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    JS 2617 Search Results

    JS 2617 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    68682-617LF Amphenol Communications Solutions Dubox® 2.54mm, Board to Board Connector, PCB Mounted Receptacle, Vertical, Through Hole, Dual Entry, Double Row, 34 Position ,2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    54122-409261750LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded stacking vertical header, through hole, double Row, 26 position, 2.54mm (0.100in) pitch Visit Amphenol Communications Solutions
    54242-409261750LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Surface Mount, Double Row, 26 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    54112-109261700LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 26 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    54122-809261750RLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded stacking vertical header, through hole, double Row, 26 position, 2.54mm (0.100in) pitch Visit Amphenol Communications Solutions
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    JS 2617 Price and Stock

    Square D by Schneider Electric JJS26175

    Molded Case Circuit Breaker 600V 175A | Square D JJS26175
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS JJS26175 Bulk 5 Weeks 1
    • 1 $6274.23
    • 10 $6274.23
    • 100 $6274.23
    • 1000 $6274.23
    • 10000 $6274.23
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    JS 2617 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet SDW82F1C – Chip on Board Enable High Flux and Cost Efficient System Z Power Chip on board – ZC series SDW82F1C CRI80 LM-80 RoHS MacAdam 3-Step Product Brief Description Features and Benefits • The ZC series are LED arrays which provide


    Original
    PDF SDW82F1C CRI80) LM-80

    SP10T

    Abstract: PE7160
    Text: .1470 THRU 4 HDLES .2 5 0 .31 0 1.5000 .3 1 0 COM POS 1 SCHEMATIC SHOWN WITH ALL PORTS OPEN POS 2 POS 3 POS 4 POS 5 POS 6 POS 7 POS 8 POS 9 LJ U S U S U r‘ S POS 10 L JS 10 SPECIFICATIONS SWITCH TYPE: SP10T CONNECTOR TYPE: SMA FREQUENCY RANGE: DC TO 8 GHz


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    PDF SP10T 94ENT PE7160 PE7160

    ic SE 135

    Abstract: 00jT K49H
    Text: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •


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    PDF PWS10 CycleS50 ic SE 135 00jT K49H

    cd 1619 CP fm radio

    Abstract: RBS 2206 UAA 1006 cd 1619 CP fm radio RECEIVER NVR 1550 UAA 1004 DP utc 2411 RBS 2302 RBS 2204 ECU 206 7.4.5
    Text: MOTOROLA Order th is document as AN495/D SEMICONDUCTOR APPLICATION NOTE AN495/D RDS decoding for an HC11 -controlled radio P. Topping, Motorola Ltd, East Kilbride, Scotland Introduction This application note describes, and lists the software of, the RDS aspects of the HC11 radio controller described


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    PDF AN495/D HC11-controlled AN494/D. MC68HC 16-character AN495/D cd 1619 CP fm radio RBS 2206 UAA 1006 cd 1619 CP fm radio RECEIVER NVR 1550 UAA 1004 DP utc 2411 RBS 2302 RBS 2204 ECU 206 7.4.5

    OHMITE 4854

    Abstract: ohmite 0454 ES150 OHMITE 0114A 1156d Ohmite 90J5RO 91j250 F409 S1K0 ohmite 1803
    Text: OHM ITE Cross Reference Manufacturing Company Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. 0101 0102 0102A 0103 0103A 0104 0105 0106 0107 0108 0109 0110 0111 0112 0113 0113A 0114 0114A 0115


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    PDF 0200B 0200C 0200D 0200E 0200F 0200G 0200H 0200J 0200K 0200L OHMITE 4854 ohmite 0454 ES150 OHMITE 0114A 1156d Ohmite 90J5RO 91j250 F409 S1K0 ohmite 1803

    2SA1652

    Abstract: TC-7931
    Text: y 1; : i > / n° * 7 — S ilico n Pow er T ra n sistor P N P i t 0^ ^ y 7 ; ^ y U =i > I lffl mm 2SA1652«, Ü i t ; W ' y 5 L> '? 'f f l? '= lU ? £ - li- y ^ P a ] fiJW m B E ^ C / Jv ê < 4 « J : ? I B « 3 n Æ :E-;u K /'C '7 - ^ ÎÉ 4.7 MAX. 10.5 MAX.


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    PDF 2SA1652 2SA1652Â IEI-620) TC-7931 3I53S 2SA1652 TC-7931

    2SK2133

    Abstract: 2SK2133-Z MP-25 MP-25Z CMT-10
    Text: zr— 'i? NEC ^ • £ /— h M O S ^ -^ 5 e j!j^ /\0r7 - M O S FET M O S Field E ffect P o w e r T ran sistors 2SK2133, 2SK2133-Z N ^ Ÿ T W U /x V -M O S f e t i t f f l 2SK 2133, 2 S K 2 1 3 3 -Z l i N i t :Ê . 7 , < i 7 - MOS FET T 't T * ' U ¡Ü IS


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    PDF 2SK2133, 2SK2133-Z 2SK2133-Z 2SK2133 IEI-620) MP-25 O-220AB) MP-25Z 2SK2133 MP-25 MP-25Z CMT-10

    TC7988

    Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
    Text: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y


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    PDF 2SK2158 2SK2158Ià 73pDpà IEI-620) 1-N00 TC7988 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q

    OX36D-S-MR-R

    Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
    Text: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing


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    PDF 12000-square-meter IS09000-2000, Min15 MXF3200 MXF3200A 12WCMXF3200) 6WCMXF3200A) OX36D-S-MR-R dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117

    j329

    Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
    Text: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo


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    D17012GF

    Abstract: 78MEC D17012GF-011 D17012G ltaft et 4-1-fm bfy40 d17012 tlu 011 uPD6121G
    Text: i r — • ts— h Ü 5 È M O S Â « @ £ & N E M O S Integrateci Circuit C j F M , M P L L J l ) W Æ u , L W S è v P 1 D f n - t > i r 7 (¥ # c ) - 9 - < 1 2 G F - 1 1 m h P “ 7 >u P D 1 7 0 1 2 G F -0 1 1 {â ^ :tâ :^ lÆ iiO P L L jl> ra '> > iz -y -< 1 f^ ïfc F M ) MW, L W if


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    PDF //PD17012GF-011 200MHz7Â TFM18j^ D17012GF 78MEC D17012GF-011 D17012G ltaft et 4-1-fm bfy40 d17012 tlu 011 uPD6121G

    transistor C 2615

    Abstract: bu526 js 2617 BF56 marking EAAT transistor 526
    Text: L I _-— - ^ 17E D TELEFUNKEN ELECTRONIC • Ô ^ O O R b DQ0tm'7S 4 . THIUIIFTOKIMI electronic BU 526 Crtalrv« Tèchnotogtç* r-3 3 -1 3 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In tripple diffusion technique


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    PDF

    2SD1005

    Abstract: b10 lek 2SB804 2SD100
    Text: Silicon T ra n s is to r 2SD1005 f t W-MWÌ $ W i : mm 0 7 |-— t V o 2SB804 i 3 > 7° IJ y > ^ 'J Titm T" l ^ t . o ë ‘x > i f t i Î Œ, iHjhF'E ”(?~'f~0 PT = 2.0 W (0.7 mmX 16 cm2- t e 7 Ì VCEo > 80 V, hFE = 200 TYP. (Ic = 100 mA) »& -9 - ^ î _ x pBH Œ


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    PDF 2SD1005 2SB804 OT-89) PWS10 cycleS50 2SD1005 b10 lek 2SD100

    2SD1000

    Abstract: IC HE 4011 2SB799 2SD100 TEB-528 2SD1000 TC-5494A WFs transistor
    Text: ?— S • Ss— H Silicon T ra n s is to r 2SD1000 o - t — r 'A * T > m m m i •mm - 7 °m < T ) K 7 4 2 S B 7 9 9 ¿ 3 yy°') ? 'jr f È f f l e '# ti~0 O/J'A^’C P t ^ '^ ^ ^ > ¡ftiiŒ T 'i) < 5o 1.5+0.1 p m = 2 .0 m w ± 0 .7 mmX Il 3 U 7 y W 3


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    PDF 2SD1000 2SB799 OT-89) PWS10 cycleS50 2SD1000 IC HE 4011 2SD100 TEB-528 2SD1000 TC-5494A WFs transistor

    uPA609T

    Abstract: MPA609T AAHC IC-8847 PA609T transistor a935 lm 7914 1S955 cb-40 nec I-7520
    Text: ï r — •£? • — h NEC V U = 1 > Silicon Transistor iuPA609T N P N / P N P X =*■ v MPA609T « DC/DC =1> /S'- £ V =1 > h 7 > '/ X ^ H im ? ft -5/* 9 - MOS W iS . : mm FET W -if— S 7)7'U K 7 < ^ Ì C f t ì S 4 ' S :?-:& = l> 7 ,' i; ^ > * U - ? 2 * i r tl*


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    PDF uPA609T MPA609T IEl-620) MPA609T AAHC IC-8847 PA609T transistor a935 lm 7914 1S955 cb-40 nec I-7520

    2SJ328

    Abstract: 2SJ328-Z J0502
    Text: NEC M O S ^ l # ^ l / \ “7 - M O S F E T M O S Field Effect P ow e r Transistors 2SJ328,2SJ328-Z P ^ q U U /N ^ - M x 2 S J 3 2 8 1 ÎP 5 1 + J U W -M O S FETT * O S F E T i f f i m tt : m m ) > S S * ' i''{6 < X -f •> Y 7 ? - E lï# ^ D C - D C = l> /S - ^ iC Â T !- r o £ £ ,


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    PDF 2SJ328 2SJ328-Z 2SJ328ttP? bT2SJ3291f IEI-620) 2SJ328 2SJ328-Z J0502

    IC-8857

    Abstract: fbise t460 transistor bth 200 63445-5 UPA674T
    Text: : r — — h '> > ; □ > h 7 > v x ^ PA674T Silicon Transistor N P N / P N P X fc f£ ^ V U ^ > h 7 / / P A 6 7 4 T « S jI^ - f 7 f > ^ h 7 > v X ^ ^ > y U * > 2 U ? 2 Ü IŸ F « U > V X ^ m O .: mm - Ï - m ìg iÈ D fà ± t > j:t fm m 3 x S ^ lM t c » ® u S - r o


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    PDF uPA674T IEI-620) ETS14 IC-8857 fbise t460 transistor bth 200 63445-5

    2sk1150

    Abstract: b 772 my1 PS7K 2SK 1411 t8506
    Text: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .


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    PDF 2SK1150 50tti 2sk1150 b 772 my1 PS7K 2SK 1411 t8506

    Philips PCF 7900

    Abstract: BI 170-1-2 PD72256 fdk vco 004 tfk 522 IC HEF 4541 PCF 7900 himax hx DXJR dk737
    Text: M o s jfc ü m ïê MOS Integrateci Circuit M FM , M W P ,L W D f ^ 1 - t { M 7 W 1 2 G F - 5 1 m P L L J l i 6 i è v > i r 1 t ' f I f • £> < ££> ':□ > h P - 7 / iP D 1 7 0 1 2 G F - 0 5 1 Ì^ tì# ^ W P L L |Ì]> ^ '> > - b - y - < 1 f^ F M MW, L W ^ zl


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    PDF OAM77 Philips PCF 7900 BI 170-1-2 PD72256 fdk vco 004 tfk 522 IC HEF 4541 PCF 7900 himax hx DXJR dk737

    molex mxj 2g

    Abstract: No abstract text available
    Text: Z £ -rX M Z £ 0 D I 0-N3 's h 25.7 25.2 24.7 24.2 23.7 23.2 22.7 22.2 21.7 21.2 20.7 20.2 19.7 19.2 18.7 18.2 17.7 17.2 16.7 16.2 15.7 15.2 14.7 14.2 13.7 13.2 12.7 12.2 11.7 11.2 10.7 10.2 9.7 9.2 8.7 D 0.5(N- I)}" NAIL BOTTOM 0.5(N+ I)" VIEW 0.5(N+ I)


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    PDF SD-52559-* J40605) CJ4056B) rfJ402671 U3II69) mBf655iii MXJ-32 molex mxj 2g

    e5es

    Abstract: IEGT nec 05d 51ti BA 9706 K cxt2 HP 1003 WA NEC CPUii POB1 IC CMOS7
    Text: r M OS Integrated Circuit /¿PD17P402 * t i t ^ m 4 fcf'y N • •v - f ? □ = ] > h P - 7 /¿PD17P402 i, /¿PD17402£>P^VX?ROM £, 7 > • £ < A P R O M T 'B £ & tL* I«K i T T o fi P D17P402 « , 7 P 7 A 0 W # Jt £ / jP D 1 7 P 4 0 2 C 7 3 ^ ^ t4 (fc jg fc S ftftif) l i ,


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    PDF uPD17P402 PD17402£ D17P402 D17402 16K/W 8192X16 PD17P402GC-3B9 U10427JJ1VQDS00 PP17P402 e5es IEGT nec 05d 51ti BA 9706 K cxt2 HP 1003 WA NEC CPUii POB1 IC CMOS7

    js 2617

    Abstract: mxj 5 connector
    Text: Z £ -rX M Z £ 0 D I 0-N3 's h 2 5. 7 24.9 20.65 19.5 2 5. 2 2 4. 4 20. 15 19.0 2 4. 7 23.9 19.65 18.5 2 4. 2 2 3. 4 19.15 18.0 2 3. 7 22.9 18.65 17.5 2 3. 2 2 2. 4 18.15 17.0 - 3517 35 21.9 17.65 16.5 - 3 4 17 34 2 2. 7 0. 5(N- I)}" NAIL BOTTOM 0. 5( N+ I)"


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    PDF J5034 J40781) J40605) J4056B) J40267) J3II69) MXJ-32 js 2617 mxj 5 connector

    NEC C959

    Abstract: 7KIP C959 2SD1701 PA33 T092 Nec b 616 n471 TN59
    Text: '> > ; = ] > Y = ÿ > i> 7 .^ S ilic o n T r a n s is to r 2SD1701 41 m i t 800 m A Î t ' W f l h F E f ^ ^ & « s ìè t t o y — ± : mm 5.2 MAX. h Y 7 4 7" 'J > F > f ê W o Î É V CE (s a t)T "to i ( t a = 25 ° c) a »& s -f- S Ÿ§- -¥• \ÎL


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    PDF 2SD1701 SC-43B OttOt07- NEC C959 7KIP C959 2SD1701 PA33 T092 Nec b 616 n471 TN59

    SK FN 521

    Abstract: 2SA1897 T-100 paps7k V/SK FN 521
    Text: 5ë'fr%-R H u ttifa fp 0|D July 1993 M 1 "sj O *vj m *□ V; w> -* ít Si' ü 1 V >4 v> di V' ü A Si % Vf m 111 V m lin üsf 8$ St * fr H (Q .H •n ~ü H H m Vf Vi- m Püf V. m üf Vi o" Ttr D 1 5o o H s: o" o o H o 11 ro Ül H °Il en H o II IIA N) ^ en


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    PDF 2SA1897 2SAI897itmrniitH IEI-620) SK FN 521 2SA1897 T-100 paps7k V/SK FN 521