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    Samsung Semiconductor K9F1G08U0D-SCB0

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    K9F1G08 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K9F1G08D0M Samsung Electronics 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Original PDF
    K9F1G08D0M-PCB0 Samsung Electronics 128M x 8 Bit NAND Flash Memory Original PDF
    K9F1G08Q0A Samsung Electronics FLASH MEMORY Original PDF
    K9F1G08Q0M Samsung Electronics 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Original PDF
    K9F1G08Q0M-PCB0 Samsung Electronics 128M x 8 bit NAND flash memory, 1.70 - 1.95V Original PDF
    K9F1G08Q0M-PCB0 Samsung Electronics 128M x 8 Bit NAND Flash Memory Original PDF
    K9F1G08Q0M-PIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 1.70 - 1.95V Original PDF
    K9F1G08Q0M-YCB0 Samsung Electronics 1Gb Gb 1.8V NAND Flash Errata Original PDF
    K9F1G08Q0M-YIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 1.70 - 1.95V Original PDF
    K9F1G08R0A Samsung Electronics 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Original PDF
    K9F1G08U0A Samsung Electronics FLASH MEMORY Original PDF
    K9F1G08U0M Samsung Electronics 1Gb Gb 1.8V NAND Flash Errata Original PDF
    K9F1G08U0M-FCB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-FIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-PCB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-PIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-VCB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-VIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-YCB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-YIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF

    K9F1G08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 samsung 2GB X16 Nand flash SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability

    K9F1G08U0A-PCB0

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


    Original     		PDF K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns K9F1G08U0A-PCB0

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report

    K9F1G08U0C

    Abstract: K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08B0C K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report
    Text: Advance FLASH MEMORY K9F1G08B0C K9F1G08U0C K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08B0C K9F1G08U0C K9F1G08X0C K9F1G08U0C K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report

    K9F1G08D0M

    Abstract: K9F1G08U0M K9F1G08Q0M K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M K9F1G16U0M-PCB0
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		PDF K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M K9F1G16U0M-PCB0

    Untitled

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0

    K9F1G08U0AYCB0

    Abstract: K9F1G08U0A K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08
    Text: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


    Original     		PDF K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns 200mV K9F1G08U0AYCB0 K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


    Original     		PDF K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns

    K9F1G08Q0A

    Abstract: No abstract text available
    Text: K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle


    Original     		PDF K9F1G08Q0A K9F1G08U0A 100ns

    K9F1G08R0B-JIB0

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G08R0B K9F1G08R0B-JIB SAMSUNG 256Mb NAND Flash Qualification Reliability TADL samsung 8GB Nand flash samsung 2Gb nand flash K9F1G08R0B-JCB0
    Text: FLASH MEMORY K9F1G08R0B K9F1G08R0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08R0B 100ns) K9F1G08R0B-JIB0 SAMSUNG 4gb NAND Flash Qualification Report K9F1G08R0B K9F1G08R0B-JIB SAMSUNG 256Mb NAND Flash Qualification Reliability TADL samsung 8GB Nand flash samsung 2Gb nand flash K9F1G08R0B-JCB0

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History History Draft Date Remark 0.0 1. Initial issue July. 5. 2001


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report

    K9F1G08D0M

    Abstract: K9F1G08 K9F1G08Q0M K9F1G08Q0M-PCB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		PDF K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08 K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M

    K9F1G08U0AYCB0

    Abstract: K9F1G08X0A-XIB0 K9F1G08U0A SAMSUNG MCP K9F1G08U0A-PCB0 K9F1G08U0A-YCB0 K9F1G08U0A-Y K9F1G08Q0A K9F1G08U0A-VIB0 Samsung K9F1G08U0A
    Text: K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle


    Original     		PDF K9F1G08Q0A K9F1G08U0A 100ns K9F1G08U0AYCB0 K9F1G08X0A-XIB0 K9F1G08U0A SAMSUNG MCP K9F1G08U0A-PCB0 K9F1G08U0A-YCB0 K9F1G08U0A-Y K9F1G08Q0A K9F1G08U0A-VIB0 Samsung K9F1G08U0A

    K9F1G08U0

    Abstract: K9F1G08U0M-FCB0 K9F1G08Q0M-Y K9F1G08 K9F1G08X0M K9F1G08U0M-Y 27X16 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G08U
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		PDF K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08U0 K9F1G08U0M-FCB0 K9F1G08Q0M-Y K9F1G08 K9F1G08X0M K9F1G08U0M-Y 27X16 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G08U

    K9F1G08

    Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
    Text: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		PDF K9F1G08Q0A K9F1G08D0A K9F1G08U0A K9F1G08Q0A-Y K9F1G08 K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y

    K9F1G08U0A-PCB0

    Abstract: K9F1G08U0A K9F1G08X0A K9F1G08R0A K9F1G08R0A-J Samsung K9F1G08U0A K9F1G08 K9F1G08U0A-FIB0 K9F1G08U0AP FBGA 63
    Text: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY K9F1G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08R0A K9F1G08U0A K9K2G08U1A K9F1G08X0A 200mV K9F1G08U0A-PCB0 K9F1G08X0A K9F1G08R0A K9F1G08R0A-J Samsung K9F1G08U0A K9F1G08 K9F1G08U0A-FIB0 K9F1G08U0AP FBGA 63

    K9F1G08U0D-SCB0

    Abstract: K9F1G08U0D K9F1G08U0C K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D
    Text: FLASH MEMORY K9F1G08U0D K9F1G08U0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08U0D K9F1G08U0C 200us 700us K9F1G08U0D 250us 750us K9F1G08U0D-SCB0 K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14

    K9F1G08U0B-PCB0

    Abstract: K9F1G08U0B K9F1G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9F1G08U0B-PCB0 datasheet K9F1G08U0b-pcb K9F1G08U0B-XCB0 K9F1G08U0BPCB0 k9f1g08u0b-s k9f1g08u0b-xib0
    Text: FLASH MEMORY K9F1G08U0B K9XXG08UXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08U0B K9XXG08UXB K9F1G08U0B-PCB0 K9F1G08U0B K9F1G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9F1G08U0B-PCB0 datasheet K9F1G08U0b-pcb K9F1G08U0B-XCB0 K9F1G08U0BPCB0 k9f1g08u0b-s k9f1g08u0b-xib0

    Untitled

    Abstract: No abstract text available
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		PDF K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M

    ARM926T

    Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
    Text: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


    Original     		PDF MC9328MX21RM CH370 ARM926T ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    TAG 8926

    Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
    Text: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130


    Original     		PDF MCIMX31 MCIMX31L MCIMX31RM IOIS16 IOIS16/WP MCIMX31L TAG 8926 Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733

    iCreate Technologies

    Abstract: i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127
    Text: Create i5127-L i5127-L High-Speed USB Flash Disk Controller Data Sheet Version 0.90 Preliminary iCreate Technologies Corporation Release date: 2007/07/16 2007 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


    Original     		PDF i5127-L iCreate Technologies i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127