Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.
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C4159
P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
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Untitled
Abstract: No abstract text available
Text: Infrared Detectors with Built-in Preamplifiers Dewar Types Easy-to-use, high performance de vices with the ultimate in responsivity These devices combine a dewar type detector with a matched pream plifier into a metal case. Simply by connecting to a DC power supply,
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P3357-02)
P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
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G5832
Abstract: No abstract text available
Text: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de
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KIRD80039EA
P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
G5832
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Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec tively and the S/N ratio improved.
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P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
P2750,
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P4488
Abstract: G5832-05 G5832-11 KI80 pbse B1920-01 a7050
Text: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these
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P4488
P3514
KI80A0055EA
0G0470
P394A,
P3226-02
P791-11
P3207-04
P4115
K1713-01,
G5832-05
G5832-11
KI80
pbse
B1920-01
a7050
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G5832-01
Abstract: G5832
Text: InGaAs PIN Photodiodes Standard Types, Short-wavelength Enhanced Types, etc, High-performance NIR (Near Infrared) detectors with low noise • A wide line-up of device types are available: L a rg e a re a ty p es, sh o rt-w a v e len g th e n h an c e d ty p e s, etc.
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P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
000M7D3
G5832-01
G5832
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Infrared photodiode preamplifier
Abstract: No abstract text available
Text: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Two-color detectors cover a broad spectral response range, and are effectively used in such applications as flame monitors, spectro photometers and film thickness gauges.
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P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
000M7D3
Infrared photodiode preamplifier
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thermistor inas
Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
Text: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.
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KI80A0055EA
0G0470
P394A,
P3226-02
P791-11
P3207-04
P4115
K1713-01,
K3413-01,
P3981-01,
thermistor inas
INSB PHOTODIODE
101 thermistor
InSb spectral response
insb detector
preamplifier c4159
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pr 8501 b
Abstract: P394A P3226-02 P3226 PBS P394 series
Text: PbS Photoconductive Detectors Easy-to-use photoconductive detec tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame
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KI80A0055EA
0G0470
P394A,
P3226-02
P791-11
P3207-04
P4115
K1713-01,
K3413-01,
P3981-01,
pr 8501 b
P394A
P3226-02
P3226 PBS
P394 series
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lvds+20+pin+to+30+pin
Abstract: No abstract text available
Text: MCT HgCdTe Photoconductive Detectors ( Thermoelectric cooling assures stable operation over extended time periods t e -c o o m Types) :C 111 • Choice of spectral response The band gap of HgCdTe can be modified by controlling the compo sition ratio of HgTe and CdTe. Utilizing this fact, various types are
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P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
C4159,
lvds+20+pin+to+30+pin
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transistor C4159
Abstract: No abstract text available
Text: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a
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G6891,
G6893
P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
transistor C4159
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Untitled
Abstract: No abstract text available
Text: MEETbDT OGGHböb T HS Spectral Response 0.19 to 5 [im Type No. Outline No. P.36 Detector Element Active Area (mm) Shunt Resistance or Dark Resistance (MQ) Peak Photo Element Sensitivity Sensitivity Tempera Wavelength S ture Xp X.=?ip (-C ) (nm) (AW ) NEP
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K3413-03
4x101
3x10s
1x101
P3226-02
P394A,
P3207-04
P791-11
P4115
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P5138-025
Abstract: P5138-010
Text: MCT HgCdTe PhotOCOnductive DetectorS(Dewar Types) High sensitivity in the long wavelength range and high-speed response • Choice of spectral response The band gap of HgCdTe can be modified by controlling the compo sition ratio of HgTe and CdTe. Utilizing this fact, various types are
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KI80A0055EA
0G0470
P394A,
P3226-02
P791-11
P3207-04
P4115
K1713-01,
K3413-01,
P3981-01,
P5138-025
P5138-010
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