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Toshiba America Electronic Components 2SK2662(Q) Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS - Rail/Tube (Alt: 2SK2662(Q))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SK2662(Q)	Tube			50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies CRCW120682R5FKEA Thick Film Resistors - SMD 1/4watt 82.5ohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW120682R5FKEA	Reel	15,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00856	Buy Now
Bourns Inc 4608X-102-272LF Resistor Networks & Arrays 8pins 2.7Kohms Isolated
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	4608X-102-272LF	Bulk	1,600		100	1 - 10 - 100 $0.099 1000 $0.091 10000 $0.073	Buy Now
Amphenol Corporation 88-565831-98P Circular MIL Spec Connector MS/TV WALL MOUNTS (LC)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	88-565831-98P	Each	674		1	1 $42.8 10 $32.16 100 $25.34 1000 $25.34 10000 $25.34	Buy Now
Vishay Intertechnologies VS-KBPC810PBF Bridge Rectifiers RECOMMENDED ALT KBPC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	VS-KBPC810PBF	Bulk			100	1 - 10 - 100 $1.99 1000 $1.76 10000 $1.76	Buy Now

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K2662 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417	PDF
K2662 Abstract: transistor TF 431 toshiba code igbt Text: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications • • • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	GT10J321 100HIBA K2662 transistor TF 431 toshiba code igbt	PDF
K2662 Abstract: TRANSISTOR MAKING 2SK2662 Text: K2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2662 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.0 S (typ.)	Original	2SK2662 K2662 TRANSISTOR MAKING 2SK2662	PDF
K2662 Abstract: 2SK2662 Text: K2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2662 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance z Low leakage current	Original	2SK2662 K2662 2SK2662	PDF
K2662 Abstract: gt10j321 2-10R1C Text: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	GT10J321 K2662 gt10j321 2-10R1C	PDF
K2662 Abstract: gt10j321 2-10R1C Text: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications • • • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	GT10J321 K2662 gt10j321 2-10R1C	PDF
K2662 Abstract: 2SK2662 2sk2662 equivalent Text: K2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2662 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance : \|Yfs\| = 4.0 S (typ.)	Original	2SK2662 K2662 2SK2662 2sk2662 equivalent	PDF
K2662 Abstract: No abstract text available Text: K2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2662 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.0 S (typ.)	Original	2SK2662 K2662	PDF
K2662 Abstract: 2SK2662 Text: T O SH IB A K2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV K2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 +0.3 • •	OCR Scan	2SK2662 20kii) C2662 K2662 2SK2662	PDF
2SK2662 Abstract: No abstract text available Text: TOSHIBA K2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV K2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 2.7± 0.2	OCR Scan	2SK2662 2SK2662	PDF
2SK2662 Abstract: No abstract text available Text: TOSHIBA K2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV K2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : Rd S(O N )- 1.350 (Typ.)	OCR Scan	2SK2662 2SK2662	PDF
2SK2662 Abstract: No abstract text available Text: TOSHIBA K2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV K2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10 ±0.3 r • Low Drain-Source ON Resistance	OCR Scan	2SK2662 2SK2662	PDF
K2662 Abstract: L122M 5Ft marking Text: TO SHIBA K2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV K2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : \|Yfs\|= 4.0S(Typ.)	OCR Scan	2SK2662 K2662 L122M 5Ft marking	PDF