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    KM23C400 Search Results

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    KM23C400 Price and Stock

    Samsung Semiconductor KM23C4000C

    KM23C4000C
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    Quest Components KM23C4000C 100
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    Samsung Semiconductor KM23C4000B-15

    IC,ROM,512KX8,CMOS,DIP,32PIN,PLASTIC
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    Quest Components KM23C4000B-15 30
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    Samsung Semiconductor KM23C4000C-12

    IC,ROM,512KX8,CMOS,DIP,32PIN,PLASTIC
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    Quest Components KM23C4000C-12 1
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    ComSIT USA KM23C4000C-12 22,740
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    Samsung Semiconductor KM23C4000B-12

    Electronic Component
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    ComSIT USA KM23C4000B-12 2,200
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    KM23C400 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23C4000D-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000D-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000D-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DETY-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DETY-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DETY-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DG-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DG-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DG-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DTY-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DTY-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DTY-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF

    KM23C400 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original     		PDF KM23C4000D 512Kx8) 32-TSOP1-0820 331MAX 010TYP 047MAX

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original     		PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original     		PDF KM23C4000D 512Kx8) 32-TSOP1-0820 32-TSOP1-0820) 331MAX 047MAX

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original     		PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525

    mask rom

    Abstract: KM23C400
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original     		PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525 mask rom KM23C400

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 524,288x8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50m A(M ax.) Standby : 50|iA(M ax.)


    OCR Scan     		PDF KM23C4000D 512Kx8) 288x8 23C4000D 32-DIP-600 23C4000DG 32-SOP-525 23C4000D

    KM23C4001

    Abstract: No abstract text available
    Text: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using


    OCR Scan     		PDF KM23C4001 512Kx8) KM23C4001 288x8 150ns 32-pin, 600mll, b4142

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000B CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES • • • • • • • • • GENERAL DESCRIPTION 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50ftA (max.)


    OCR Scan     		PDF KM23C4000B 512Kx8) 120ns 50ftA 32-pin 23C4000B) KM23C4000BG

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable ROM organized 524,288 x 8bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all


    OCR Scan     		PDF KM23C4000D 512KX8) 32-TSQP1-0820 100pF KM2JC4000D KM23C4 TY-10 KMZ3C4000D

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000H G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288 x 8 brt. It Is fabricated using sillcon-gate CMOS process technology. • • •


    OCR Scan     		PDF KM23C4000H 512Kx8) 100ns 32-pin

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C4000D(E)TY is a fully static mask programm able • • • • 524,288 x 8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V


    OCR Scan     		PDF KM23C4000D 512Kx8) 23C4000D 32-TSO P1-0820 TY-10 TY-12

    KM23C4001b

    Abstract: mask rom TA-51
    Text: KM23C4001B G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization


    OCR Scan     		PDF KM23C4001B 512KX8) 120ns 32-pin, 600mll, 288x8 mask rom TA-51

    KM23C16005AG

    Abstract: 44TSOP2 44-TSOP2
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16


    OCR Scan     		PDF KM23C4000C KM23C4100C KM23C410OCET KM23C4200C 512Kx 512Kx8/256Kx16 512Kx8/256Kx16 KM23C16005AG 44TSOP2 44-TSOP2

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000H CMOS MASK ROM 4M-Bit 5 1 2K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 23 C 4 000 H is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 x 8 bit. It is fabricated using silicon -gate CMOS process tech nolog y


    OCR Scan     		PDF KM23C4000H 100ns 32-pin KM23C4000H) KM23C4000HG)

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E D 7^145 KM23C4000H G DDlb*Jflb 354 « S M C K CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 4 0 0 0 H is a fully static mask programmable R O M organized 524,288 x 8 bit. It is fabricated u sin g


    OCR Scan     		PDF KM23C4000H 512Kx8) 100ns 100//A 32-pin 23C4000H) 23C4000HG)

    NSI150

    Abstract: No abstract text available
    Text: KM23C4001H CMOS MASK ROM 4M-BH 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization


    OCR Scan     		PDF KM23C4001H 512Kx KM23C4001H 288x8 100ns 32-pin, 600mil, KM23C4001H) NSI150

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000B CMOS MASK ROM 4M-Bit 512Kx 8 CMOS MASK ROM FEATURES • • • • • • • • • 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50/iA (max.) Fully static operation


    OCR Scan     		PDF KM23C4000B 512Kx 120ns 50/iA 32-pin 32-pln KM23C4000B) KM23C4000BG)

    Untitled

    Abstract: No abstract text available
    Text: KM23C4001H G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Fast access time: 100ns (max.) Supply voltage: single + 5V Current consumption T h e K M 2 3C 4 0 01 H is a fu lly s ta tic m a s k p ro g ra m m a b le


    OCR Scan     		PDF KM23C4001H 512KX8) 100ns KM23C4001H) KM23C4001HG)

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C4001B 4M-Bit 512Kx8 CMOS MASK ROM FEATURES • • • • 524,288 X 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption O perating: 50mA (max.) • • • • • Fully static operation All inputs and outputs TTL compatible


    OCR Scan     		PDF KM23C4001B 512Kx8) 120ns 32-pin, 600mil, KM23C4001B KM23C4001B) KM23C4001BG)

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7Tb4142 KM23C4000B G GGlbTflE 70=5 CMOS MASK ROM 4M-Bit (512Kx&f CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using


    OCR Scan     		PDF 7Tb4142 KM23C4000B 512Kx 120ns 32-pin KM23C4000B) KM23C4000BG)

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E}TY CMOS MASK ROM 4M-Bit (512Kx8 CM O S M A SK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable RO M organized 524,288 x 8bit. It is fabricated using silicon gate C M O S process technology.


    OCR Scan     		PDF KM23C4000D 512Kx8) 32-TSO P1-0820 TY-10 TY-12

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000H CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •


    OCR Scan     		PDF KM23C4000H 512Kx8) 100ns 100/iA 32-pin KM23C4000H 288x8 4000H

    KM23C4000B

    Abstract: mask rom
    Text: CMOS MASK ROM KM23C4000B G 4M-Bit (512Kxfy CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF KM23C4000B 512Kxfy 32-DIP, KM23C4000BG 32-SOP, 120ns mask rom

    Untitled

    Abstract: No abstract text available
    Text: KM23C4001A CMOS MASK ROM 4M-Bit 512K x8 CMOS MASK ROM FEATURES • • • • 524,288 x 6 bit organization Fast access time: 150ns (max.) Supply voltage: single + 5V Current consumption O perating: 50mA (max.) • • • • • Fully static operation


    OCR Scan     		PDF KM23C4001A 150ns 32-pin, 600mil, KM23C4001A operation23C4001A KM23C4001A) KM23C4001AG)