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    K X 1 DRAM Search Results

    K X 1 DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    K X 1 DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 12 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung K M 4 2 8 C 1 2 8 is a CMOS 1 2 8 K X 8 bit Dual Port DRAM. It consists ot a 1 2 8 K X 8 dynamic random


    OCR Scan     		PDF KM428C128 40-PIN 40/44-PIN

    28c128

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 128 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random


    OCR Scan     		PDF KM428C128 428C128 40-PIN 28c128

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 128 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random


    OCR Scan     		PDF KM428C128 428C128 100ns 125ns 150ns 180ns 40-PIN

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56HW164DB Series, HB56HW165DB Series HB56HW164DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 4 k Refresh, 1-Bank Module 4 pcs of 1 M X 16 Components HB56HW165DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 1 k Refresh, 1-Bank Module (4 pcs of 1 M X 16 Components)


    OCR Scan     		PDF HB56HW164DB HB56HW165DB 64-bit, ADE-203-699C 16-Mbit HM51W16165) Nippon capacitors

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56HW164DB Series, HB56HW165DB Series HB56HW164DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 4 k Refresh, 1-Bank Module 4 pcs of 1 M X 16 Components HB56HW165DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 1 k Refresh, 1-Bank Module (4 pcs of 1 M X 16 Components)


    OCR Scan     		PDF HB56HW164DB HB56HW165DB 64-bit, ADE-203-699C 16-Mbit HM51W16165) Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI


    OCR Scan     		PDF HB56H232 HB56H132 HB56H232B/SB 32-bit, HB56H132B/SB ADE-203-700C 16-Mbit HM5118165)

    Untitled

    Abstract: No abstract text available
    Text: KMM536512B DRAM MODULES 5 1 2 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 5 1 2 B is a 5 1 2K bit X 3 6 Dynamic RAM high density memory module. The Sam­ sung K M M 5 3 6 5 1 2 B consist of sixteen CMOS 2 5 6 K X 4


    OCR Scan     		PDF KMM536512B 20-pin 18-pin 72-pin 130ns

    Untitled

    Abstract: No abstract text available
    Text: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI


    OCR Scan     		PDF HB56H232 HB56H132 HB56H232B/SB 32-bit, HB56H132B/SB ADE-203-700C 16-Mbit HM5118165)

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)


    OCR Scan     		PDF HB56G236 HB56G136 HB56G236B/SB 36-bit, HB56G136B/SB ADE-203-702C 16-Mbit HM5118160) Nippon capacitors

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)


    OCR Scan     		PDF HB56G236 HB56G136 HB56G236B/SB 36-bit, HB56G136B/SB ADE-203-702C 16-Mbit HM5118160) Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56G232 Series, HB56G132 Series HB56G232B/SB 8 MB FP DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56G132B/SB 4 MB FP DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI ADE-203-701C (Z)


    OCR Scan     		PDF HB56G232 HB56G132 HB56G232B/SB 32-bit, HB56G132B/SB ADE-203-701C 16-Mbit HM5118160)

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56G232 Series, HB56G132 Series HB56G232B/SB 8 MB FP DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56G132B/SB 4 MB FP DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI ADE-203-701C (Z)


    OCR Scan     		PDF HB56G232 HB56G132 HB56G232B/SB 32-bit, HB56G132B/SB ADE-203-701C 16-Mbit HM5118160) Nippon capacitors

    RSN 315 H 42

    Abstract: RSN 314 H 41 data sheet ic 4558 4558 dd rca 645 RS 4558 64kx1 dram amd 8150 design specification dram 64kx1 Am8157
    Text: Am8150 Display Refresh Controller > 3 DISTINCTIVE CHARACTERISTICS A ddress co ntro lle r in bit-m apped graphics system s Perform s video refresh, m em ory arbitration, dynam ic RAM control, and dynam ic RAM refresh functions 18-bit address supports 1 6 K x 1 , 1 6 K x 4 , 6 4 K x 1 , and


    OCR Scan     		PDF 18-bit 16Kx1, 16Kx4, 64Kx1, Am8150 AIS-B-20M-5/87-0 04478C RSN 315 H 42 RSN 314 H 41 data sheet ic 4558 4558 dd rca 645 RS 4558 64kx1 dram amd 8150 design specification dram 64kx1 Am8157

    Untitled

    Abstract: No abstract text available
    Text: HB56E836/HB56E436 Series HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M x 4 and 4 pcs of 4 M x 1 Components)


    OCR Scan     		PDF HB56E836/HB56E436 HB56E836 36-bit, HB56E436 ADE-203-673A HB56E836 16-Mbit HM5117405) HM514105)

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)


    OCR Scan     		PDF HB56UW272EJN HB56UW264EJN 72-bit, 64-bit, ADE-203-717C HB56UW272EJN, Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56UW472EJN Series, HB56UW464EJN Series HB56UW472EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 4 k Refresh, 1-Bank Module 18 pcs of 4 M X 4 Components HB56UW464EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 4 k Refresh, 1-Bank Module (16 pcs of 4 M X 4 Components)


    OCR Scan     		PDF HB56UW472EJN HB56UW464EJN HB56UW472EJN 72-bit, HB56UW464EJN 64-bit, ADE-203-718C HB56UW472EJN,

    Untitled

    Abstract: No abstract text available
    Text: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)


    OCR Scan     		PDF HB56UW272EJN HB56UW264EJN HB56UW272EJN 72-bit, HB56UW264EJN 64-bit, ADE-203-717C HB56UW272EJN,

    Untitled

    Abstract: No abstract text available
    Text: Z Am8150 Display Refresh Controller > 3 DISTINCTIVE CHARACTERISTICS A ddress co n tro lle r in bit-m apped graphics system s Perform s video refresh, m em ory arbitration, dynam ic RAM control, and dynam ic RAM refresh functions 18 -bit address supports 1 6 K x 1 , 1 6 K x 4 , 6 4 K x 1 , and


    OCR Scan     		PDF Am8150 AIS-B-20M

    KMM591000B7

    Abstract: KMM591000B-7 KMM591000B6 KMM591000B
    Text: KMM591000B DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 9 1 0 0 0 B is a 1 M bit X 9 Dynamic RAM high density m em ory module. The Samsung K M M 5 9 10OOB consist o t nine K M 4 1C 10OOBJ DRAMs


    OCR Scan     		PDF KMM591000B 10OOB 10OOBJ 20-pin 30-pin KMM591OOOB- 591000B- KMM591000B7 KMM591000B-7 KMM591000B6 KMM591000B

    m5324

    Abstract: KMM5324004CK KMM5324004CKG
    Text: KM M 5324004C K/C KG K M M 5324104C K /C K G DRAM M O D ULE K M M 5324004C K/CK G & KM M 5324104CK/CKG Fast Page M ode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M M 53240 1 0 4 C K is a 4 M x 3 2 b its


    OCR Scan     		PDF M5324004C KMM5324104CK/CKG KMM5324004CK/CKG KMM5324104CK/CKG KMM53240 4Mx32bits 24-pin 72-pin m5324 KMM5324004CK KMM5324004CKG

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    XA03

    Abstract: AS4LC4M16S0
    Text: Advance information •■ AS4LC16M4S0 AS4LC8M8S0 AS4LC4M16S0 I 3.3V 256Kx32 CM OS synchronous DRAM Features • O rg a n iz a tio n • • • • • • - 4 ,1 9 4 ,3 0 4 w o r d s x 4 b its x 4 b an k s 1 6 M x 4 - 2 ,0 9 7 ,1 5 2 w o r d s x 8 b its x 4 b an k s ( 8 M x 8 )


    OCR Scan     		PDF AS4LC16M4S0 AS4LC4M16S0 256KX32 16Mx4) 54-pin AS4LC16M4S0-8TC AS4LC16M4S0-10TC AS4LC8M8S0-10TC XA03 AS4LC4M16S0

    SBS IN CIRCUIT

    Abstract: Nippon capacitors
    Text: HB56A832BS/SBS, HB56A432BR/SBR Series HB56A832BS/SBS 32 MB Unbuffered FP DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56A432BR/SBR 16 MB Unbuffered FP DRAM SIMM 4-Mword X 32-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components)


    OCR Scan     		PDF HB56A832BS/SBS, HB56A432BR/SBR HB56A832BS/SBS 32-bit, ADE-203-728B 16-Mbit SBS IN CIRCUIT Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword X 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components) HITACHI


    OCR Scan     		PDF HB56U832 HB56U432 HB56U832B/SB 32-bit, HB56U432B/SB ADE-203-736B 16-Mbit HM5117405)