D431016LE
Abstract: HART3 d431016 IC-3243 MARKING TP NEC 431016LE-1
Text: MOS INTEGRATED CIRCUIT juPD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description T h e /JPD431016 is a h ig h speed, lo w p o w e r, 1 048 576 b its 65 536 w o rd s by 16 b its C M O S s ta tic R A M . T h e /iP D 431016 are packed in 4 4 -pin p la s tic SOJ.
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OCR Scan
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uPD431016
64K-WORD
16-BIT
/JPD431016
041t8
b427525
00b43G3
PD431016
431016LE
00b4304
D431016LE
HART3
d431016
IC-3243
MARKING TP NEC
431016LE-1
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ÎPD431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The JUPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V + 0.3 V.
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OCR Scan
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uPD431016L
16-BIT
JUPD431016L
44-pin
uPD431016LLE-A17
uPD431016LLE-A20
PD431016L
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PDF
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NEC 41-A 002
Abstract: No abstract text available
Text: JUPD431016 65,536 X 16-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /JPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem
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OCR Scan
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JUPD431016
16-Bit
/JPD431016
536-word
16-bit
44-Pin
/L/PD431016
NEC 41-A 002
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿ P D 431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT D e s c rip tio n The /iP D 431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits C M OS static RAM. O perating supply voltage is 3.3 V ± 0.3 V.
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OCR Scan
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16-BIT
431016L
44-pin
//PD431016LLE-A17
iPD45
L42752S
008tooo2
G0L4327
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 4 3 1 0 1 6 L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The /iPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM, Operating supply voltage is 3.3 V ± 0.3 V.
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OCR Scan
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16-BIT
uPD431016L
/iPD431016L
44-pin
PD4310161-
jUPD431016L
iiPD431016LLE:
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PDF
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Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ¿¿PD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT D e s c rip tio n The ¿iPD431016 is a high speed, lo w power, 1 048 576 bits 65 536 w ords by 16 bits CMOS static RAM. The /jPD431016 are packed in 44-pin plastic SOJ. F e a tu re
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OCR Scan
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uPD431016
64K-WORD
16-BIT
iPD431016
44-pin
091t8ool
/XPD431016
PD431016.
/PD431016LE:
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PDF
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NEC B 536
Abstract: VQH200
Text: NEC fiPD431016 65,536 x 16-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /iPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem ory cells. It is suitable for cache memory and buffer
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OCR Scan
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uPD431016
536-word
16-bit
/JPD431016
44-pin
fiPD431016
HPD431016
pPD431016
NEC B 536
VQH200
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PDF
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NEC B 536
Abstract: 431016LLE
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The /iPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
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OCR Scan
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431016L
64K-WORD
16-BIT
uPD431016L
/iPD431016L
44-pin
431016LLE-Al7
/JPD431016LLE-A20
091-oooi
NEC B 536
431016LLE
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC M O S INTEGRATED CIRCUIT /¿PD431016 1M-BIT C M O S FAST STATIC RAM 64K-WORD BY 16-BIT D escription The ¿ PD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits CMOS static RAM. The ¿¿PD431016 are packed in 44-pin plastic SOJ.
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OCR Scan
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PD431016
64K-WORD
16-BIT
PD431016
44-pin
005T347
b427525
PP431016
//PD431016.
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.
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OCR Scan
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PD431016L
64K-WORD
16-BIT
//PD431016L
/iPD431016L
44-pin
431016LLE-A
PD431016LLE-A20
/iPD431016L.
/PD431016LLE:
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PDF
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d431016
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /xPD 431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT D e s c rip tio n T h e /j P D 431016 is a high sp eed , low pow er, 1 048 576 bits 65 536 w o rd s by 16 b its C M O S static R A M . T h e ¿/PD431016 are packed in 44-pin p lastic S O J .
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OCR Scan
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64K-WORD
16-BIT
uPD431016
44-pin
091tg
iPD431016.
d431016
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PDF
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