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    KM23V32005BG Search Results

    KM23V32005BG Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23V32005BG Samsung Electronics 32M-Bit (4Mx8/2Mx16) COMS MASK ROM Original PDF
    KM23V32005BG-10 Samsung Electronics 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Original PDF
    KM23V32005BG-12 Samsung Electronics 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Original PDF
    KM23V32005BG-15 Samsung Electronics 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Original PDF

    KM23V32005BG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM23V32005BG

    Abstract: KM23V32005BG-10 KM23V32005BG-12 KM23V32005BG-15
    Text: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access


    Original
    PDF KM23V32005BG 32M-Bit /2Mx16) 304x8 152x16 100ns 44-SOP-600 KM23V32005BG KM23V32005BG-10 KM23V32005BG-12 KM23V32005BG-15

    Untitled

    Abstract: No abstract text available
    Text: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access


    Original
    PDF KM23V32005BG 32M-Bit /2Mx16) 304x8 152x16 100ns 44-SOP-600 KM23V32005BG

    KM23V32005BG

    Abstract: KM23V32005BG-10 KM23V32005BG-12 KM23V32005BG-15
    Text: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access


    Original
    PDF KM23V32005BG 32M-Bit /2Mx16) 304x8 152x16 100ns 44-SOP-600 KM23V32005BG KM23V32005BG-10 KM23V32005BG-12 KM23V32005BG-15

    a11y

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23V32005BG 32M-Bit 4Mx8 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Tim e : 100ns(M ax.) Page Access Tim e : 30ns(M ax.) • 8 w ords /1 6 bytes page access


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    PDF KM23V32005BG 32M-Bit 2Mx16) 304x8 152x16 100ns 23V32005BG 44-SQP-600 23V32005BG a11y

    Untitled

    Abstract: No abstract text available
    Text: KM23V32005BG CMOS Mas k ROM ELECTRONICS 32M-BÜ 4M X 8/2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time Random A cce ss: 100ns (max.) Page A ccess: 30ns(max.)


    OCR Scan
    PDF KM23V32005BG 32M-BÃ 100ns 44-SQP-600 KM23V32005BG

    Untitled

    Abstract: No abstract text available
    Text: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2 l097,1S2x16(word mode) The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is


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    PDF KM23V32005BG 32M-Bit /2Mx16) 304x8 1S2x16 KM23V32005BG 152x16 KM23V 5BG-10

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


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    PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    KM23C16005AG

    Abstract: 44TSOP2 44-TSOP2
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16


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    PDF KM23C4000C KM23C4100C KM23C410OCET KM23C4200C 512Kx 512Kx8/256Kx16 512Kx8/256Kx16 KM23C16005AG 44TSOP2 44-TSOP2

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


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    PDF KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T

    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


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    PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12