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    KM23C4100DG Search Results

    KM23C4100DG Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23C4100DG-10 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DG-12 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DG-8 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF

    KM23C4100DG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40DIP600

    Abstract: 40-DIP-600
    Text: KM23C4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption


    Original
    PDF KM23C4100D 512Kx8 /256Kx16) KM23C4100D 40-DIP-600 KM23C4100DG 40-SOP-525 015MIN 40DIP600 40-DIP-600

    40DIP600

    Abstract: 40-DIP-600 AMP40
    Text: KM23C4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption


    Original
    PDF KM23C4100D 512Kx8 /256Kx16) KM23C4100D 40-DIP-600 KM23C4100DG 40-SOP-525 015MIN 40DIP600 40-DIP-600 AMP40

    Untitled

    Abstract: No abstract text available
    Text: KM23C4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time . 80ns(Max.) • Supply voltage : single +5V • Current consumption


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    PDF KM23C4100D 512Kx8 /256Kx16) 50jiA KM23C4100D 40-DIP-600 KM23C41OODG 40-SQP-525 KM23C41 100pF