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    K9E2G08U0M Search Results

    K9E2G08U0M Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K9E2G08U0M Samsung Electronics 256M x 8 Bits NAND Flash Memory Original PDF
    K9E2G08U0M-F Samsung Electronics 256M x 8 Bits NAND Flash Memory Original PDF
    K9E2G08U0M-FCB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48WSOP1 Original PDF
    K9E2G08U0M-FIB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48WSOP1 Original PDF
    K9E2G08U0M-P Samsung Electronics 256M x 8 Bits NAND Flash Memory Original PDF
    K9E2G08U0M-PCB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48TSOP I Original PDF
    K9E2G08U0M-V Samsung Electronics 256M x 8 Bits NAND Flash Memory Original PDF
    K9E2G08U0M-VCB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48WSOP1 Original PDF
    K9E2G08U0M-VIB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48WSOP1 Original PDF
    K9E2G08U0M-Y Samsung Electronics 256M x 8 Bits NAND Flash Memory Original PDF
    K9E2G08U0M-YCB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48TSOP I Original PDF
    K9E2G08U0M-YIB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 2GBIT 256MX8 48TSOP I Original PDF

    K9E2G08U0M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TwB 75

    Abstract: K9E2G08U0M K9E2G08U0M-V K9E2G08U0M-Y hamming code 512 bytes
    Text: Preliminary FLASH MEMORY K9E2G08U0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. June. 8th 2004 Advanced 0.1 1. Technical note is changed Oct. 25th 2004 Preliminary 0.2 1. The flow chart to creat the initial invalid block table is changed.


    Original     		K9E2G08U0M TwB 75 K9E2G08U0M K9E2G08U0M-V K9E2G08U0M-Y hamming code 512 bytes PDF

    multiplane

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9E2G08U0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. June. 8th 2004 Advanced 0.1 1. Technical note is changed 2. Note1 of Program/Erase characteristics is added


    Original     		K9E2G08U0M multiplane PDF

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand PDF