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K4S561633F Price and Stock

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Samsung Semiconductor K4S561633F-XN75000
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Bristol Electronics	K4S561633F-XN75000		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S561633FXN75 IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC
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Quest Components	K4S561633FXN75		7			1 - 10 - 100 - 1000 - 10000 -	Buy Now
SEC K4S561633F-XL75 Electronic Component
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ComSIT USA	K4S561633F-XL75		40			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K4S561633F Datasheets (11)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4S561633F		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-C		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-E		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-F1H		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-F1L		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-F75		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-G		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-L		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-N		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-X		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF
K4S561633F-XE		Samsung Electronics	4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC		Original	PDF

K4S561633F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K4S561633F Abstract: K4S561633F-X Text: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,	Original	PDF	K4S561633F 16Bit 54BOC K4S561633F-X
Untitled Abstract: No abstract text available Text: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,	Original	PDF	K4S561633F 16Bit 54BOC
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	PDF	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B