K4S281632E
Samsung Electronics
K4S281632E 8M x 4-Bit x 4 Banks / 4M x 8-Bit x 4 Banks / 2M x 16-Bit x 4 Banks Sdram, Organization = 8Mx16, Bank/ Interface = 4B/LVTTL, Refresh = 4K/64ms, Speed = 60,75, Package = 54TSOP2, Power = C,l, Production Status = Mass Production
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K4S281632E-TC60
Samsung Electronics
128Mb SDRAM, 3.3V, LVTTL, 166MHz
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K4S281632E-TC75
Samsung Electronics
128Mb SDRAM, 3.3V, LVTTL, 166MHz
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K4S281632E-TC7C
Samsung Electronics
2M x 16-Bit x 4 banks synchronous DRAM LVTTL, 133MHz
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K4S281632E-TC(L)60
Samsung Electronics
128Mb E-die SDRAM Specification
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K4S281632E-TCL60
Samsung Electronics
128Mb SDRAM, 3.3V, LVTTL, 166MHz
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K4S281632E-TC(L)75
Samsung Electronics
128Mb E-die SDRAM Specification
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K4S281632E-TCL75
Samsung Electronics
128Mb SDRAM, 3.3V, LVTTL, 133MHz
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K4S281632E-TL60
Samsung Electronics
128Mb E-die SDRAM Specification
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K4S281632E-TL75
Samsung Electronics
128Mb E-die SDRAM Specification
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K4S281632E-TL7C
Samsung Electronics
2M x 16-Bit x 4 banks synchronous DRAM LVTTL, 133MHz
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