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    JULY1996 Search Results

    JULY1996 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    July 1996 Linear Technology LinearTechnology Chronicle Original PDF

    JULY1996 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: July 1996 Revision 1.0 DATA SHEET SDC4UV6482- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description IN AD FO V A R N M C AT ED IO N The SDC4UV6482-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as


    Original     		PDF SDC4UV6482- 32MByte 32-megabtye 168-pin, MB81117822A- MP-SDRAMM-DS-20320-7/96

    Untitled

    Abstract: No abstract text available
    Text: KM611001/L CMOS SRAM 1M x 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L -20 : 130 mA(Max.)


    Original     		PDF KM611001/L KM611001/L KM611001P/LP 28-DIP-400 KM611001J/LJ 28-SOJ-400A 576-bit

    Untitled

    Abstract: No abstract text available
    Text: a HIP4086 HARRIS S E M I C O N D U C T O R July1996 80V, 0.5A Three Phase Driver Features Description • Independently Drives 6 N-Channel MOSFETs in Three Phase Bridge Configuration The HIP4086 is a Three Phase Bridge N-Channel MOSFET driver IC. The HIP4086 is specifically targeted for PWM


    OCR Scan     		PDF HIP4086 HIP4086 HIP4081, HIP4081 00b70e

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process


    OCR Scan     		PDF IS62C1024 JULY1996 IS62C1024 072-word SR81995C024

    I11III1

    Abstract: energy meter single phase NCMOS TLV2211 TLV2211IDBV TLV2211Y
    Text: TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS S L0S 156A - MAY 1996 -R E V IS E D JULY1996 • Output Swing Includes Both Supply Rails • • • Low Noise . . . 18 nWVHz Typ at f = 1 kHz Low Input Bias Current. . . 1 pA Typ


    OCR Scan     		PDF TLV2211, TLV2211Y SLOS156A OT-23 TLV2211 clbl724 010342e! TLV2211Y I11III1 energy meter single phase NCMOS TLV2211IDBV

    Untitled

    Abstract: No abstract text available
    Text: <P July 1996 Revision 1.0 FUJI DATA SH EET - “ SDC4UV6482- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6482-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC4UV6482- 32MByte 32-megabtye 168-pin, B81117822A- 200mV. 37iH75b V6482-

    Untitled

    Abstract: No abstract text available
    Text: KM611001/L CMOS SRAM 1M X 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS): 2mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L-20:130 mA(Max.) KM611001/L-25:110 mA(Max.)


    OCR Scan     		PDF KM611001/L KM611001/L-20 KM611001/L-25 KM611001/L-3 100mA KM611001P/LP: 28-DIP-400 KM611001J/LJ: 28-SQJ-400A KM611001/L

    Untitled

    Abstract: No abstract text available
    Text: 256K x 8 CMOS SRAM mosaic semiconductor, inc. MS M8256-25/35/45/55 Issue 4.1 : July 1996 262,144 x 8 CMOS High Speed Static RAM 'Description The MSM8256 is a 2Mbit CMOS high speed static RAM organised as a 256K x 8. This is available in a standard 0.6" DIL package or a


    OCR Scan     		PDF M8256-25/35/45/55 MSM8256 MIL-STD-883. 700mW MSM8256-25/35/45/55 MSM8256SLMB-45 MIL-STD-883