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    K-BAND UHF TRANSISTOR Search Results

    K-BAND UHF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K-BAND UHF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TFSM

    Abstract: KTC3730F
    Text: SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A Small rbb Cc Typ. 4pS . MAXIMUM RATING (Ta=25 ) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3730F 500MHz TFSM KTC3730F

    KTC3605T

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G ・Low Noise Figure, High Gain. 3 4 ・NF=1.1dB, |S21e| =13dB f=1GHz . 2 D F A ・Two internal isolated Transistors in one package.


    Original     		PDF KTC3605T -j250 -j150 -j100 KTC3605T

    KTC3605T

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G Low Noise Figure, High Gain. 3 4 2 NF=1.1dB, |S21e| =13dB f=1GHz . D F A Two internal isolated Transistors in one package.


    Original     		PDF KTC3605T -j250 -j150 -j100 KTC3605T

    KTC3730V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3730V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. Small rbb’Cc Typ. 4pS . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 ) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3730V 500MHz KTC3730V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3730V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. Small rbb’Cc Typ. 4pS . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 ) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3730V 500MHz

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・Small rbb’Cc Typ. 4pS . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3730F 500MHz

    KTC3620S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3620S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E B L L FEATURES DIM A B C D E G H J K L M N P Q ・High Gain. D ・Low Noise Figure. 3 G H A 2 1 Q J K MAXIMUM RATING Ta=25℃ CHARACTERISTIC P


    Original     		PDF KTC3620S KTC3620S

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Small rbb Cc Typ. 4pS . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3730F 500MHz 500MHz,

    KTC3770V

    Abstract: transistor j50 marking s22
    Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3770V -j250 -j150 -j100 KTC3770V transistor j50 marking s22

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25 1 SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3770F -j250 -j150 -j100 -j100

    j50 transistor

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3770F -j250 -j150 -j100 -j100 j50 transistor

    KTC3770V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3770V -j250 -j150 -j100 KTC3770V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3640V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES B ・Low Noise Figure, High Gain. ・NF=1.4dB, S21e 2=9.0dB 2GHz D G H A 2 1 K 3 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3640V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・NF=1.1dB, |S21e|2=11dB f=1GHz . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC3770F -j250 -j150 -j100

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC2762 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.


    OCR Scan     		PDF 2SC2762 2SC2762

    2SC1200

    Abstract: feed through capacitor
    Text: SILICON NPN EPITAXIAL PLANAR TRANSISTOR O UHF - S ^ K I Î J Ü S f f l O UHF ù o il ft X UHF~S Band Power A m p lifie r A p p lic a tio n s . UHF-S Band O s c il l a t o r A p p lic a tio n s . * & f t ^ £ S g T =r V* mm INDUSTRIAL APPLICATIONS l^ o Lx*t> t-t*


    OCR Scan     		PDF 2SC1200 C1200 2SCI200 2SC1200 feed through capacitor

    2SC3120

    Abstract: No abstract text available
    Text: 2SC3120 TO SH IBA 2 S C 3 1 20 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS VHF ~ UHF BAND RF AMPLIFIER APPLICATIONS + 0.5 2 .5 -0 .3 + 0.25 k 1-5 I- MAXIMUM RATINGS Ta = 25°C SYMBOL VCBO VCEO v EBO ic


    OCR Scan     		PDF 2SC3120 2SC3120

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3862 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3862 TV TUNER, UHF MIXER APPLICATIONS. VH F-U HF BAND RF AMPLIFIER APPLICATIONS. Exchange of Emitter for Base in 2SC3120 MAXIMUM RATINGS Ta = 25°C u HA k ACt .u k IS t IC Collector-Base Voltage


    OCR Scan     		PDF 2SC3862 2SC3120

    transistor NEC D 587

    Abstract: NEC D 587 TRANSISTOR R44 z 607 ma 2SC3585 transistor 5951 nec 1041
    Text: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION P A C K A G E DIM ENSIO NS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


    OCR Scan     		PDF 2SC3585 2SC3585 transistor NEC D 587 NEC D 587 TRANSISTOR R44 z 607 ma transistor 5951 nec 1041

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 <; k 1 * Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. + 0.2 2 . 9 - Cl3 • Superior Cross Modulation Performance.


    OCR Scan     		PDF 3SK153 025pF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. + 0.2 2 .9 - tt 3 • Superior Cross Modulation Performance.


    OCR Scan     		PDF 3SK153 025pF

    3SK153

    Abstract: 52S marking SK153 200-I
    Text: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS • • • + 0.2 2 .9 Superior Cross Modulation Performance.


    OCR Scan     		PDF 3SK153 025pF 3SK153 52S marking SK153 200-I

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5315 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Unit in mm + 0.5 2.5-0.3 + 0.25 k 1-5 - ° - 15>i • Low Noise Figure : NF = 1.3dB (f=2GHz) •


    OCR Scan     		PDF 2SC5315 16GHz SC-59

    313-105

    Abstract: 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406
    Text: TOSHIBA 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K 3 1 79 UHF-SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Gate-Drain Voltage


    OCR Scan     		PDF 2SK3179 SYM57 313-105 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406