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    K900 TRANSISTOR Search Results

    K900 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K900 TRANSISTOR Datasheets Context Search

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    K900 transistor

    Abstract: FX2N-1HC Transistor 1hc K4010 bfm 31 K1234 M8002 M8000 FX2N HARDWARE MANUAL Denki
    Text: 2 3.3 Buffer memories BFM WIRING BFM number PNP output encoders PNP output encoders 3.3k FX2N-1HC A24+ 1.5k A12+ 0.27k A5 + 0.1k A B24+ 2.2kW B12+ B5 + B 12 to 24V inputtable 1.5k XP24 0.5k XP 5 0.2k COMP 2.2kW 12 to 24V inputtaable XD24 XD 5 COMD Shielding Wire


    Original     		PDF JY992D65401B J24532 JY992D65401 JY992D65401A K900 transistor FX2N-1HC Transistor 1hc K4010 bfm 31 K1234 M8002 M8000 FX2N HARDWARE MANUAL Denki