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Toshiba America Electronic Components TK8A55DA(STA4,Q,M) MOSFET N-CH 550V 7.5A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK8A55DA(STA4,Q,M)	Tube	48		1	1 $2.43 10 $2.43 100 $2.43 1000 $0.78958 10000 $0.715	Buy Now
Mouser Electronics	TK8A55DA(STA4,Q,M)					1 $2.18 10 $2.03 100 $1 1000 $0.723 10000 $0.715	Get Quote
Toshiba America Electronic Components TK8A55DA(STA4 Trans MOSFET N-CH 550V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK8A55DA(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK8A55DA(STA4	Tube		32 Weeks	50	1 - 10 - 100 $0.85228 1000 $0.7722 10000 $0.7722	Buy Now
Toshiba America Electronic Components TK8A55DA(STA4QM)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TK8A55DA(STA4QM)		145			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K8A55DA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k8a55da Abstract: TK8A55DA K8A55D k8a55 TK8A55D Text: K8A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K8A55DA ○ スイッチングレギュレータ用単位: mm : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 1.14 ± 0.15 0.69 ± 0.15 Ф0.2 M A 絶対最大定格 (Ta = 25℃)	Original	TK8A55DA k8a55da TK8A55DA K8A55D k8a55 TK8A55D	PDF
TK8A55DA Abstract: No abstract text available Text: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	TK8A55DA TK8A55DA	PDF
TK8A55DA Abstract: k8a55da Text: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	TK8A55DA TK8A55DA k8a55da	PDF
k8a55da Abstract: TK8A55DA K8A55D k8a55 TK8A55D TK8A55 Text: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	TK8A55DA k8a55da TK8A55DA K8A55D k8a55 TK8A55D TK8A55	PDF