET SPICE AN001
Text: A tiIxK APPLICATION NOTE #AN001 REV 07/15/91 MICROW AVE POW ER TRANSISTOR IMPEDANCE MEASUREMENT M m /a - c o m p h i , in c . Introduction Calibration The required input and output impedances for M /A-COM PHI microwave power transistors are specified as Z if and Z of respectively. Z if is the test
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AN001
jfet matching fixture
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
NMOS MODEL PARAMETERS SPICE
RF Power Transistor spice
AN002
ZERO Bias diode
"RF MOSFETs"
NMOS depletion pspice model
depletion MOSFET SPICE
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Untitled
Abstract: No abstract text available
Text: JUL 1 * * _ r r u i m TECHNOLOGY F€flTUR€S • 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor ■ Slew Rate ■ Gain Bandwidth Product ■ Power Bandwidth 20Vp-p ■ Unity Gain Stable; Phase Margin
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LT1122
340ns
LT1122
540ns
14MHz
20Vp-p)
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