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    JFET PHILIPS Search Results

    JFET PHILIPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DG191AP/B Rochester Electronics LLC DG191 - Dual SPDT, High-Speed Drivers with JFET Switch Visit Rochester Electronics LLC Buy
    DG182AP/B Rochester Electronics DG182 - Dual SPST, High-Speed Drivers with JFET Switch Visit Rochester Electronics Buy
    10091790-002LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #2-56 x 0.375" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091791-003LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.625" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091790-003LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #2-56 x 0.5" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions

    JFET PHILIPS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LF398

    Abstract: LF198 LF198FE LF298FE LF298N LF398D LF398FE LF398N
    Text: Philips Semiconductors Linear Products Product specification Sample-and-hold amplifiers LF198/LF298/LF398 DESCRIPTION PIN CONFIGURATIONS The LF198/LF298/LF398 are monolithic sample-and-hold circuits which utilize high-voltage ion-implant JFET technology to obtain


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    LF198/LF298/LF398 LF198/LF298/LF398 LF198 1000pF LF398 LF198FE LF298FE LF298N LF398D LF398FE LF398N PDF

    n-channel jfet amplitude control

    Abstract: philips jfet complementary JFET design ideas 2n5484 jfet P-Channel Depletion Mode Field Effect Transistor small signal amplifier JFET Ideas for Design P-Channel JFET jfet philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Ideas for design Small-signal Field-effect Transistors Product specification Supersedes data of 1995 Apr 28 File under Discrete Semiconductors, SC07 1997 Oct 28 Philips Semiconductors Product specification Small-signal Field-effect Transistors


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    2N5484 MGC457 MGC455 n-channel jfet amplitude control philips jfet complementary JFET design ideas 2n5484 jfet P-Channel Depletion Mode Field Effect Transistor small signal amplifier JFET Ideas for Design P-Channel JFET jfet philips PDF

    N-Channel JFET FETs

    Abstract: analog switch circuit using mosfet 2N5484 characteristics complementary JFET complementary mosfet jfet RDSon
    Text: IDEAS FOR DESIGN page JFET constant-current sources 50 JFET source followers and amplifiers 51 JFET voltage controlled resistors 52 MOS-FET analog switches 53 Philips Semiconductors Small-signal Field-effect Transistors Ideas for design JFET CONSTANT-CURRENT SOURCES


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    2N5484 N-Channel JFET FETs analog switch circuit using mosfet 2N5484 characteristics complementary JFET complementary mosfet jfet RDSon PDF

    LF398

    Abstract: LF198 LF398FE
    Text: Philips Semiconductors Linear Products Product specification Sample-and-hold amplifiers LF198/LF298/LF398 DESCRIPTION PIN CONFIGURATIONS_ The LF198/LF298/LF398 are monolithic sample-and-hold circuits which utilize high-voltage ion-implant JFET technology to obtain


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    LF198/LF298/LF398 LF198/LF298/LF398 LF198 100pF 1000pF 10Vp-p OE-00 711002t. LF398 LF398FE PDF

    lf398

    Abstract: lf398n 8pin LF198 capacitor 1pF LF398 application LF398FE
    Text: Product specification Philips Sem iconductors-Signetics Linear Products Sample-and-hold amplifiers LF198/LF298/LF398 PIN CONFIGURATIONS DESCRIPTION FEATURES The LF198/LF298/LF398 are monoiithic sample-and-hold circuits which utilize high-voltage ion-implant JFET technology to


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    LF198/LF298/LF398 LF198/LF298/LF398 LF198 100pF 1000pF 10Vp-p lf398 lf398n 8pin capacitor 1pF LF398 application LF398FE PDF

    lf398

    Abstract: LF198 LF198FE LF298FE LF398D LF398FE LF398N ANI 8-pin lf398n 8pin LF298N
    Text: P hilips Sem iconductors Linear Products Product specification Sample-and-hold amplifiers LF198/LF298/LF398 DESCRIPTION PIN CONFIGURATIONS_ The LF198/LF298/LF398 are monolithic sample-and-hold circuits which utilize high-voltage ion-implant JFET technology to obtain


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    LF198/LF298/LF398 LF198 10Vp-p 711002b 0D7ci214 lf398 LF198FE LF298FE LF398D LF398FE LF398N ANI 8-pin lf398n 8pin LF298N PDF

    LF398

    Abstract: lf398n 8pin LF198 lf39 lf198f
    Text: P roduct specification P hilips Sem iconductors Linear Products Sample-and-hold amplifiers LF198/LF298/LF398 DESCRIPTION PIN CONFIGURATIONS The LF198/LF298/LF398 are monolithic sample-and-hold circuits which utilize high-voltage ion-implant JFET technology to obtain


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    LF198/LF298/LF398 LF198/LF298/LF398 LF198 100pF 1000pF LF398 lf398n 8pin lf39 lf198f PDF

    ECG859

    Abstract: ECG857M ECG858m S-250-C
    Text: i PHILIPS E C G INC 17E ^53=120 0G0S02b S D ECG857M, ECG858M, ECG859 S e m ic o n d u c to rs Lo-Noise JFET Input OP Am p ECG857M - Single ECG858M - Dual ECG859 • Quad ECG857M , ECG858M Features • Low noise: V|\j = 18 n V \/H z typ • Low harm onic distortion: 0.01% typ


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    bb53T2fl 0G0S02b ECG857M, ECG858M, ECG859 ECG857M ECG858M ECG859 ECG85X S-250-C PDF

    ECG778

    Abstract: ECG1774 ECG1777 ECG1409C ECG888M ECG889M ECG1771 ECG1845 ECG778S ECG887M
    Text: PHILIPS E C ù INC 3H t B tbSB'iSä DQQh771 T IECG 1C and Module Circuits E C G 778S 8-Pin SIP See Fig. L35 Dual Internally Compensated High Performance Operational Amplifier, V c c = ± 1 5 V Typ T ^77~2J EC G 887M 8-Pin DIP See Fig. L98 Lo Power JFET Input Op Amp


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    bb5312Ã DDb771 ECG778S ECG887M ecg887m ecg888m ECG889M ECG998 ecg1776 ECG778 ECG1774 ECG1777 ECG1409C ECG1771 ECG1845 PDF

    ECG859

    Abstract: ECG857M ECG858M Quadrature Oscillator
    Text: P H IL I P S E C G INC 17E ECG Sem iconductors • bbSBTEfl 0G0S02b S ECG857M, ECG858M, ECG859 Lo-Noise JFET Input OP Amp ECG857M - Single ECG858M - Dual ECG859 • Quad ECG857M, ECG858M Features • Low noise: V |\j= 18 n V \/H z typ • Low harmonic distortion: 0.01% typ


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    0G0S02b ECG857M ECG858M ECG859 ECG85X ECG857M, ECG858M, 100-kHz ECG859 Quadrature Oscillator PDF

    E 212 fet

    Abstract: 2N3820 philips jfet Junction P FET "P-Channel JFET" j-fet transistor P-Channel JFET 2N3820 ti
    Text: PHILIPS MIE INTERNATIONAL Data sheet status Preliminary specification date o f issue October 1990 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It is intended for use in general purpose amplifiers. D EH 711002b


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    711002b 12fci337 2N3820 MBB161 711002b DG2b33fl 2N3820 7110fiSb 002b340 E 212 fet philips jfet Junction P FET "P-Channel JFET" j-fet transistor P-Channel JFET 2N3820 ti PDF

    2N3819

    Abstract: transistor 2N3819 philips jfet 2N3819 data 2n3819 transistor "N-Channel JFET" JFET 2N3819 Philips International 00Sb3
    Text: 41E D PHILIPS INTERNATIONAL 711062b 00Sb333 □ M P H I N T-3 ^ 2 5 - S h itin e fîn m n n n A n t« ! D ata sheet status Preliminary specification d ate of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package.


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    2N3819 7110S2b 00Sb333 T-3S-25' MBB081 711Dfl2b 002b334 711002b 002b33b 2N3819 transistor 2N3819 philips jfet 2N3819 data 2n3819 transistor "N-Channel JFET" JFET 2N3819 Philips International 00Sb3 PDF

    2N3819

    Abstract: transistor 2N3819 2n3819 transistor J-FET 2N3819
    Text: MIE D PHILIPS INTERNATIONAL D ata sheet status Preliminary specification d a te of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package. • 711002b G02b333 0 ■ PHIN 2N3819 T-3S-2S N-channel J-FET PINNING - TO-92


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    711002b G02b333 2N3819 MBB081 G02b334 T-35-25 711i0fiBb 005b33b 2N3819 transistor 2N3819 2n3819 transistor J-FET 2N3819 PDF

    2N3820

    Abstract: No abstract text available
    Text: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET


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    2N3820 MBB181 003SA4b S3T31 Q03Sfl4fl 2N3820 PDF

    transistor 2N3819

    Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION


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    2N3819 J-FET-2N3819 transistor 2N3819 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819 PDF

    PHC21025

    Abstract: No abstract text available
    Text: Philips Semiconductors Ideas for design Small-signal Field-effect Transistors POWER/BATTERY SWITCHING USING VD-MOS-FETS A Power switch can be used to disconnect a load during a period of non use. The load may be anything from a light bulb, an electronic valve, a stepper or brush motor to


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    PDF

    transistor 2N3819

    Abstract: 2N3819 2n3819 transistor fet junction transistor "N-Channel JFET" 2N3819 fet J-FET J-FET TRANSISTOR philips jfet MBB081
    Text: PHILIPS 41E » I NTERNATIONAL 711062b 00Sb333 T -3 ^2 5 - S h it in e fîn m n n n A n t « ! D ata sheet status Preliminary specification d ate of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package. □ MPHIN


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    2N3819 7110S2b 00Sb333 T-3S-25' MBB081 D02b334 711002b 002b33b transistor 2N3819 2N3819 2n3819 transistor fet junction transistor "N-Channel JFET" 2N3819 fet J-FET J-FET TRANSISTOR philips jfet MBB081 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a t io n d a te o f is s u e O c t o b e r 1990 2N3819 N-channel J-FET PINNING - TO-92 FE A T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1


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    2N3819 bb53T31 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D ata sheet s tatu s Preliminary specification d a te o f Issue October 1990 FEATURES 2N4340 N-channel J-FET PINNING - TO-18 • Low noise, noise figure < 1 dB • High off isolation. PIN 1 2 3 PIN CONFIGURATION DESCRIPTION source drain


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    2N4340 BB162 0D35flbb 0D35flbfi 7Z68763 PDF

    2N3820

    Abstract: P-Channel JFET 2n3820 transistor
    Text: PHI L IP S 41E D INTERNATIONAL Philips Components D ata sheet status Preliminary specification d ate of Issue October 1990 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope, it is intended for use in general purpose amplifiers.


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    711002b 2b337 2N3820 Q02b33ô 711005t 002b340 2N3820 P-Channel JFET 2n3820 transistor PDF

    transistor 2N4340

    Abstract: 2N4340 philips jfet
    Text: Philips Com ponents D a ta s h e e t s ta tu s Pre lim inary sp e cific a tio n d a te o f Iss u e O c to b e r 1990 2N4340 N-channel J-FET PINNING - TO-18 FEATURES • Low noise, n o ise figure < 1 d B • High off isolation. PIN 1 2 3 PIN CONFIGURATION DESCRIPTION


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    2N4340 7Z68763 3TO-18. transistor 2N4340 2N4340 philips jfet PDF

    transistor 2N3819

    Abstract: 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet
    Text: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N3819 N-channel J-FET PINNING - TO-92 FEA T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1 2 3 DESCRIPTION drain gate source DESCRIPTIO N


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    2N3819 UBB081 D035fl44 J-FET-2N3819 transistor 2N3819 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet PDF

    P-Channel JFET

    Abstract: philips 2N4393 2N5116 2N4393 DDS4111 philips jfet
    Text: I 1^53^31 DDS4111 S3Ö « A P X Philips Semiconductors Data sheet status Preliminary specification date of issue July 1993 FEATURES • P-channel com plem ent of 2N4393 • S hort sam ple and hold aperture tim e. 2N5116 NAI1ER philips/]>iscre:te: P-channel J-FET


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    DDS4111 2N5116 2N4393 MBB163 P-Channel JFET philips 2N4393 2N5116 2N4393 philips jfet PDF

    fet junction n-channel transistor

    Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
    Text: 711002b DDbôO?! ÔT7 • P H IN Philips Semiconductors D ata sh e e t s ta tu s Prelim inary specification d a te of is s u e O ctob e r 1990 FEATURES • Low noise, noise figure < 1 dB • High o ff isolation. 2N4340 N-channel J-FET PINNING - TO-18 PIN 1


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    711Dfi2b 2N4340 711Dfl2b fet junction n-channel transistor small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340 PDF