K50T60 IGBT Search Results

K50T60 IGBT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

K50T60 IGBT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k50t60 Abstract: No abstract text available Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKW50N60T k50t60	PDF
Untitled Abstract: No abstract text available Text: TRENCHSTOP Series IKW50N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s	Original	IKW50N60T	PDF
k50t60 Abstract: k50t60 pdf datasheet IKW50N60T Q67040S4718 Datasheet k50t60 k50t6 TO-247AC Package igbt Text: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs	Original	IKW50N60T Dec-04 k50t60 k50t60 pdf datasheet IKW50N60T Q67040S4718 Datasheet k50t60 k50t6 TO-247AC Package igbt	PDF
k50t6 Abstract: k50t60 K50T Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode •            C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKW50N60T k50t6 k50t60 K50T	PDF
k50t60 Abstract: IKW50N60T k50t60 pdf datasheet k50t6 Datasheet k50t60 K50T k50t60 2 B PG-TO-247-3-21 *k50t60 IKW50N60 Text: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKW50N60T k50t60 IKW50N60T k50t60 pdf datasheet k50t6 Datasheet k50t60 K50T k50t60 2 B PG-TO-247-3-21 *k50t60 IKW50N60	PDF
K50T60 Abstract: Q67040S4718 IKW50N60T Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKW50N60T K50T60 Q67040S4718	PDF
k50t60 Abstract: K50t60 igbt Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKW50N60T k50t60 K50t60 igbt	PDF
IKW50N60T Abstract: K50T60 k50t60 pdf datasheet Datasheet k50t60 "Power Diode" 500V 20A 1280A PG-TO-247-3 Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKW50N60T IKW50N60T K50T60 k50t60 pdf datasheet Datasheet k50t60 "Power Diode" 500V 20A 1280A PG-TO-247-3	PDF