K4T1G084QF
Abstract: K4T1G164QF
Text: Rev. 1.1, Aug. 2010 K4T1G084QF K4T1G164QF 1Gb F-die DDR2 SDRAM Industrial 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4T1G084QF
K4T1G164QF
60FBGA/84FBGA
6-10per)
6-10per
K4T1G164QF
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K4T1G164QF
Abstract: K4T1G084QF-BI K4T1G084QF
Text: Rev. 1.2, Jan. 2012 K4T1G084QF K4T1G164QF 1Gb F-die DDR2 SDRAM Industrial 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4T1G084QF
K4T1G164QF
60FBGA/84FBGA
6-10per)
6-10per
K4T1G164QF
K4T1G084QF-BI
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K4T1G084QF
Abstract: K4T1G084QF-BCF7 K4T1G164QF-BCE CF745 Datum Electronics
Text: Rev. 1.0, May. 2010 K4T1G044QF K4T1G084QF K4T1G164QF 1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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Original
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K4T1G044QF
K4T1G084QF
K4T1G164QF
60FBGA/84FBGA
6-10per)
6-10per
K4T1G084QF-BCF7
K4T1G164QF-BCE
CF745
Datum Electronics
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K4T1G164QF-BCE7
Abstract: K4T1G164QF-BCF7 K4T1G164QF-BCE K4T1G164QF K4T1G084QF-BCE7 K4T1G044QF-BCF7 K4T1G084QF-BCF7 K4T1G044QF K4T1G084QFBCF7 K4T1G044QF-BCE7
Text: Rev. 1.1, Aug. 2010 K4T1G044QF K4T1G084QF K4T1G164QF 1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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Original
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K4T1G044QF
K4T1G084QF
K4T1G164QF
60FBGA/84FBGA
6-10per)
6-10per
K4T1G164QF-BCE7
K4T1G164QF-BCF7
K4T1G164QF-BCE
K4T1G164QF
K4T1G084QF-BCE7
K4T1G044QF-BCF7
K4T1G084QF-BCF7
K4T1G084QFBCF7
K4T1G044QF-BCE7
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K4T1G164QF-BCE7
Abstract: K4T1G164QF-BCF7 K4T1G164QF-BCE6 k4t1g164qf-bc K4T1G084QF-BCE7 K4T1G084QF K4T1G084QF-BCF7 K4T1G164QF CF745 k4t1g044qf
Text: Rev. 1.11, Sep. 2010 K4T1G044QF K4T1G084QF K4T1G164QF 1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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Original
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K4T1G044QF
K4T1G084QF
K4T1G164QF
60FBGA/84FBGA
6-10per)
6-10per
K4T1G164QF-BCE7
K4T1G164QF-BCF7
K4T1G164QF-BCE6
k4t1g164qf-bc
K4T1G084QF-BCE7
K4T1G084QF-BCF7
K4T1G164QF
CF745
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K4T1G164QF-BCF8
Abstract: K4T1G084QF-BCF8 k4t1g164qf K4T1G084QF DDR2-1066 K4T1G164QF-BC K4T1G084QF-BC
Text: Rev. 1.12, Sep. 2010 K4T1G084QF K4T1G164QF 1Gb F-die DDR2-1066 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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Original
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K4T1G084QF
K4T1G164QF
DDR2-1066
60FBGA/84FBGA
6-10per)
K4T1G164QF-BCF8
K4T1G084QF-BCF8
k4t1g164qf
K4T1G164QF-BC
K4T1G084QF-BC
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K4T1G164QF-BCE7
Abstract: K4T1G084QF-BCF7 CF745
Text: Rev. 1.2, Jul. 2011 K4T1G044QF K4T1G084QF K4T1G164QF 1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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Original
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K4T1G044QF
K4T1G084QF
K4T1G164QF
60FBGA/84FBGA
6-10per)
6-10per
K4T1G164QF-BCE7
K4T1G084QF-BCF7
CF745
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL495T5669E-E7S/E6S/D5S REV: 1.1 General Information 2GB 256Mx72 DDR2 SDRAM VLP ECC REGISTERED Mini-RDIMM 244-PIN Description The VL495T5669E is a 256Mx72 DDR2 SDRAM high density Mini-RDIMM. This memory module is dual rank,
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VL495T5669E-E7S/E6S/D5S
256Mx72
244-PIN
VL495T5669E
256Mx8
25-bit
244-pin
VN-281009
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Untitled
Abstract: No abstract text available
Text: SG2567FBD12852UU October 15, 2010 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG2567FBD12852SF 256Mx72 2GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 128Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant). IDT, Rev. L4
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SG2567FBD12852UU
SG2567FBD12852SF
256Mx72
240-pin
128Mx8
PC2-5300,
DDR2-667-555,
AMB0680L4RJ8
K4T1G084QF-BCE6
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K4T1G164QF
Abstract: 1GB DDR2 4 banks K4T51083QI-HCE7 K4T51163QI K4T1G164QQ-HC k4t51083qi m470t5663 K4T1G164QE samsung ddr2 240pin 1gb K4T1G164QE-HC
Text: Apr. 2010 DDR2 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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68Ball
10MAX
K4T1G164QF
1GB DDR2 4 banks
K4T51083QI-HCE7
K4T51163QI
K4T1G164QQ-HC
k4t51083qi
m470t5663
K4T1G164QE
samsung ddr2 240pin 1gb
K4T1G164QE-HC
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.3 09.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: • 200 Pin SO-DIMM SEN02G64C4BF2SA-25R 2GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 DDR2 533 MT/s CL4 Marking -25 -30
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SEN02G64C4BF2SA-25R
PC2-6400
2048MB
CH-9552
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M395T5163FB4
Abstract: No abstract text available
Text: Rev. 1.0, Jul. 2010 M395T2863FB4 M395T5663FB4 M395T5160FB4 M395T5163FB4 240pin Fully Buffered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M395T2863FB4
M395T5663FB4
M395T5160FB4
M395T5163FB4
240pin
128Mbx8
512Mx72
M395T5163FB4
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PDF
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K4T1G164QF
Abstract: M470T5663FB3-C
Text: Rev. 0.5, Apr. 2010 M470T2864FB3 M470T5663FB3 Preliminary 200pin Unbuffered SODIMM based on 1Gb F-die 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant CAUTION : This document includes some items still under discussion in JEDEC. Therefore, those may be changed without pre-notice based on JEDEC progress.
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M470T2864FB3
M470T5663FB3
200pin
60FBGA/84FBGA
128Mbx8
256Mx64
K4T1G084QF
K4T1G164QF
M470T5663FB3-C
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.2 09.11.2010 1GB DDR2 – SDRAM SO-DIMM Features: 200 Pin SO-DIMM • SEN01G64D1BF1SA-30R 1GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 Module density 1024MB with 8 dies and 1 rank
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SEN01G64D1BF1SA-30R
PC2-6400
1024MB
Ch-9552
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PDF
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Untitled
Abstract: No abstract text available
Text: SG5127FBD12852UU June 23, 2010 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG5127FBD12852SF 512Mx72 4GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 128Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant). Label:
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SG5127FBD12852UU
SG5127FBD12852SF
512Mx72
240-pin
128Mx8
PC2-5300,
DDR2-667-555,
PC2-5300F-555-11-ZZ
AMB0680L4RJ8
K4T1G084QF-BCE6
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PDF
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THP 100
Abstract: No abstract text available
Text: Rev. 1.2, Oct. 2010 M470T6464FBS M470T2863FB3 M470T2864FB3 M470T5663FB3 200pin Unbuffered SODIMM based on 1Gb F-die 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M470T6464FBS
M470T2863FB3
M470T2864FB3
M470T5663FB3
200pin
60FBGA/84FBGA
dK4T1G164QF
128Mbx8
256Mx64
THP 100
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.2 18.11.2010 1GB DDR2 – SDRAM UDIMM Features: 240 Pin UDIMM SEU01G64A3BF1SA-25R 1GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 • Module Density 1024MB with 8 dies and 1 rank
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SEU01G64A3BF1SA-25R
PC2-6400
MO-237.
2002/95/EC
CH-9552
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PDF
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K4T1G084QF-BCF7
Abstract: K4T1G084QF DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400 CB-173 K4T1G084QF-BC
Text: Product Specifications PART NO.: VL495T5669E-E7S/E6S/D5S REV: 1.1 General Information 2GB 256Mx72 DDR2 SDRAM VLP ECC REGISTERED Mini-RDIMM 244-PIN Description The VL495T5669E is a 256Mx72 DDR2 SDRAM high density Mini-RDIMM. This memory module is dual rank,
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VL495T5669E-E7S/E6S/D5S
256Mx72
244-PIN
VL495T5669E
256Mx8
25-bit
244-pin
VN-281009
K4T1G084QF-BCF7
K4T1G084QF
DDR2-533
DDR2-667
DDR2-800
PC2-5300
PC2-6400
CB-173
K4T1G084QF-BC
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PDF
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K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from
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BR-12-ALL-001
K4X2G323PD8GD8
K9HFGY8S5A-HCK0
K4H511638JLCCC
samsung eMMC 5.0
KLMBG4GE2A-A001
K9K8G08U0D-SIB0
K4X51163PK-FGD8
KLMAG2GE4A
k4h561638n-lccc
K4G10325FG-HC03
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 23.11.2010 2GB DDR2 – SDRAM registered DIMM Features: • 240 Pin RDIMM SEP02G72E2BF2SA-30R 2GB PC2-5300 in FBGA Technology RoHS compliant • Options: Data Rate / Latency DDR2 533 MTs / CL4 DDR2 667 MT/s / CL5
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SEP02G72E2BF2SA-30R
PC2-5300
2048MB
10rlin
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.2 09.11.2010 1GB DDR2 – SDRAM SO-DIMM Features: 200 Pin SO-DIMM • SEN01G64D1BF1SA-30R 1GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 Module density 1024MB with 8 dies and 1 rank
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SEN01G64D1BF1SA-30R
PC2-6400
1024MB
Ch-9552
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PDF
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serial presence detect samsung 2010
Abstract: M392T5663FB M392T5663FBA
Text: Rev. 1.0, Oct. 2010 M392T2863FBA M392T5663FBA M392T5660FBA 240pin VLP Registered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M392T2863FBA
M392T5663FBA
M392T5660FBA
240pin
serial presence detect samsung 2010
M392T5663FB
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PDF
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M378T5663FB3
Abstract: No abstract text available
Text: Rev. 1.0, Jul. 2010 M378T2863FBS M378T5663FB3 M391T2863FB3 M391T5663FB3 240pin Unbuffered DIMM based on 1Gb F-die 60 & 84 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M378T2863FBS
M378T5663FB3
M391T2863FB3
M391T5663FB3
240pin
K4T1G084QF
M378T5663FB3/M391T5663FB3
128Mbx8
128Mx72
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PDF
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M393T2863FBA-C
Abstract: serial presence detect samsung 2010 K4T1G084QF 800cl5 M393T5660FBA-C DDR2 DIMM
Text: Rev. 1.0, Jul. 2010 M393T2863FBA M393T5663FBA M393T5660FBA M393T5160FBA 240pin Registered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M393T2863FBA
M393T5663FBA
M393T5660FBA
M393T5160FBA
240pin
M393T2863FBA-C
serial presence detect samsung 2010
K4T1G084QF
800cl5
M393T5660FBA-C
DDR2 DIMM
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PDF
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