P2803NVG
Abstract: SEM 2005 niko-sem p2803nvg NIKO-SEM P2803 "Field Effect Transistor" Field Effect Transistor p2803n DSA0025594 P-CHANNEL
Text: NIKO-SEM P2803NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 27.5mΩ 7A P-Channel -30 34mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
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P2803NVG
JUL-25-2005
P2803NVG
SEM 2005
niko-sem
p2803nvg NIKO-SEM
P2803
"Field Effect Transistor"
Field Effect Transistor
p2803n
DSA0025594
P-CHANNEL
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ELM34402AA
Abstract: P2003b p2003bvg
Text: 单 N 沟道 MOSFET ELM34402AA-N •概要 ■特点 ELM34402AA-N 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=8A ·Rds on < 20mΩ (Vgs=10V) ·Rds(on) < 32mΩ (Vgs=4.5V) ■绝对最大额定值 项目
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ELM34402AA-N
P2003BVG
JUL-25-2005
ELM34402AA
P2003b
p2003bvg
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Untitled
Abstract: No abstract text available
Text: User’s Guide NHD-3.5-320240YF-ATXL# LCM Liquid Crystal Display Module For product support, contact Newhaven Display International 2511 Technology Drive, #101 Elgin, Illinois 60123 Tel: (847) 844-8795 Fax: (847) 844-8796 February 11, 2009 Newhaven Display
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5-320240YF-ATXL#
HT035-01
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TG6F
Abstract: SPK Electronics W523S08 W523S10 W523S12 W523S15 W523S20 W523S40 W523S50 W523S60
Text: W523SXX HIGH FIDELITY PRELIMINARY PowerSpeech TM GENERAL DESCRIPTION The W523Sxx family are programmable speech synthesis ICs that utilize Winbond′s new high fidelity voice synthesis algorithm to generate all types of voice effects with high sound quality.
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W523SXX
W523Sxx
W523Sxx'
W523S08
W523S10
W523S12
W523S15
W523S20
W523S25
TG6F
SPK Electronics
W523S08
W523S10
W523S12
W523S15
W523S20
W523S40
W523S50
W523S60
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM34402AA-N •General description ■Features ELM34402AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)
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ELM34402AA-N
ELM34402AA-N
P2003BVG
JUL-25-2005
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P2803NVG
Abstract: No abstract text available
Text: Complementary MOSFET ELM34603AA-N •General Description ■Features ELM34603AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V)
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ELM34603AA-N
ELM34603AA-N
P2803NVG
JUL-25-2005
P2803NVG
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复合
Abstract: ELM34603AA
Text: 复合沟道 MOSFET ELM34603AA-N •概要 ■特点 ELM34603AA-N 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 27.5mΩ(Vgs=10V)·Rds(on) < 34mΩ(Vgs=-10V)
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ELM34603AA-N
JUL-25-2005
P2803NVG
复合
ELM34603AA
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marking code 62 3 pin diode
Abstract: sot323 marking code A.C diode marking code 88 MARK A SCD80
Text: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs
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BBY58.
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4
BBY58-02L*
BBY58-02V
marking code 62 3 pin diode
sot323 marking code A.C
diode marking code 88
MARK A SCD80
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34603AA-N •General Description ■Features ELM34603AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V)
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ELM34603AA-N
ELM34603AA-N
P2803NVG
JUL-25-2005
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Untitled
Abstract: No abstract text available
Text: シングル N チャンネル MOSFET ELM34402AA-N •概要 ■特長 ELM34402AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=8A ・ Rds on < 20mΩ (Vgs=10V) ・ Rds(on) < 32mΩ (Vgs=4.5V)
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ELM34402AA-N
P2003BVG
JUL-25-2005
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Infineon Technologies Silicon Tuning Diode
Abstract: No abstract text available
Text: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs
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BBY58.
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4
BBY58-02L*
BBY58-02V
Infineon Technologies Silicon Tuning Diode
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marking r4s
Abstract: R4S BFP640 BFP640 BFP640 noise figure
Text: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications 1 Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
VPS05605
OT343
Jul-25-2002
marking r4s
R4S BFP640
BFP640
BFP640 noise figure
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM34402AA-N •General description ■Features ELM34402AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)
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ELM34402AA-N
ELM34402AA-N
P2003BVG
JUL-25-2005
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Untitled
Abstract: No abstract text available
Text: コンプリメンタリーパワー MOSFET ELM34603AA-N •概要 ■特長 ELM34603AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=7A
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ELM34603AA-N
P2803NVG
JUL-25-2005
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sem 2006
Abstract: No abstract text available
Text: REV ECN.NO ü roe« • < : t-l£'-if EE] \-2Sjl 50# -/ d ì 26 s @ Hf □ □ CF-50 Ì 01000202010001020102015300 50# l\ - U25# JUL25 26 # □ □ ni A, Msn Notes: 1.All Dimensions ore in Millimeters.
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OCR Scan
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1000M
Conn-32
-i--10u
ii30u
1160u"
sem 2006
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Untitled
Abstract: No abstract text available
Text: REVISIONS SYM ZO NE EC N , D K1 Q JO1 00 ERN PLATING NO. REVISED ADD DIEMNSIONS FOR SHIELD BOARD LOCK E APPRD. DATE L.C. A ug4/09 JUL25/12 S.MUGAN '-L 0 O .9 2 ± O . 0 5 !i [0 .0 3 6 ± .0 0 2 ] \ - 0 - \ O . 1 O \ w \ H 0 L E 4 R E Q 'D 0 2 .3 O ± O .O 5
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ug4/09
JUL25/12
JUL31
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Untitled
Abstract: No abstract text available
Text: R E V IS IO N S SYM R .0 1 0 [ R 0 .2 5 ] MAX. TYP. .6 5 0 [1 6 .5 1 ] MIN. ECN, ZO NE A PER ERN ECN NO. E07248 DATE APPRD. JU L25/07 L .C H A N T .5 1 5 [1 3 .0 8 ] MIN. LATCH TO THE H O USING OPENING 1 RECOMMENDED PANEL CUTOUT TOP VIEW .5 9 8 .6 3 4 [1 5 .1 9 ]
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E07248
L25/07
JUL25/07
A070709
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if filter 10.7
Abstract: "Logarithmic Amplifier" Logarithmic Logarithmic Amplifier TDA8780M
Text: INTEGRATED CIRCUITS TDA8780M True logarithmic amplifier Product specification Supersedes data of November 1994 File under Integrated Circuits, IC03 PHILIPS Philips Se m ico n d u cto rs 7iio flZb ocm cm 1995 Jul 25 tst Philips Semiconductors Product specification
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TDA8780M
7110flZb
711002t.
00T1101
if filter 10.7
"Logarithmic Amplifier"
Logarithmic
Logarithmic Amplifier
TDA8780M
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