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    KA BAND HIGH POWER FET AMPLIFIER SCHEMATIC Search Results

    KA BAND HIGH POWER FET AMPLIFIER SCHEMATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    KA BAND HIGH POWER FET AMPLIFIER SCHEMATIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RO4403

    Abstract: ka band high power fet amplifier schematic OPAMP RF MODULATOR diode d1n4148 ka Band LNA, mixer Analog Voltage Variable Attenuator HMC346MS8G HMC346MS8G spice model HMC341 Voltage Controlled Attenuator
    Text: v00.0703 HMC346MS8G PRODUCT NOTE Designing With The HMC346MS8G Voltage Variable Attenuator General Description The HMC346MS8G is an absorptive Voltage Variable Attenuator VVA in an 8 lead surface-mount package operating from DC - 8 GHz. It features an on-chip reference attenuator for use with an external OpAmp to


    Original     		PDF HMC346MS8G RO4403 ka band high power fet amplifier schematic OPAMP RF MODULATOR diode d1n4148 ka Band LNA, mixer Analog Voltage Variable Attenuator HMC346MS8G spice model HMC341 Voltage Controlled Attenuator

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v00.0703 HMC346MS8G PRODUCT NOTE Designing With The HMC346MS8G Voltage Variable Attenuator


    Original     		PDF HMC346MS8G

    ka band high power fet amplifier schematic

    Abstract: No abstract text available
    Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description


    Original     		PDF

    12 volt-30 amp power diode

    Abstract: ka-band amplifier high power fet amplifier schematic fet ft 30 GHZ ka band high power fet amplifier schematic pHEMT transistor ka-band mixer 10 ghz driver amplifier FET differential amplifier circuit Ka-band
    Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description


    Original     		PDF

    AA038P5-00

    Abstract: No abstract text available
    Text: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features Chip Outline • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989


    Original     		PDF AA038P5-00 MIL-STD-883 8/00A AA038P5-00

    AA038P5-00

    Abstract: No abstract text available
    Text: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain Chip Outline 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989


    Original     		PDF AA038P5-00 MIL-STD-883 12/99A

    AA038P5-00

    Abstract: rf amplifier broad band
    Text: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features Chip Outline • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989


    Original     		PDF AA038P5-00 MIL-STD-883 8/00A AA038P5-00 rf amplifier broad band

    AA038P5-00

    Abstract: No abstract text available
    Text: 34–41 GHz GaAs MMIC Power Amplifier AA038P5-00 Features • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain Chip Outline 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989


    Original     		PDF AA038P5-00 MIL-STD-883 10/99A

    AA038P5-00

    Abstract: power amplifier 15 GHz dB dBm power amplifier 5 ghz ka band high power fet amplifier schematic 5.5 GHz power amplifier
    Text: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain Chip Outline 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989


    Original     		PDF AA038P5-00 MIL-STD-883 11/02A AA038P5-00 power amplifier 15 GHz dB dBm power amplifier 5 ghz ka band high power fet amplifier schematic 5.5 GHz power amplifier

    Untitled

    Abstract: No abstract text available
    Text: 30–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 18 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing


    Original     		PDF AA035P3-00 MIL-STD-883 10/99A

    AA028N2-00

    Abstract: preamplifier 2.4 ghz
    Text: Preliminary 25–32 GHz GaAs MMIC Low Noise Pre-Amplifier AA028N2-00 • 28 dB Typical Small Signal Gain 0.088 2.24 mm 0.091 (2.31 mm) ■ 2.5 dB Typical Noise Figure at 26 GHz 0.031 (0.79 mm) 0.043 (1.09 mm) ■ Single Bias Supply Operation (3.5 V or 5 V)


    Original     		PDF AA028N2-00 12/02A AA028N2-00 preamplifier 2.4 ghz

    ka band gaas MESfet

    Abstract: AA035P3-00
    Text: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing


    Original     		PDF AA035P3-00 gold-basedS11 1/01A ka band gaas MESfet AA035P3-00

    Untitled

    Abstract: No abstract text available
    Text: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing


    Original     		PDF AA035P3-00 MIL-STD-883 12/99A

    Untitled

    Abstract: No abstract text available
    Text: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing


    Original     		PDF AA035P3-00 8/00A

    AA028P1-00

    Abstract: No abstract text available
    Text: 27–29 GHz GaAs MMIC Power Amplifier AA028P1-00 Features Chip Outline • Single Bias Supply Operation 6 V 1.700 1.613 1.371 ■ 22 dBm Typical P1 dB Output Power at 28 GHz ■ 13.5 dB Typical Small Signal Gain 0.086 ■ 0.25 µm Ti/Pd/Au Gates 0.329 3.400


    Original     		PDF AA028P1-00 MIL-STD-883 12/99A AA028P1-00

    Untitled

    Abstract: No abstract text available
    Text: 27–29 GHz GaAs MMIC Power Amplifier AA028P1-00 Features Chip Outline • Single Bias Supply Operation 6 V 1.700 ■ 22 dBm Typical P1 dB Output Power at 28 GHz 1.613 1.371 ■ 13.5 dB Typical Small Signal Gain ■ 0.25 µm Ti/Pd/Au Gates 0.329 0.086 3.400


    Original     		PDF AA028P1-00 MIL-STD-883 07/01A

    AA038P5-00

    Abstract: No abstract text available
    Text: 34-41 GHz GaAs MMIC Power Amplifier ESAlpha AA038P5-00 Features Chip Outline • Single Bias Supply Operation 6 V ■ 21 dBm Saturated Output Power at 38 GHz 1 .7 0 0 - 1.588 1 .2 3 0 - ■ 19 dB Small Signal Gain ■ 0.25 (im Ti/Pd/Au Gates 0.000


    OCR Scan     		PDF AA038P5-00 MIL-STD-883 8/98A

    AA038P5-00

    Abstract: No abstract text available
    Text: 34-41 GHz GaAs MMIC Power Amplifier ESAlpha AA038P5-00 Features Chip Outline • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical Pi dB Output Power at 39 GHz ■ 0.25 ¡im Ti/Pd/Au Gates 0.000 ■ 100% On-Wafer RF and DC Testing


    OCR Scan     		PDF MIL-STD-883 10/99A AA038P5-00

    Untitled

    Abstract: No abstract text available
    Text: 23-30 GHz GaAs MMIC Power Amplifier ESAlpha AA028P4-00 Features Chip Outline • Single Bias Supply Operation 6 V ■ 26 dBm Output Power at 28 GHz 0.000 ■ 13.5 dB Small Signal Gain 0 .1 1 0 ■ 0.25 (im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing


    OCR Scan     		PDF AA028P4-00 MIL-STD-883 8/98A AA028P4-00 028P4-00

    Untitled

    Abstract: No abstract text available
    Text: 30-35 GHz GaAs MMIC Driver Amplifier ESAlpha AA035P3-00 Features Chip Outline • Single Bias Supply Operation 6 V C\J ■ 18 dB Small Signal Gain CO ■ 19 dBm Saturated Output Power at 35 GHz ■ 0.25 (im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing


    OCR Scan     		PDF AA035P3-00 MIL-STD-883 AA035P3-00 8/98A

    mmic s2

    Abstract: ka band high power fet amplifier schematic EM-33 AA028P1-00 ka band gaas MESfet alpha power supply MMIC amplifier Mt
    Text: 26-30 GHz GaAs MMIC Power Amplifier ESAlpha AA028P1-00 Chip Outline Features • Single Bias Supply Operation 6 V ■ 23 dBm Saturated Output Power at 28 GHz 1 .7 0 0 -1 .6 1 3 — f 1 .3 7 1 — 1 y -0 ■PIN ■ 15 dB Small Signal Gain Typical at 28 GHz


    OCR Scan     		PDF MIL-STD-883 2/99A AA028P1-00 2/99A mmic s2 ka band high power fet amplifier schematic EM-33 AA028P1-00 ka band gaas MESfet alpha power supply MMIC amplifier Mt

    Untitled

    Abstract: No abstract text available
    Text: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha AA032P1-00 Features Chip Outline • Single Gate and Drain Biases o ■ 27 dBm Output Power at 31 GHz ■ 12 dB Small Signal Gain ■ 0.25 im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883


    OCR Scan     		PDF AA032P1-00 MIL-STD-883 032P1-00 8/98A

    ka band power mmic

    Abstract: AA035P2-00 ka band high power fet amplifier schematic
    Text: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha A A 0 3 5 P 2 -0 0 Chip Outline Features • Single Gate and Drain Biases ■ 26 dBm Output Power at 35 GHz ■ 12 dB Small Signal Gain ■ 0.25 |im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883


    OCR Scan     		PDF MIL-STD-883 AA035P2-00 AA035P2-00 2/99A ka band power mmic ka band high power fet amplifier schematic

    Untitled

    Abstract: No abstract text available
    Text: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha A A 0 3 2 P 1 -0 0 Chip Outline Features • Single Gate and Drain Biases ■ 27 dBm Output Power at 31 GHz 0.120 ■ 12 dB Small Signal Gain ■ 0.25 |im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883


    OCR Scan     		PDF MIL-STD-883 032P1-00 2/99A