MRF321
Abstract: ferroxcube 56-590-65
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
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MRF321
400MHz
1N4001
56-590-65/4B)
VK200-19/4B
MRF321
ferroxcube 56-590-65
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redcap
Abstract: No abstract text available
Text: t U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF329 . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range.
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MRF329
1000pFUNELCOFeedthru
VK200-19/4B
redcap
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MRF323
Abstract: ferroxcube 56-590-65
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF323 Product Image Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range.
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MRF323
56-590-65/4B)
VK200-19/4B
MRF323
ferroxcube 56-590-65
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ERIE CAPACITORS
Abstract: SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658/D*
ERIE CAPACITORS
SAHA Mica capacitors
MRF658
erie capacitor
SAHA
trimmer 3-30 pf
nippon capacitors
GRH710
MURATA ERIE CAPACITOR
MOTOROLA 381 equivalent
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658/D*
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MRF658
Abstract: SAHA Mica capacitors ERIE CAPACITORS nippon capacitors MURATA ERIE CAPACITOR GX-0600-55-22 MOTOROLA 381 equivalent CAPACITOR MURATA 420 NPN Silicon RF Transistor murata erie
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658
MRF658/D*
MRF658/D
SAHA Mica capacitors
ERIE CAPACITORS
nippon capacitors
MURATA ERIE CAPACITOR
GX-0600-55-22
MOTOROLA 381 equivalent
CAPACITOR MURATA
420 NPN Silicon RF Transistor
murata erie
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transistor MRF321
Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Text: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321/D
MRF321
transistor MRF321
JMC5201
redcap
erie redcap capacitors
vk200 coil
erie redcap
vk200
1N4001
MRF321
case 244-04
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j687
Abstract: MRF323 VK200 case 244-04
Text: Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323/D
MRF323
j687
MRF323
VK200
case 244-04
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MRF325
Abstract: MRF-325
Text: MOTOROLA Order this document by MRF325/D SEMICONDUCTOR TECHNICAL DATA MRF325 . . . designed primarily for wideband large–signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts
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MRF325/D
MRF325
MRF325
MRF325/D*
MRF325/D
MRF-325
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erie redcap capacitors
Abstract: MRF325 Diode Motorola 316 VK200 MRF-325 transistor HFE 400 1w
Text: MOTOROLA Order this document by MRF325/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF325 . . . designed primarily for wideband large–signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF325/D
MRF325
MRF325/D*
erie redcap capacitors
MRF325
Diode Motorola 316
VK200
MRF-325
transistor HFE 400 1w
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Untitled
Abstract: No abstract text available
Text: ASSEMBLY DM 'IT LED COLOR NUMB DM T DM XT U M NT. M UM VHHAX1 M HMAXJ M JLpeai TEST. nm) COMI UMAX] • 5V|iA> 550-0205 GREEN DIFFUSED .135 .020 .043 3 .5 2. 8 560 20mA 100 550-0305 YELLOW DIFFUSED .135 .020 .043 3 .5 2. 8 58 5 20mA 100 2. 8 550-0405 RED DIFFUSED
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Johanson 2320
Abstract: 565-9065 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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56-590-65/4B)
VK200-19/4B
80-mii-Thick
MRF325
Johanson 2320
565-9065
FERROXCUBE VK200
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VK200 ferrite choke
Abstract: jmc 5201
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —
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VK200-19/4B
MRF329
VK200 ferrite choke
jmc 5201
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vk200 coil
Abstract: FERROXCUBE VK200 jmc 5201
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts
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MRF321
vk200 coil
FERROXCUBE VK200
jmc 5201
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VK200 FERRITE
Abstract: MRF329
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF329 The RF Line NPN Silicon RF Power TVansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF329
56-590-65/4B)
VK200-19/4B
MRF329
VK200 FERRITE
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MRF329
Abstract: LX280 vk200 2,5 MRF329 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed prim arily for wideband larg e-sig nal output and driver am plifier stages in the 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz C haracteristics —
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MRF329
LX280
vk200 2,5
MRF329 equivalent
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56-590-65
Abstract: MRF325 jmc 5201 565-9065
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts
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MRF325
56-590-65
jmc 5201
565-9065
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jmc 5201
Abstract: 5659065 565-9065 jmc 5501 56-590-65 VK200-19
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —
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MRF325
jmc 5201
5659065
565-9065
jmc 5501
56-590-65
VK200-19
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ferroxcube 56-590-65
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323
MRF323
ferroxcube 56-590-65
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jmc 5201
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MRF321
jmc 5201
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vk200 coil
Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
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MRF321
vk200 coil
jmc 5201
ferroxcube 56-590-65
VK200-19
FERROXCUBE VK200
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transistor c 2316
Abstract: No abstract text available
Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR
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MRF323
MRF323
transistor c 2316
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D73 transistor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321
MRF321
b3b72S5
D73 transistor
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VK200-19/4B
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed prim arily lo r wideband large-signal output and driver am plifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF325
VK200-19/4B
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