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    K 524 LE Search Results

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    K 524 LE Price and Stock

    Central Semiconductor Corp CMSZ5245B BK TIN/LEAD

    Zener Diodes 15Vz 16Ohm Zener 11Vr 0.1uA 275mW
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    Mouser Electronics CMSZ5245B BK TIN/LEAD 1,635
    • 1 $0.83
    • 10 $0.681
    • 100 $0.53
    • 1000 $0.366
    • 10000 $0.313
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    Sensata Technologies LELHK11-1-52-40.0-01-V

    Circuit Breakers Cir Brkr Hyd Mag
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LELHK11-1-52-40.0-01-V 3
    • 1 $144.12
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    Sensata Technologies LELK1-1RS4-30452-40

    Circuit Breakers CIRCUIT BREAKER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LELK1-1RS4-30452-40
    • 1 $83.19
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    ADLINK Technology Inc Trolley case for PXES-2590/PMK-1524

    Modules Accessories 570*270*390 mm, 5 Kgs
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    Mouser Electronics Trolley case for PXES-2590/PMK-1524
    • 1 $365.73
    • 10 $334.03
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    ADLINK Technology Inc PXES-2590/PMK-1524 with trolley case

    Datalogging & Acquisition PXES-2590/PMK-1524 with trolley case 3U 9-slot PXI Express chassis with all hybrid slots and 15" 24bit Monitor Keyboard Kit. Trolley case is included.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PXES-2590/PMK-1524 with trolley case
    • 1 $8631.59
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    • 100 $8631.59
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    K 524 LE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TMS27C512

    Abstract: 27c512j TMS27C
    Text: TMS27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC512 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS512E-NOVEMBER 1985-REVISED DECEMBER 1992 J AN D N PA C K A G E S t This Data Sheet is Applicable to All TMS27C512S and TMS27PC512s Symbolized with Code “B" as Described


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    TMS27C512 288-BIT TMS27PC512 SMLS512E-NOVEMBER 1985-REVISED TMS27C512S TMS27PC512s 27c512j TMS27C PDF

    ic 7455

    Abstract: t523 an 6185 SM 6185
    Text: ID l.tìS U L9 4 V -0 2„ X - v + t i S K jSSB O. I u mM I N. : # W X '> + T±feX-v+ 1.0 u m M I N . LO umM I N. — : 3. n o v y 'J o m A ^ 4 .i t n a w p : t =l.6±0.05 A '¿ mm m 6. : 52326-* I, 52368-*»* I 52409-* I, 524 10-* I 524 11-* I „


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    S52340 0251SA52340 ic 7455 t523 an 6185 SM 6185 PDF

    4800L

    Abstract: IC-3052B 1PD42S4800L-A70 424800L uPD424800-L
    Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ / juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability


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    uPD42S4800L uPD424800L PD42S4800L, 424800L PD42S4800L 28-pin /1PD42S4800L-A70, 424800L-A70 /1PD42S4800L-A80, 4800L IC-3052B 1PD42S4800L-A70 uPD424800-L PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PD42S4800, iiPD42S4800, PD42S4800 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PD42S4800, iPD42S4800, PD42S4800 28-pin PD42S4800-70, VP15-207-2 L42752S PDF

    424800-70

    Abstract: nec 424800 JPD42S4800 PD424800LE-70 424800L 424800g5
    Text: NEC MOS INTEGRATED CIRCUIT juPD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /zPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    uPD42S4800 uPD424800 /zPD42S4800, /jPD42S4800 28-pin /iPD42S4800-70, VP15-207-2 424800-70 nec 424800 JPD42S4800 PD424800LE-70 424800L 424800g5 PDF

    424800-70

    Abstract: 42s4800 2716D nec 42s4800 UPD 552 C 424800-80 NEC D 553 C 574 nec uPD424800 nec 2716d
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The J2PD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    uPD42S4800 uPD424800 J2PD42S4800, mPD42S4800 28-pin /iPD42S4800-70, /iPD42S480Q-8Q, VP15-207-2 424800-70 42s4800 2716D nec 42s4800 UPD 552 C 424800-80 NEC D 553 C 574 nec nec 2716d PDF

    UPD42S4800-70

    Abstract: No abstract text available
    Text: NEC b l4S7S2S O Om iD*! m • NECEj A T A SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /IPD42S4800, 424800 are 524 288 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability


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    PD42S4800, /IPD42S4800, /iPD42S4800 28-pin b42755s UPD42S4800, jiPD42S4800, PD42S4800G5, UPD42S4800-70 PDF

    4800L

    Abstract: IC-3052B uPD424800 UPD42S480
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    uPD42S4800L uPD424800L PD42S4800L, 424800L PD42S4800L 28-pin //PD42S4800L-A70, 424800L-A70 /JPD42S4800L-A80, 4800L IC-3052B uPD424800 UPD42S480 PDF

    Untitled

    Abstract: No abstract text available
    Text: HDAS-524,-528 k s â n 12-Bit, 400 KHz Data Acquisition Systems PRODUCT DATA FEATURES • 12-bit resolution, 400 KHz • 8 channels single-ended or 4 channels differen­ tial • Miniature 40-pin DDIP • Full scale gain range from 100 mV to 10V • Three-state outputs


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    HDAS-524 12-Bit, 12-bit 40-pin HDAS-524/528 DS-0197 PDF

    Untitled

    Abstract: No abstract text available
    Text: E2D5032-27-50 O K I Semiconductor MSM6587 524,^8-Word x 1-Bit Serial Register GENERAL DESCRtPTION The MSM6587 is a serial register in 524,288 words x 1 bit configuration featuring medium speed operation with low-power consumption. The MSM6587has a built-in internal address generator circuit allowing continuous serial read / write


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    E2D5032-27-50 MSM6587 MSM6587 MSM6587has PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC DATA SHEET MOS INTEGRATED CIRCUIT juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE Description The ftPD42S4805A, 424805A are 524 288 words by 8 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.


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    juPD42S4805A 24805A ftPD42S4805A, 24805A 28-pin JPD42S4805A-50, 24805A-50 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.


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    DD131S7 KM41C4000AL 41C4000AL 41C4000AL- 130ns 150ns 100ns 180ns 200ns PDF

    EZ31

    Abstract: MSM51256 MSC2321A8A-YS18
    Text: 4bE D O K I • b ? 2 4 2 H G □ D Q cì?DS ibb « O K I J O K I S E M I C O N D U C T O R GROUP s e m ic o n d u c to r M S C 2 3 2 1 A - X X Y S 1 8 524, 288 WORD BY 36 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2321A-XXYS18 is a fully decoded, 524,288 words X 32 bit CMOS dynamic random


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    MSC2321A-XXYS18 MSC2321A-XXYS18 MSM514256AJS) MSM51256JS) MSM511000AJS; 2M24D msc2321a-xxysi T-46-23-18 EZ31 MSM51256 MSC2321A8A-YS18 PDF

    UPD42S4805A

    Abstract: nec d 588
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE D escription The /JPD42S4805A, 424805A are 524 288 w ords by 8 bits dynam ic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind o f page mode and is useful for the read operation.


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    uPD42S4805A uPD424805A /JPD42S4805A, 24805A tPD42S4805A, 28-pin iPD42S4805A-50, 24805A-50 nec d 588 PDF

    doc-70

    Abstract: c431a
    Text: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since


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    MSM27C431AZB 288-Word MSM27C431AZB 7Cf31 MSM27- C431AZB 32-pin MSM27C421ZB) doc-70 c431a PDF

    MSM538002C

    Abstract: SM535
    Text: O K I Semiconductor MSM538002C r 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Mask ROM ~~ ~ D E S C R IP TIO N The OKI MSM538002C is a high-speed CMOS Mask ROM that can electrically switch between 524 288word x 16-bit and 1,048 576-word x 8-bit configurations. The MSM538002C operates o n X * 5 0 V


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    MSM538002C 288-Word 16-Bit 576-Word SM535Â SandPS10n" SM535 PDF

    Untitled

    Abstract: No abstract text available
    Text: Alle techie mbehallen/ i l l rights resttied k 5 2 3 1 C kO i ' B Dol. Deloil. 2 1 / 0 4 / 0 4 A 09 69 501 724 7 PL3 33421 06/02/06 09 69 501 524 7 0 , 7 6 jum Au 31890 21/04/04 JH Plating Nod. Dot. Nome Port n umber JMDR Nome JH losp. All Dim. in mm Stood.


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    PDF

    MSM27C421AZB

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM27C421AZB 524,288-Word x 8-Bit One Time PROM D E S C R IP T IO N The MSM27C421AZB is a 4 M b electrically P rogram m ab le R ead-O nly M em ory o rg an ized as 524 288 ^ rM S M 2 7 C 4 2 1 AZBSM27Cf421 AZB ° p8rateS ° n 3 sinSle 5 V Pow er su PPlv an d is TTL com patible. Since


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    MSM27C421AZB 288-Word MSM27C421AZB MSM27C SM27T1AZB MSM27- C421AZB 32-pin PDF

    KM48V514B

    Abstract: No abstract text available
    Text: CMOS DRAM KM4ÔV514B/BL/BLL 5 1 2 K x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: T h e S a m s u n g K M 4 8 V 5 1 4 B /B I7 B L L is a C M O S h ig h sp e e d 524 ,28 8 x 8 D ynam ic R an d o m A c c e s s M em ory.


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    V514B/BL/BLL 110ns 130ns 150ns 28-LEAD KM48V514B PDF

    Untitled

    Abstract: No abstract text available
    Text: isr VITELIC f V104AJ36, V104A J236 P R E LIM IN A R Y 25 6K X 36, 5 1 2 K x 36 C M O S M E M O R Y M O D U LE S Features Description • 262,144 x 36 bit or 524, 288 x 36 bit organizations • Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast access times 70 ns, 80 ns, 100 ns


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    V104AJ36, V104A 72-lead V104AJ36 V104AJ36/236 PDF

    Untitled

    Abstract: No abstract text available
    Text: •H Y U N D A I HY62VB4DD Series 5 1 Z K N B - b il C M O S 5R A M PREUMINAHY DESCRIPTION TVib HYSZV8400 is a high-speBd, law power and 524,ZBfl x B-bits CMOS static RAM fabricated using Hyundai's high perform ance twin tub CMOS pro c b s s technology. The HY52VB400 has a data retention m ode that guarantees


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    HY62VB4DD HYSZV8400 HY52VB400 HY62VB400 J/12U/150/200ns 040fl4) Z54fl| DSD41 D7B51 1DED3-11-MAYM PDF

    d4516161

    Abstract: MPD4516421
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 w ord x bit * ban k}, respectively.


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    uPD4516421 uPD4516821 uPD4516161 16M-bit PD4516421, 44-pin 50-pin VP15-107-2 IR35-107-2 d4516161 MPD4516421 PDF

    Untitled

    Abstract: No abstract text available
    Text: tiM27SSS □ □ 4 1 b cl2 2TÛ ATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S4800L, 424800L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ^PD42S4800L, 424800L are 524 288 w o rd s b y 8 b its d yn a m ic CMOS RAM s. The fa st page m ode ca p a b ility


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    tiM27SSS //PD42S4800L, 424800L PD42S4800L, 424800L /PD42S4800L 28-pin PDF