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    Toshiba America Electronic Components TK6A50D(STA4,Q,M)

    MOSFET N-CH 500V 6A TO220SIS
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    K6A5 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6A5 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    K6A5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6A53D

    Abstract: TK6A53D
    Text: K6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧


    Original     		TK6A53D K6A53D TK6A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK6A55DA PDF

    K6A50D

    Abstract: K*A50D TK6A50D
    Text: K6A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A50D スイッチングレギュレータ用 単位: mm : IDSS = 10 A (最大) 漏れ電流が低い。 A 3.9 3.0 : |Yfs| = 2.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		TK6A50D K6A50D K*A50D TK6A50D PDF

    K6A53D

    Abstract: TK6A53D
    Text: K6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧


    Original     		TK6A53D K6A53D TK6A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D PDF

    K6A55DA

    Abstract: TK6A55DA
    Text: K6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)


    Original     		TK6A55DA K6A55DA TK6A55DA PDF

    K6A53D

    Abstract: TK6A53D
    Text: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D K6A53D TK6A53D PDF

    K6A55DA

    Abstract: No abstract text available
    Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 Ω (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK6A55DA K6A55DA PDF

    K6A50D

    Abstract: TK6A50D
    Text: K6A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A50D スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.2 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2


    Original     		TK6A50D K6A50D TK6A50D PDF

    TK6A50D

    Abstract: k6a50d K6A5 TK6A K6a50
    Text: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK6A50D TK6A50D k6a50d K6A5 TK6A K6a50 PDF

    K6A53D

    Abstract: K6A5 TK6A53D
    Text: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D K6A53D K6A5 TK6A53D PDF

    K6A50D

    Abstract: TK6A TK6A50D K*A50D
    Text: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK6A50D K6A50D TK6A TK6A50D K*A50D PDF

    K6A55DA

    Abstract: VDD200 TK6A55DA
    Text: K6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)


    Original     		TK6A55DA K6A55DA VDD200 TK6A55DA PDF

    K6A55DA

    Abstract: TK6A55DA TK6A
    Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 Ω (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK6A55DA K6A55DA TK6A55DA TK6A PDF

    K6A50D

    Abstract: No abstract text available
    Text: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK6A50D K6A50D PDF

    K6A55DA

    Abstract: TK6A55DA K6A5 TK6A
    Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.26 Ω (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK6A55DA K6A55DA TK6A55DA K6A5 TK6A PDF

    Untitled

    Abstract: No abstract text available
    Text: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF