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Toshiba America Electronic Components TK12A60U(Q,M) MOSFET N-CH 600V 12A TO220SIS
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Catalog Datasheet	MFG & Type	Document Tags	PDF
K12A60U Abstract: TK12A60U k12a60 code MCV marking MCV Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV	PDF
K12A60U Abstract: K12A k12a60 Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U K12A60U K12A k12a60	PDF
K12A60U Abstract: k12a60 TK12A60U VDS208 Text: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)	Original	TK12A60U SC-67 2-10U1B 20070701-JA K12A60U k12a60 TK12A60U VDS208	PDF
Untitled Abstract: No abstract text available Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U	PDF
Untitled Abstract: No abstract text available Text: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)	Original	TK12A60U	PDF
k12a60 Abstract: K12A60U TK12A60U transistor K12A Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U k12a60 K12A60U TK12A60U transistor K12A	PDF
Untitled Abstract: No abstract text available Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U	PDF
k12a60 Abstract: K12A60U TK12A60U k12a6 K12A Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U k12a60 K12A60U TK12A60U k12a6 K12A	PDF
k12a60 Abstract: TK12A60U K12A60U Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U k12a60 TK12A60U K12A60U	PDF