Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K4T51163QB Search Results

    K4T51163QB Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4T51163QB Samsung Electronics 512Mb B-die DDR2 SDRAM Original PDF
    K4T51163QB-GCCC Samsung Electronics Original PDF
    K4T51163QB-GCD5 Samsung Electronics Original PDF
    K4T51163QB-ZCCC Samsung Electronics Original PDF
    K4T51163QB-ZCD5 Samsung Electronics Original PDF

    K4T51163QB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M470T6554BZ0-CD5

    Abstract: DDR2 SODIMM SPD JEDEC DDR2-400 DDR2-533
    Text: SERIAL PRESENCE DETECT M470T6554BZ0-CD5/CCC Organization :64M x 64 Composition :32M x 16 * 8ea Used component part # :K4T51163QB-ZCD5/CC # of rows in module:2 Row # of banks in component :4 banks Feature :30mm height & double sided component Refresh :8K/64ms


    Original     		M470T6554BZ0-CD5/CCC K4T51163QB-ZCD5/CC 8K/64ms DDR2-533 DDR2-400 128bytes M470T6554BZ0-CD5 DDR2 SODIMM SPD JEDEC PDF

    M378T3354BZ3-CD5

    Abstract: K4T51163QBZCD5 m378t335 DDR2-400 DDR2-533 DDR2-400C
    Text: SERIAL PRESENCE DETECT M378T3354BZ3-CD5/CCC Organization :32M x 64 Composition :32M x 16 * 4ea Used component part # :K4T51163QB-ZCD5/CC # of rows in module:1 Row # of banks in component :4 banks Feature :30mm height & single sided component Refresh :8K/64ms


    Original     		M378T3354BZ3-CD5/CCC K4T51163QB-ZCD5/CC 8K/64ms DDR2-533 DDR2-400 128bytes M378T3354BZ3-CD5 K4T51163QBZCD5 m378t335 DDR2-400C PDF

    K4T51043QB-GCCC

    Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
    Text: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original     		512Mb K4T51043QB-GCCC K4T51043QB-GCE6 K4T51043QB-GLE6 PDF

    M378T6553

    Abstract: No abstract text available
    Text: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		256MB 512MB 240pin 64/72-bit K4T51083QB 32Mbx16 32Mx64/x72 M378T6553 PDF

    K4T51163QB-ZCCC

    Abstract: k4t51163qb-zcd5
    Text: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.4 February 2005 Page 1 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original     		512Mb DDR2-533 DDR2-400 K4T51043QB-GCD5 K4T51043QB-GCCC K4T51043QB-ZCD5 K4T51043QB-ZCCC K4T51163QB-ZCCC k4t51163qb-zcd5 PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.2 January 2005 Page 1 of 29 Rev. 1.2 Jan. 2005 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original     		512Mb 128Mx4 K4T51043QB-ZCD5 K4T51083QB-GCD5 64Mx8 K4T51083QB-ZCD5 K4T51163QB-GCD5 PDF

    DDR2 Mechanical Dimensions

    Abstract: 1GB DDR2 4 banks 32MX16 samsung ddr2 240pin 1gb udimm DDR2-533 K4T51163QB M378T3354BG samsung 512mb ddr cl3 dimm 32MBX16
    Text: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC sINFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		256MB, 512MB, 240pin 512Mb 64/72-bit K4T51163QB DDR2 Mechanical Dimensions 1GB DDR2 4 banks 32MX16 samsung ddr2 240pin 1gb udimm DDR2-533 K4T51163QB M378T3354BG samsung 512mb ddr cl3 dimm 32MBX16 PDF

    BA81-01580A

    Abstract: BA81-01581A PA 66 GF 15 venice 6.2 BA41-00524A MIC2568 BA81 BA59-01318A WM3B2200BG BA41-00520A
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st 6-1-1.Expl ode_Vi ew-Sorrento-Assy SAMSUNG X1 < 6 - 1 > Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st


    Original     		NP-X1-C000/SER BA97-02388A BA67-00280A BA75-012SUB 44to5 AD-6019 API1AD02) 90TO2 SWB-4000D BA81-01580A BA81-01581A PA 66 GF 15 venice 6.2 BA41-00524A MIC2568 BA81 BA59-01318A WM3B2200BG BA41-00520A PDF

    MMZ1608S121AT

    Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV


    Original     		945GMS BA41-00680A BA41-00683A Pag614 TP18615 TP18616 TP18617 TP18618 TP18619 TP18620 MMZ1608S121AT nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2 PDF

    DS493

    Abstract: No abstract text available
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC Revision 1.1 June 2004 Rev. 1.1 Jun. 2004 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information


    Original     		256MB, 512MB, 200pin 512Mb 64bit M470T3354BG 256MB 32Mx64 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		256MB, 512MB, 200pin 512Mb 64bit 64Mbx8 128Mx64 M470T2953BS PDF

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC Revision 1.3 February 2005 Rev. 1.3 Feb. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information


    Original     		256MB, 512MB, 200pin 512Mb 64bit M470T3354BG M470T3354BZ0-LD5/CC M470T6554BG PDF

    SODIMM DDR2

    Abstract: DDR2 SODIMM K4T5108 DDR2-400 DDR2-533 K4T51163QB M470T3354BG0
    Text: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information


    Original     		256MB, 512MB, 200pin 512Mb 64bit M470T3354BG0-CD5/CC 256MB 32Mx64 SODIMM DDR2 DDR2 SODIMM K4T5108 DDR2-400 DDR2-533 K4T51163QB M470T3354BG0 PDF

    DDR2 SDRAM ECC

    Abstract: 1GB DDR2 4 banks samsung m378 DDR2-667 K4T51163QB DDR2-533C
    Text: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered DIMM Ordering Information


    Original     		256MB 512MB 240pin 64/72-bit M378T3354BG0-CE6/D5/CC 256MB 32Mx64 DDR2 SDRAM ECC 1GB DDR2 4 banks samsung m378 DDR2-667 K4T51163QB DDR2-533C PDF

    AES2501

    Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :


    Original     		CONTROLLERP1311 TP1312 TP1313 TP1314 TP1251 TP1252 TP1253 TP1254 TP1255 TP1256 AES2501 ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip PDF

    PORON-HH48

    Abstract: BA42-00163A BA42-00133A l565 SMD RA15 4P SOT323 HD3 94V-0 KUBNKM088A AUO b513 E802
    Text: 10. Electrical Partlist Option SEC Code Main System Name Location BA44-00205A 60W_ADATOR LISHIN ADAPTOR BA46-04730A BIOS HDM-WXPP+F/W-EN G BIOS Spec. LF80539GF0282M,1.66GHz,64Bit,uFCPGA,478P,T R,Plastic,1.05V,31W, 0to+70C,2MB,32Bit M470T3354BG0,32Mx64Bit,SODIMM,200P,67.6x3


    Original     		BA31-00032A BA39-00570A BA39-00584A BA41-00596A BA42-00133A BA42-00150A BA43-00156A BA44-00162A BA44-00174A BA44-00205A PORON-HH48 BA42-00163A l565 SMD RA15 4P SOT323 HD3 94V-0 KUBNKM088A AUO b513 E802 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 1.1 June 2004 Rev. 1.1 Jun. 2004 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered DIMM Ordering Information


    Original     		256MB 512MB 240pin 64/72-bit M378T3354BG M378T6553BG M378T2953BG PDF

    Untitled

    Abstract: No abstract text available
    Text: 256MB,512MB,1GB Unbuffered DIMMs Preliminary DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 0.6 October 2003 Rev. 0.6 Oct. 2003 256MB,512MB,1GB Unbuffered DIMMs Preliminary DDR2 SDRAM Revision History


    Original     		256MB 512MB 240pin 64/72-bit K4T51083QB-GC/L# PDF

    k4t51163qb-gcd5

    Abstract: DDR-533
    Text: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.1 June 2004 Rev. 1.1 Jun. 2004 Page 1 of 26 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original     		512Mb 128Mx4 K4T51083QB-GCE6 64Mx8 32Mx16 K4T51163QB-ZCD5 K4T51163QB-ZCCC k4t51163qb-gcd5 DDR-533 PDF

    LA-2481

    Abstract: SIL1362 Llano CPU sld9630tt EDX20 compal TOSHIBA M9 CH7308 Llano C33056
    Text: A B C D E MODEL NAME : EDX20 PCB NO : LA-2481 1 PVT 1 COMPAL CONFIDENTIAL 2 2 EDX20 Schematics Document 2005-02-22 REV: 0.5 3 3 4 4 Compal Electronics, Inc. Title PROPRIETARY NOTE A B THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL AND


    Original     		EDX20 LA-2481 Febru7G110ZR. FDS4935A LA-2481 SIL1362 Llano CPU sld9630tt compal TOSHIBA M9 CH7308 Llano C33056 PDF

    ba41-01882a gbm

    Abstract: ICH7 amt 82801 g SCHEMATIC DIAGRAM c946 001 B34 SAMSUNG ELECTRONICS BA41 MT16 H1 cpu Yonah-2M EMC6N300 TP14995
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO PCB thickness: 1mm C


    Original     		945GM BA41-00602A/3A BA59-01851A A3212ELH/HED55XXU12 100nF BA59-01851A ba41-01882a gbm ICH7 amt 82801 g SCHEMATIC DIAGRAM c946 001 B34 SAMSUNG ELECTRONICS BA41 MT16 H1 cpu Yonah-2M EMC6N300 TP14995 PDF

    K4T51163QB-GCCC

    Abstract: K4T51043QB-GCCC K4T51083QB-GCCC DDR2 SDRAM component data sheet DDR2-400 DDR2-533 DDR2-667 K4T51043QB-GCD5 K4T51083QB-GCD5 K4T51163QB-GCD5
    Text: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.0 January 2004 Rev. 1.0 Jan. 2004 Page 1 of 26 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original     		512Mb DDR2-667 DDR2-533 DDR2-400 128Mx4 K4T51043QB-GCD5 K4T51043QB-GCCC K4T51163QB-GCCC K4T51043QB-GCCC K4T51083QB-GCCC DDR2 SDRAM component data sheet K4T51043QB-GCD5 K4T51083QB-GCD5 K4T51163QB-GCD5 PDF