k1206
Abstract: k1206 220 r3 cgs resistor G200
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10125 is an internally matched 135–watt GOLDMOS FET intended for linear driver and final applications from 1.4 to 1.6 GHz such as DAB/DRB. It operates at 40% efficiency with 12.5 dB typical
|
Original
|
K1206
1-877-GOLDMOS
1522-PTF
k1206
k1206 220 r3
cgs resistor
G200
|
PDF
|
10125
Abstract: G200 K1206 rf mosfet ericsson
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated
|
Original
|
K1206
1-877-GOLDMOS
1301-PTF
10125
G200
K1206
rf mosfet ericsson
|
PDF
|
rf mosfet ericsson
Abstract: 212-136 G200 K1206 mosfet 6 ghz PTF10035
Text: PTF 10035 30 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10035 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts power output.
|
Original
|
K1206
1-877-GOLDMOS
1301-PTF
rf mosfet ericsson
212-136
G200
K1206
mosfet 6 ghz
PTF10035
|
PDF
|
k1206
Abstract: G200 LDMOS transistor 1W
Text: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
|
Original
|
K1206
1-877-GOLDMOS
1301-PTF
k1206
G200
LDMOS transistor 1W
|
PDF
|
k1206
Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
Text: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum
|
Original
|
K1206
G-200,
1-877-GOLDMOS
1301-PTF
k1206
cgs resistor c7
A123
transistor l2
k1206 220 r3
|
PDF
|
k1206
Abstract: RF Transistor 1500 MHZ
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
|
Original
|
K1206
G-200,
1-877-GOLDMOS
1301-PTF
RF Transistor 1500 MHZ
|
PDF
|
G200
Abstract: K1206 103 smt resistor
Text: PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.
|
Original
|
K1206
1-877-GOLDMOS
1301-PTF
G200
K1206
103 smt resistor
|
PDF
|
G200
Abstract: K1206 k1206 220 r3
Text: PTF 10135 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface
|
Original
|
K1206
1-877-GOLDMOS
1301-PTF
G200
K1206
k1206 220 r3
|
PDF
|
rf mosfet ericsson
Abstract: k1206 cgs resistor c7
Text: e PTF 10112 60 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,
|
Original
|
K1206
G-200,
1-877-GOLDMOS
1301-PTF
rf mosfet ericsson
k1206
cgs resistor c7
|
PDF
|
9953A
Abstract: jx 903 PTF 10135 G200 K1206 ldmos
Text: PTF 10135 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10135 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
|
Original
|
K1206
1-877-GOLDMOS
1522-PTF
9953A
jx 903
PTF 10135
G200
K1206
ldmos
|
PDF
|
SN0608098-GP
Abstract: BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761
Text: 5 4 3 2 1 FOOSE UMA Schematics Document AMD 15.4" D D AMD Giffin CPU S1G2 AMD RS780 +SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation
|
Original
|
RS780
SB700
BCM5761E
BCM5756M
ICS9LPRS474AKLFT
4X801
07237-SB
BQ24745RHDR-GP
SN0608098-GP
BQ24745RHDR-GP
lcd 15.4 inverter
EPSON C691 MAIN
AMD RS780
tps51125
MEC5035
foxconn
TPS51117PWR-GP
BCM5761
|
PDF
|
SN0608098-GP
Abstract: BQ24745RHDR-GP TPS51117PWR-GP nxp pr533 foose rs780M mec5035 c840 dell BCM5761 RS780
Text: 5 4 3 2 1 FOOSE UMA 14" Schematics Document D D AMD Giffin CPU S1G2 RS780M + SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,
|
Original
|
RS780M
SB700
BCM5761E
BCM5756M
FOOSE-14
ICS9LPRS474AKLFT
4X701
07235-SB
BQ24745RHDR-GP
SN0608098-GP
BQ24745RHDR-GP
TPS51117PWR-GP
nxp pr533
foose
rs780M
mec5035
c840 dell
BCM5761
RS780
|
PDF
|
WPC775L
Abstract: G5281RC1U-GP TPS51125 SCD22U6D3V2KX-1GP SNLVC1G08DCKRG4-GP 750R2F-GP 51125 htc one x SCD1U16V2KX-3GP wistron
Text: 5 4 3 2 S13 Block Diagram DDRII Slot 0 8 667/800 DDRII 667/800 MHz Channel A DDRII Slot 1 9 667/800 DDRII 667/800 MHz Channel B 1 CPU V_CORE Project code PCB Number Revision Thermal & Fan G792 21 AMD S1G2 CPU : 91.4H801.001 : 48.4H801.0SB : SB INPUTS OUTPUTS
|
Original
|
638-Pin
4H801
ISL6265
TPS51124
ICS9LPR480
16X16
RS780M
TPS51125
RS780M
WPC775L
G5281RC1U-GP
TPS51125
SCD22U6D3V2KX-1GP
SNLVC1G08DCKRG4-GP
750R2F-GP
51125
htc one x
SCD1U16V2KX-3GP
wistron
|
PDF
|
seg np2
Abstract: WPC775 TPS51125 OZ711MZ wistron SKT-CPU638P-GP-U ABB C564 SLG8SP628 BQ24745RHDR-GP seg np1-1
Text: 5 4 3 2 Olan TM15" Block Diagram DDR2 Project code: 91.4Z701.001 PCB P/N : 48.4Z701.0SB REVISION : 07249-SB PCB STACKUP 667/800MHz DDR2 667/800MHz 667/800 MHz 8,9 G792 TPS51125 INPUTS VCC 25 4,5,6,7 3D3V_S5(7A) SYSTEM DC/DC S CRT INPUTS IN OUT 1D1V_S0(9A)
|
Original
|
4Z701
07249-SB
667/800MHz
TPS51125
638-Pin
uFCPGA638
TPS51124
16X16
seg np2
WPC775
TPS51125
OZ711MZ
wistron
SKT-CPU638P-GP-U
ABB C564
SLG8SP628
BQ24745RHDR-GP
seg np1-1
|
PDF
|
|
|
SC10U10V5KX-2GP
Abstract: htc schematic rtm880 MDIN325 SLG8SP628 G5281RC1U-GP SCD1U10V2KX PDTA124EU-1-GP DDR3 fs1 SBEC2 WPCE775C
Text: 5 4 3 2 X17 Block Diagram DDRII Slot 0 8 667/800 CLK GEN DDRII Slot 1 9 667/800 AMD S1G2 CPU DDRII 667/800 MHz Channel B 16X16 G577 VRAMx4 GDDR3 512MB ISL6265 24 INPUTS OUTPUTS DCBATOUT VCC_CORE D SYSTEM DC/DC TPS51124 OUTPUTS 1D8V_S3 DCBATOUT DDRII 64MB 12
|
Original
|
638-Pin
4H901
4H902
4H704
4H903
ISL6265
ICS9LPRS480
TPS51124
32Mbx32bitsx4pcs
16X16
SC10U10V5KX-2GP
htc schematic
rtm880
MDIN325
SLG8SP628
G5281RC1U-GP
SCD1U10V2KX
PDTA124EU-1-GP DDR3 fs1
SBEC2
WPCE775C
|
PDF
|
SCD1U50V3KX-GP what is this
Abstract: wpce775 SC1820 TPS51125 MDIN325 ALC888-VC2-GR RS780M SC10U10V5KX-2GP Wistron Corporation WPCE775C
Text: 5 4 3 2 X17 Block Diagram DDRII Slot 0 8 667/800 CLK GEN ICS9LPRS480 Thermal & Fan G792 23 AMD S1G2 CPU 3 DDRII Slot 1 9 667/800 OUTPUTS DCBATOUT VCC_CORE D SYSTEM DC/DC INPUTS 24 OUTPUTS 1D8V_S3 DCBATOUT SYSTEM DC/DC New Card HyperTransport LINK0 CPU I/F
|
Original
|
638-Pin
4H901
4H902
4H704
4H903
ISL6265
ICS9LPRS480
TPS51124
32Mbx32bitsx4pcs
16X16
SCD1U50V3KX-GP what is this
wpce775
SC1820
TPS51125
MDIN325
ALC888-VC2-GR
RS780M
SC10U10V5KX-2GP
Wistron Corporation
WPCE775C
|
PDF
|
G1432Q
Abstract: WPCE775 Z12V WPCE775C TPS51125 MDIN325 216-0683013 isl6265 Wistron Corporation si7686
Text: 5 4 3 2 X17 Block Diagram DDRII Slot 0 8 667/800 CLK GEN DDRII Slot 1 9 667/800 AMD S1G2 CPU DDRII 667/800 MHz Channel B HDMI CONN 17 OUTPUTS DCBATOUT VCC_CORE D SYSTEM DC/DC INPUTS 24 OUTPUTS 1D8V_S3 DCBATOUT SYSTEM DC/DC New Card HyperTransport LINK0 CPU I/F
|
Original
|
638-Pin
4H901
4H902
4H704
4H903
ISL6265
ICS9LPRS480
TPS51124
32Mbx32bitsx4pcs
16X16
G1432Q
WPCE775
Z12V
WPCE775C
TPS51125
MDIN325
216-0683013
isl6265
Wistron Corporation
si7686
|
PDF
|
tps51125
Abstract: 1C6102 slg silego clock Wistron Corporation R407B webcam Schematic Diagram WPC775 F0758 SI7686 ALC268
Text: 5 4 3 2 Olan TM15" Block Diagram DDR2 Project code: 91.4Z701.001 PCB P/N : 48.4Z701.001 REVISION : 07249-1 PCB STACKUP 667/800MHz DDR2 667/800MHz 667/800 MHz 8,9 G792 TPS51125 INPUTS VCC 25 4,5,6,7 3D3V_S5(7A) SYSTEM DC/DC S CRT INPUTS IN OUT 1D1V_S0(9A)
|
Original
|
4Z701
667/800MHz
TPS51125
638-Pin
uFCPGA638
TPS51124
16X16
SLG8SP628
tps51125
1C6102
slg silego clock
Wistron Corporation
R407B
webcam Schematic Diagram
WPC775
F0758
SI7686
ALC268
|
PDF
|
TPS51125
Abstract: WPC775 flash memory 16M wistron OZ711MZ0 seg np2 wistron homa BCM5764M RS780 Wistron Corporation
Text: 5 4 3 2 Olan TM15" Block Diagram DDR2 Project code: 91.4Z701.001 PCB P/N : 48.4Z701.001 REVISION : 07249-1 PCB STACKUP 667/800MHz DDR2 667/800MHz 667/800 MHz 8,9 G792 TPS51125 INPUTS VCC 25 4,5,6,7 3D3V_S5(7A) SYSTEM DC/DC S CRT INPUTS IN OUT 1D1V_S0(9A)
|
Original
|
4Z701
667/800MHz
TPS51125
638-Pin
uFCPGA638
TPS51124
16X16
SLG8SP628
TPS51125
WPC775
flash memory 16M
wistron
OZ711MZ0
seg np2
wistron homa
BCM5764M
RS780
Wistron Corporation
|
PDF
|
SN0608098
Abstract: TPS51125 PS8122 webcam Schematic Diagram OZ711MZ ICS9LPRS480BKLFT wistron homa OZ711MZ0 Wistron Corporation 8c615
Text: 5 4 3 2 Olan TM15" Block Diagram DDR2 Project code: 91.4Z701.001 PCB P/N : 48.4Z701.001 REVISION : 07249-1 PCB STACKUP 667/800MHz DDR2 667/800MHz 667/800 MHz 8,9 G792 TPS51125 INPUTS VCC 25 4,5,6,7 3D3V_S5(7A) SYSTEM DC/DC S CRT INPUTS IN OUT 1D1V_S0(9A)
|
Original
|
4Z701
667/800MHz
TPS51125
638-Pin
uFCPGA638
TPS51124
16X16
SLG8SP628
SN0608098
TPS51125
PS8122
webcam Schematic Diagram
OZ711MZ
ICS9LPRS480BKLFT
wistron homa
OZ711MZ0
Wistron Corporation
8c615
|
PDF
|
1301P
Abstract: K1206 ldmos
Text: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output
|
OCR Scan
|
K1206
G-200,
-877-GOLD
1301-PTE
1301P
ldmos
|
PDF
|
k1206
Abstract: Ericsson B
Text: ERICSSON 0 PTF 10112 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,
|
OCR Scan
|
K1206
G-200,
1-877-GOLDMOS
1301-PTF10112
k1206
Ericsson B
|
PDF
|
c 4977 transistor
Abstract: transistor D 2395
Text: ERICSSON ^ PTF 10135 5 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation
|
OCR Scan
|
K1206
K1206
G-200,
1-877-GOLDMOS
EUS/KR1301-PTF
c 4977 transistor
transistor D 2395
|
PDF
|
transistor number D 2498
Abstract: No abstract text available
Text: ERICSSON 5 PTE 10122* 50 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts minimum
|
OCR Scan
|
Rating10
K1206
K1206
G-200,
1-877-GOLDMOS
1301-PTE10122
transistor number D 2498
|
PDF
|