LT 428
Abstract: 60598-1 PG 990 ST33 ST333C TO 200AC B-PUK
Text: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I25187/A ST333C.L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator
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I25187/A
ST333C.
O-200AC
LT 428
60598-1
PG 990
ST33
ST333C
TO 200AC B-PUK
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ae rk
Abstract: No abstract text available
Text: ^DRAWING MADE IN AMERICAN PROJECTION B Y A M P IN C O R P O R A T E D . A L L R IG H T S R E S E R V E D . A M P p V E R E D B Y P A T IEN T S A N D /O R P A T E N T S P E N D IN G . 1 R E V ISIO N S ] ZONE m £ z o t e t e » cm .'S H Q W K i. - 1 <f> 2 0 4 - 8 1A - 4
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MIL-M-14,
ae rk
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW ING IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL 20 PUBLICATION R 1G H T S LOC REV I S IONS D I ST FT RESERVED. WI RE LTR DESCRIPTION D WN DATE RELEASED 2 1A P R 2 Û Û 3 R E V I S E D EC 0G3E1-0 I 7 9 - 0 4
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22MAR2Ã
2IAPR2003
MAR2000
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D600K
Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
Text: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.
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EN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2SB631,
2SB631K,
D600K
2SD60
D600K
B631k
b631
k b631k
D600K to 126
TO-126 D600
d600
2SB6
2Sd600
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N8292N
Abstract: ITT301 N3201 N8261N M8290 N8242 55320 8243 Scaler N8266N N8200N
Text: S ig n e tics Integrated Circuits - 8200 Series TTL Reference Table TYPE NO. D E S C R IP T IO N S TO C K NO. O U T L IN E D R W G . NO. C O N N E C T IO N D IA G . N O . N 8200N N 3 201N NB202N N 3203N N 3230N D u a l 5 -B it B u ffe r R e g iste r D u al 5 -B it B u ffe r R e g iste r w ith D In p u ts
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N8200N
55301R
N3201N
55302G
NI3202N
10-Bit
55303E
N8203N
55304C
N8292N
ITT301
N3201
N8261N
M8290
N8242
55320
8243 Scaler
N8266N
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PDF
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RA81-004
Abstract: No abstract text available
Text: E RA81-004 1a ' > a " A * r — ' < l) 7 ÿ - f = t — K • O utline D raw ings SCHOTTKY BARRIER DIODE • t t f t : Features • te V F ■ S Low VF tjv : M arking • x -r Ä 7 " 3 —K ffl Color code : Silver Super high speed switching. High reliability by planer design.
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RA81-004
l95t/R89
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ma180
Abstract: EGN05 T151 X103 al012
Text: E G N 5 3 o a : Outline drawings G E N E R A L -U S E T H YR IST O R • t ir S : Features Compression contact type • tQJ±&1Ate • ftB E High voltage capability • B W f - :t '7 i/ E Ji# $ (d v / d t )a v' * # i ' Large dv/dt : Applications •i —
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EGN05
m247p
EGN05-
50HziEffiift
fct45
4i-i23i
l95t/R89
Shl50
ma180
T151
X103
al012
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L510B
Abstract: 7550h HP10-71GE L1237 1PN 692 34 AE01K VHPX2-71 10F-15D HP10-65E 4147A
Text: N um erical Index Type Number Page A 0 9 0 C E N .225 A 1 1 2 A C N .225 A 1 1 2 B C N .225
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Untitled
Abstract: No abstract text available
Text: 2 R 5 G 2 x 5 0 A • : O utline D raw ings FAST RECOVERY DIODE MODULE ■ # g Unit mm Mt.« J1— IS 6f.5 1T.B t lfl 6 IB ! F e a tu re s 1a 17.5 I ¿ f i • îË lil B îlB l*''îâ L ' • Short Reverse Recovery Time -ß Variety of C onnection M enu
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l2aTg30S3^
19S24#
l95t/R89
Sh150
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ez 902
Abstract: ez7p1 EZ 542
Text: nr UNLESS OTHERWISE NOTED REV. DIMENSIONS ARE IN INCHES TOLERANCES ARE: ONE PLACE DECIMALS ± .1[2.5] A N G LES THREE PLACE DECIMALS ±.005 [.13] TWO PLACE DECIMALS ± .01[.25] FOUR PLACE DECIMALS ±.0020[,05] ± .005 [.13 ] MAX. FO R ALL FLUSH A S S E M B L IE S
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PT-01
47151-PHONE
11-ZB-BB
ez 902
ez7p1
EZ 542
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Untitled
Abstract: No abstract text available
Text: t^T T E IC AN6295NK AN6295NK T= l7 1 Hi-Fi Dual Hi-Fi VTR Peak-Noise-Reduction Circuit • fit 9 Unit : mm A N 6 2 9 5 N K !i, - ' O r - I V T B v' -i X i) r ? 1^-7 7 ' T - X t r - f f - 5 ■/ ? > > i D30 D29 D28 D27 D26 D>25 D24 D23 1a !> ¥ * « 2a 3a 4a
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AN6295NK
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Untitled
Abstract: No abstract text available
Text: SOCKET STRIPS SS, SD, ESS, ESD & HSS SERIES Mates with: TS, TD, HTS, BBS, BBD, BBL, BDL, BHS, TYPE • ■ STRIP I — I I NO. PINS PLATING OPTION 1 ■ PER PFR R OW ROW LEAD STYLE s OTHER OPTION OPTION 5 S P E C IFIC A TIO N S For complete specifications
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HT - 0886
Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
Text: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2
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PWS10
CycleS50
HT - 0886
HT 0886
g3je
ht 9366
MARKING LE50
T108
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sht-1s
Abstract: No abstract text available
Text: UNLESS OTHERWISE NOTED REV. | B 5 DIMENSIONS ARE IN INCHES TOLERANCES ARE: ONE PLACE DECIMALS: ANGLES THREE PLACE DECIMALS: ± TWO PLACE DECIMALS: FOUR PLACE DECIMALS: ± ± ASSEM BLY S O C K E T ST R IP XSX-1XX-XX-XX-X-X SHEET 2 OF 2 .005 [.1 3 ] MAX. FO R ALL FLUSH
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11-28-Si
sht-1s
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Untitled
Abstract: No abstract text available
Text: IBM2520L8767 IBM Processor for ATM Resources Features pendent: one can use SRAM devices while the other uses DRAM devices. A single array of memory can be used in systems whose sus tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications.
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IBM2520L8767
102Mb/s.
400Mb/s
chapt07
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IT 8517
Abstract: u37008 9-1437007-9 310CT 622-2053 CM 8517 437007
Text: RÉlLÉiASED FO R P U BLIC AC IÓ N TH IS DRAWING tS U N PU B L IS H E D . BY TYCO ELECTRONICS CORPORATION. i a . COPYRIGHT LOC A L L RIGHTS R E S E R V E D . DfST R E V IS IO N S KW . J p DESCRIPTION LTR R e le a s e d F J O O - 16 4 0 - 0 0 DATE DWN
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310CTÃ
500VDC
1000VRMS
CONTRO-3663
622-4G53
U37008-5
31MAR200Q
IT 8517
u37008
9-1437007-9
310CT
622-2053
CM 8517
437007
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PDF
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2SD480
Abstract: 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SD297
2SD476
3D478
2SD479
2SD480
2SD480
2SD297
2SD388
25D40
k 553 y 1a
2sd438 transistor
2sd400 transistor data
2SD392
2SD415
2SD400
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PDF
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ci 4019
Abstract: No abstract text available
Text: PF669-02 SEDI 640 D o t M a t r ix H ig h D u t y L C D D r iv e r • 80-bit Output • 1/300 Duty Max. • 2.7 to 5.5Vdc Logic Power Supply •DESCRIPTION The SED 1640 is the 80-segment column output driver that is appropriate to driving of a large-capacity, dot-matrix
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PF669-02
80-bit
80-segment
SED1631
H-246
ci 4019
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ATIC04
Abstract: SH7268 VSS59
Text: ♦ 4 Figure 1.2 1 Pin Assignment for the SH7268 Group L PVcc[ PC2>RDAvr.«CK6[ P C ^.'W K /D a .lL U R x D s f PC4AV E1 AVE/DDMLU/Tx 0 5 ( p o i /S d PCs'rSs.C RcO C R<0'CR0 CRk2AFCO [ PVcc [
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aTIC04B
DA0K01
MCS11
/TIC040/T
IS01/TIC04D
/A23/TxDo[
F17/SDJVP
SH7268
ATIC04
VSS59
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PDF
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ST333C
Abstract: No abstract text available
Text: Bulletin 125187/A International S Rectifier s t 333 c .l s e rie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • M e ta l c a s e w ith c e ra m ic in s u la to r ■ In te rn a tio n a l s ta n d a rd c a s e T 0 -2 0 0 A C B -P U K ■ A ll d iffu s e d d e s ig n
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125187/A
D-568
ST333C.
-10ms
D-569
ST333C
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PDF
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S L33D
Abstract: No abstract text available
Text: Ordering number : EN4782A _ 2SC5044 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • H igh speed tf= 100ns typ . •H igh reliab ility (H VP process). • H igh breakdow n voltage (V cbo = 1600V).
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EN4782A
2SC5044
100ns
h0h0200
S L33D
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PDF
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Untitled
Abstract: No abstract text available
Text: F-207 • E IINIAILS" r SPECIFICATIONS For complete specifications see www.samtec.com?TS or www.samtec.com?TD T S ,T D t o Insu lator Material: Black G.F. Polyester Terminal Material: Brass, except Style G is Phosphor Bronze Plating: Au over 50p" 1,27pm Ni or
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F-207
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sti333
Abstract: No abstract text available
Text: Bulletin 125170/A International S Rectifier ST333C.C s e r ie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • M etal case with ceram ic insulator ■ International standard case T 0 -2 0 0 A B E-PUK ■ All diffused design ■ Center a m plifying gate
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125170/A
ST333C.
D-598
D-599
sti333
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD1293M/2SD1863 h T7 > v ^ £ / T ransistors 2SD1293M 2SD1o03 NPN y lJ ^ > h 7 > y ^ ^ 4 3 ^ j± i1 iffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistors • W F N - a ia / D 'm e H S io n s U n it: mm N£r>4\''V'4i'r • « * 1) VCE O = 8 0 V i:li^ 'o
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2SD1293M/2SD1863
2SD1293M
2SD1o03
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