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    K4S640832 Search Results

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    K4S640832 Price and Stock

    Samsung Semiconductor K4S640832H-TC75

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    Bristol Electronics K4S640832H-TC75 348
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    Quest Components K4S640832H-TC75 255
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    K4S640832H-TC75 223
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    Samsung Semiconductor K4S640832F-TC75

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    Quest Components K4S640832F-TC75 90
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    K4S640832F-TC75 4
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    Samsung Semiconductor K4S640832E-TC75

    IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components K4S640832E-TC75 495
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    Samsung Semiconductor K4S640832D-TC1H

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    Quest Components K4S640832D-TC1H 4
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    Samsung Electronics Co. Ltd K4S640832K-UC75

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    Velocity Electronics K4S640832K-UC75 16
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    K4S640832 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S640832 Samsung Electronics IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC Original PDF
    K4S640832C Samsung Electronics 64Mbit SDRAM 2M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S640832C-TC/L10 Samsung Electronics 2M x 8-Bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 66MHz Original PDF
    K4S640832C-TC/L1H Samsung Electronics 2M x 8-Bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz Original PDF
    K4S640832C-TC/L1L Samsung Electronics 2M x 8-Bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz Original PDF
    K4S640832C-TC/L70 Samsung Electronics 2M x 8-Bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz Original PDF
    K4S640832C-TC/L80 Samsung Electronics 2M x 8-Bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz Original PDF
    K4S640832D Samsung Electronics 64Mbit SDRAM 2M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S640832D-TC/L10 Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 66 MHz (CL=2&3), interface LVTTL. Original PDF
    K4S640832D-TC/L1H Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S640832D-TC/L1L Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S640832D-TC/L75 Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S640832D-TC/L80 Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. Original PDF
    K4S640832E Samsung Electronics 2M x 8-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S640832E-TC1H Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 100MHz Original PDF
    K4S640832E-TC1L Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 100MHz Original PDF
    K4S640832E-TC75 Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 133MHz Original PDF
    K4S640832E-TL1H Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 100MHz Original PDF
    K4S640832E-TL1L Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 100MHz Original PDF
    K4S640832E-TL75 Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 133MHz Original PDF

    K4S640832 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S640832E 64Mbit K4S640832E A10/AP

    k4s641632n

    Abstract: K4S641632N-LC K4S640832N
    Text: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Pb-Free and Halogen Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S640832N K4S641632N A10/AP k4s641632n K4S641632N-LC K4S640832N

    Untitled

    Abstract: No abstract text available
    Text: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S640832E 64Mbit K4S640832E A10/AP

    K4S641632K

    Abstract: K4S640832K K4S641632
    Text: K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K4S640832K K4S641632K A10/AP K4S641632K K4S640832K K4S641632

    k4s641632n

    Abstract: No abstract text available
    Text: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4S640832N K4S641632N A10/AP k4s641632n

    K4S640832D

    Abstract: No abstract text available
    Text: K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May 1999 K4S640832D CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S640832D 64Mbit K4S640832D A10/AP

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function SDRAM CMOS Type J 1/1 E GEX-FM903XM/UC K4S640832E-TL1H Model VDD 1 54 VSS DQ0 2 53 DQ7 VDDQ 3 52 VSSQ NC 4 DQ1 5 VSSQ 6 NC 7 DQ2 8 VDDQ 9 NC 10 DQ3 11 VSSQ 12 NC 13 51 NC A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ7 : Data input/output


    Original     		PDF GEX-FM903XM/UC K4S640832E-TL1H A0-A11 A10/AP

    K4S640832F-TC

    Abstract: No abstract text available
    Text: K4S640832F CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640832F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S640832F 64Mbit 100MHz K4S640832F-TC

    Untitled

    Abstract: No abstract text available
    Text: K4S640832C CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Oct. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Oct.1999 K4S640832C CMOS SDRAM Revision History Revision 0.1 Oct. 02, 1999


    Original     		PDF K4S640832C 64Mbit K4S640832C A10/AP

    k4s641632n-lc

    Abstract: K4S641632N K4S640832N
    Text: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S640832N K4S641632N A10/AP k4s641632n-lc K4S641632N K4S640832N

    K4S640832F

    Abstract: No abstract text available
    Text: K4S640832F CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev.1.1 May. 2003 K4S640832F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S640832F 64Mbit 100MHz A10/AP K4S640832F

    K4S640832D-TC75

    Abstract: 16MX4 M390S0823DT1-C75 M390S1620DT1-C75
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM Registered SDRAM PC133 DIMM 168pin SPD Specification REV. 0.1 Oct. 1999 REV. 0.1 Oct. '99 SERIAL PRESENCE DETECT PC133 Registered DIMM M390S0823DT1-C75 •Organization : 8MX72 •Composition : 8MX8 *9 •Used component part # : K4S640832D-TC75


    Original     		PDF PC133 168pin) M390S0823DT1-C75 8MX72 K4S640832D-TC75 4K/64ms 128bytes 256bytes K4S640832D-TC75 16MX4 M390S0823DT1-C75 M390S1620DT1-C75

    K4S640832C

    Abstract: No abstract text available
    Text: K4S640832C CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S640832C CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S640832C 64Mbit K4S640832C A10/AP

    M366S1623DT0

    Abstract: M366S1623DT0-C75 K4S640832D-TC75
    Text: M366S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. Revision 0.1 (May, 2000) • Changed tOH parameter from 2.7ns to 3.0ns Revision 0.2 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics.


    Original     		PDF M366S1623DT0 PC133 PC100 M366S1623DT0 16Mx64 M366S1623DT0-C75 K4S640832D-TC75

    M374S1623DT0

    Abstract: M374S1623DT0-C7A
    Text: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF M374S1623DT0 PC133 M374S1623DT0 16Mx72 400mil M374S1623DT0-C7A

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    M374S1623ET0

    Abstract: M374S1623ET0-C1L
    Text: M374S1623ET0 PC100 Unbuffered DIMM M374S1623ET0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ET0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374S1623ET0 PC100 M374S1623ET0 16Mx72 400mil 168-pin M374S1623ET0-C1L

    Untitled

    Abstract: No abstract text available
    Text: M366S1623ETS PC133/PC100 Unbuffered DIMM M366S1623ETS SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623ETS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S1623ETS PC133/PC100 M366S1623ETS 16Mx64 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: PC100 Registered DIMM M377S0823FT3 M377S0823FT3 SDRAM DIMM Intel 1.2 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S0823FT3 is a 8M bit x 72 Synchronous


    Original     		PDF PC100 M377S0823FT3 M377S0823FT3 8Mx72 400mil 18-bits 24-pin 168pin

    DIMM 1999

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(64Mb C-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424CT0-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4


    Original     		PDF PC100 168pin) M366S0424CT0-C80/C1H/C1L 4Mx64 4Mx16 K4S641632C-TC80/C1H/C1L 375mil 4K/64ms DIMM 1999

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S0823FT1 PC133 Registered DIMM M390S0823FT1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S0823FT1 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M390S0823FT1 PC133 M390S0823FT1 8Mx72 400mil 18-bits 24-pin 168pin PC133 registered reference design

    K4S640432H-TC

    Abstract: K4S640832H K4S641632H K4S641632H-TC
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.3 October 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 October 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF A10/AP K4S640432H-TC K4S640832H K4S641632H K4S641632H-TC

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    K4S641632k uc60

    Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
    Text: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM


    Original     		PDF 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N