Untitled
Abstract: No abstract text available
Text: K&L Microwave, Inc. K &L Microwave, Inc. is a subsidiary of the Dover Corporation and the recognized world leader in the design and manufacture of RF and Microwave filters. K&L is ISO 9001 certified and offers the most extensive filter-based product mix in the industry
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40GHz.
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Untitled
Abstract: No abstract text available
Text: K&L Microwave Product Catalog Table of Contents ◆ About K&L Microwave 4 ◆ ◆ Terms & Definitions 8 ◆ Suspended Substrate ◆ Specifying Filters 10 ◆ Topology vs. Frequency Range 14 ◆ Lumped Components 17 K L-fil Ceramic Filters E 71 -Bandpass — SB Series
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Untitled
Abstract: No abstract text available
Text: 38GHz Waveguide Diplexer K&L Microwave offers 38GHz waveguide diplex filters at commercial prices and the fastest delivery available. Innovative design and manufacturing techniques allow K&L to maintain the highest standards of quality and performance, while
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38GHz
37018-37658MHz
38278-38918MHz
34318-34958MHz
35668-36308MHz
35578-36218MHz
36928-37568MHz
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Untitled
Abstract: No abstract text available
Text: Cavity Filters ◆ Features - Interdigital K&L Microwave's ED series of interdigital filters offers low loss, high “Q” performance in a low profile package ideally suited for modern system requirements. K&L interdigital filters are available from 500 to 40000MHz with 3dB
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40000MHz
26GHz
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K&L Microwave
Abstract: No abstract text available
Text: General Information ◆ Mission Statement K&L Microwave’s mission is to create high quality, cost effective solutions for our customers. K&L Microwave’s corporate philosophy consists of controlling internal design and production so that we meet or exceed customer’s product
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5662A,
Z-540,
K&L Microwave
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Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits
Abstract: varactor high power varactor
Text: IEEE BCTM 12.1 Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits Invited C. Huang1, K. Buisman1, L. K. Nanver1, P. J. Zampardi2, L. E. Larson3, and L. C. N. de Vreede1 1 Delft University of Technology, Delft, 2628 CD, the Netherlands
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889-A1,
Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits
varactor high power
varactor
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TEKELEC 248
Abstract: tekelec 630 cb 478 2464
Text: MICROWAVE SILICON COMPONENTS Case styles Cb=0.4pF L 43° 47° 43° 47° K 5.49 5.89 .216 .232 Cb=0.15pF J ∅ 30.48 ∅ 31.50 1.200 DIA 1.240 DIA BH200a BH202 M 43° 47° 43° 47° L 4.12 4.52 .162 .178 K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA
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BH202
BH200a
TEKELEC 248
tekelec 630
cb 478
2464
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Untitled
Abstract: No abstract text available
Text: AMERICAN TECHNICAL fi/s a p 3HE D • 0773H0q QQQQ7CH g M A TC BB S T A B L E K D IE L E C T R IC S E R IE S ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications K-31 STABLE K DIELECTRIC CAP. VALUES FROM 0.2 pF to 12 pF
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0773H0q
ELECTR100-
111YBB5R6-100-
111ZBB5R6-100-
111YBB6R2-100-
111ZBB6R2-100-
111YBB6R8-100-
111ZBB6R8-100-
111ZBB7R5-100-
111ZBB8R2-100-
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Untitled
Abstract: No abstract text available
Text: V / U l I I Iv v l w Recommended Mounting Hole Detail C a k C ia lr l D a n l a ^ A a k l A U a K m a t l A I Q iin n h i For Field Replaceable Hermetic Launchers l v .250-36UNS-2B Pin Dia D ia .0 1 2 .0 2 7 .0 1 5 .0 3 4 .0 1 8 .041 .0 2 0 .0 4 6 1.005 .125 PANEL
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250-36UNS-2B
56UNC
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VRP-30
Abstract: KVA05 KVA05R KVA06R KVA07 KVA07R KVA08 KVA08R KVA09 KVA09R
Text: INTERNATIONAL SEMICOND 4^E D • IISEM =1000370 000D01S 017 l ~ —0 ! " O HIGH VOLTAGE RECTIFIER ASSEMBLIES 0 .7 5 -1 .0 Am p Kilovolt, Std. R ecovery Rectifiers I SI P a rt N um ber K VA05 K VA06 K VA07 K V A06 K V A09 K VA10 K V A15 K V A20 K V A25 K VA30
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100037a
KVA05
KVA05R
KVA08
KVA06R
VRP-30
KVA07
KVA07R
KVA08R
KVA09
KVA09R
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Untitled
Abstract: No abstract text available
Text: H E W L E T T - P A C K A R D / C M PN TS Whpt H E W L E T T WHiM P A C K A R D blE D • MM475flM O O l O O b J Ofll HPA MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers SOT-143 Package Features • Cascadable 50 f2 Gain Block
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MM475flM
MSA-0311
OT-143
MSA-0311
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f455
Abstract: No abstract text available
Text: In is ? g © [n I K ]© [l@ © Y RF - MICROWAVE SILICON POWER TRANSISTORS DWG NO. 55LU
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050x45*
55LU085
f455
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reflex klystron
Abstract: klystron x 13 m54401 Klystrons reflex klystron M54402 klystron KHY-122 M54204 klystron reflex wc 218 waveguide
Text: MICROWAVE TUBES & MODULES CBM DPHBO Pbl H M O flY flH i Electron Device Mfg. Corp. nO flCHEHHfl K 0 B0 3 H AM EH M il M H 3HAKAM S Y M B O L S & CODE E X P L A IN E D KjIHCTpOHbl K ly stro n s 4 -) # AHana30H nepeKpuBaeTca AByMH HJIH HeCKOJl bKHMH lipH6opaMH
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AHana30H
ana30He
AHana30H
M44701
reflex klystron
klystron x 13
m54401
Klystrons reflex klystron
M54402
klystron
KHY-122
M54204
klystron reflex
wc 218 waveguide
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Untitled
Abstract: No abstract text available
Text: 903-588P-71 A NOT E S REVISIONS DRAWING NO. SCALE THIS DRAWING. 2. MATERI AL AND FI NI SH: CONTACT: B E R Y L L I U M COPPER, GOLD P L A T E D F E R R UL E ANNE AL E D COPPER, N I C K E L P L A T E D I NS U L A TOR PTFE OTHER METAL PARTS. BRASS, N I C K E L P L A T E D
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903-588P-71
903-588P-71A
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Untitled
Abstract: No abstract text available
Text: 31-70221 NOTESi 2. 3, 4, DRAWING NO. THIRD ANGLE PROJ. M A T ER IA LS DF CDNSTRUCTIDN: RING, END PLATE, HEX NUT = B R A S S / N IC K E L PLATED. BODY = ZINC D IE C A ST / N IC K E L PLATED. LOCKW ASHER = PHDSPHDR BR D N ZE/N IC K EL PLATED, CONTACT = PHDSPHDR BRDNZE/GDLD PLATED.
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111UK471
Abstract: 111XK102 111SK121
Text: AMERICAN TECHNICAL 3ME D G773MGÌ DGG0731 2 ap HIGH K DIELECTRIC SERIES C ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications * R .015 sq. s p ^ p K 4 0 ,0 0 0 i ^ f M S C ^ : h ig h k ;J: Æ-i f ! D IE L E C T R IC v
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G773MGÌ
DGG0731
47pFto4700pP
111XK681-100-
111XK821-100-
111XK102-100-
111YK102-100-
111XK122-100--
111YK122-100-
111YK152-100-
111UK471
111XK102
111SK121
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Untitled
Abstract: No abstract text available
Text: K l HEWLETT mltiM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0270 F eatures • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k > l • Herm etic Gold-ceramic
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MSA-0270
MSA-0270
G01A503
5965-9698E
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Untitled
Abstract: No abstract text available
Text: Q a v a n te k MSA-0285 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 85 Plastic Package Features Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 2.6 GHz 12.0 dB typical Gain at 1.0 GHz Unconditionally Stable k> l
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MSA-0285
MSA-0285
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MSA0270
Abstract: No abstract text available
Text: O a w n te k MSA-0270 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 70 mil Package Features Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 2.8 GHz 12.0 dB typical Gain at 1.0 GHz Unconditionally Stable k>l
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MSA-0270
MSA0270
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Untitled
Abstract: No abstract text available
Text: H E W L E T T - P A C K A R D / C M PN TS blE D He w le tt I f f l J PA C K A R D • 444 7 56 4 D 0 1 0 15 A 47fl ■ H P A m s a _2111 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers SOT-143 Package Features • •
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OT-143
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S8206
Abstract: No abstract text available
Text: TOSHIBA OISCRETE/OPTOl 9097250 TOSHIBA DIS C R E TE /O PT O W ? l = ! i £ 5 ' ,- í ' 7 r - K r-K _ 3 9 C O M ^ y KSUßaSffl O M Band O s c i l l a t o r • • : 00566 A p p licatio n s. P0 = lZOmW ( M I N . ) P0 = I50mW ( T Y P .)
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I50mW
-05MAX
S8206
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28T0157
Abstract: Chip Ferrite Beads For GHz Range Noise Suppressor CM501 b0735 HI1206T161 HR2220V801 HI1206N101 A-0393 transformer eaton el 198 CM3032V301
Text: 1 ' TECHNICALREFERENCELIBRARY D0N0TREM0VE . rf Ir- i1 L.1 • § « s r— j k\ ISrjï I!k\J1rB1i 1u'9t Mi, * ?<rmk m y & .~ r 'j. 1 fj -f —J _ / ^ “ l* -yM Ferrite Solutions for Printed C ircuit Boards Cables and Connectors Ninth Edition ISO 9001 and QS 9000 Certified
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Untitled
Abstract: No abstract text available
Text: Q a v a n te k MSA-0286 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 86 Plastic Package Features • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 2.5 GHz • 12.0 dB typical Gain at 1.0 GHz • Unconditionally Stable k > l
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MSA-0286
310-37V8476
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PDF
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Untitled
Abstract: No abstract text available
Text: l i i f f r JT»?liir i r i LV t l j r t . » 1 1 j f K W È È G f w S & K T ii ^ 0 C o m m erc e D rive M o n tg o m eryville , PA 18936-1013 Tel: 215 631-9 840 SP1524 1 RF & MICROWAVE TRANSISTORS IFF/D ME APPLICATIONS * DESIGNED FOR HIGH POWER PULSE IFF,
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SP1524
09GMMs
50MHz
36G-i215MHs
SD1524-1
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