Untitled
Abstract: No abstract text available
Text: KM29V32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.) 2. Removed reverse type package.
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KM29V32000TS
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KM29N32000
Abstract: KM29V32000TS
Text: KM29V32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.) 2. Removed reverse type package.
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PDF
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KM29V32000TS
KM29V32000
KM29N32000
KM29W32000
KM29N32000
KM29V32000TS
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KM29N32000
Abstract: KM29V32000IT KM29V32000T KM29W32000
Text: KM29V32000T, KM29V32000IT FLASH MEMORY Document Title 4M x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.) 2. Removed reverse type package.
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KM29V32000T,
KM29V32000IT
KM29V32000
KM29N32000
KM29W32000
KM29N32000
KM29V32000IT
KM29V32000T
KM29W32000
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400F
Abstract: KM29N32000 KM29W32000IT KM29W32000T
Text: KM29W32000T, KM29W32000IT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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Original
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PDF
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KM29W32000T,
KM29W32000IT
KM29V32000
KM29N32000
KM29W32000
400F
KM29N32000
KM29W32000IT
KM29W32000T
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KM29N32000TS
Abstract: KM29N32000 km29n32
Text: KM29N32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.) 2. Removed reverse type package.
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Original
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PDF
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KM29N32000TS
KM29V32000
KM29N32000
KM29W32000
KM29N32000TS
KM29N32000
km29n32
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KM29W32000AIT
Abstract: KM29N32000 400F KM29W32000AT flash row column read write "program and data" 19 Resister 0805 samsung
Text: KM29W32000AT, KM29W32000AIT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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Original
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PDF
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KM29W32000AT,
KM29W32000AIT
KM29V32000
KM29N32000
KM29W32000
KM29W32000AIT
KM29N32000
400F
KM29W32000AT
flash row column read write "program and data" 19
Resister 0805 samsung
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Untitled
Abstract: No abstract text available
Text: KM29V32000TS FLASH MEMORY Document Tills 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
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KM29V32000TS
29V32000
KM29N32000
KM29W32000
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KM29V32000TS
Abstract: No abstract text available
Text: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29V32000TS
250us
KM29V32000TS
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Untitled
Abstract: No abstract text available
Text: KM29V32000T, KM29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
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KM29V32000T,
KM29V32000IT
29V32000
KM29N32000
KM29W32000
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b8331
Abstract: No abstract text available
Text: KM29V32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - vo lt Supply The K M 29V 32000T S /R S is a 4 M 4,19 4 ,3 0 4 x8 bit N AND • Organization Flash m em ory w ith a spare 128K (131,072)x8 bit. Its NAND
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KM29V32000TS/RS
250us
32000T
b8331
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EM 319
Abstract: em319 GD5434
Text: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply T he KM 29V 32000T /R is a 4 M 4 ,19 4 ,3 0 4 x8 b it N AND • O rganization Flash m e m ory w ith a sp are 1 2 8 K (1 3 1,0 72 )x8 bit. - M em ory Cell Array
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KM29V32000T/R
250us
\256Byte\
bH14H
EM 319
em319
GD5434
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Untitled
Abstract: No abstract text available
Text: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V32000T/R is a 4M 4,194,304 x8 bit NAND • Organization Flash memory with a spare 128K(131,072)x8 bit. - Memory Cell Array : (4M +128K)bit x 8bit
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KM29V32000T/R
KM29V32000T/R
528-byte
250ns
Q02435Ã
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KM29N32000
Abstract: KM29V32000IT KM29V32000T scheme electronics
Text: KM29V32000T, KM29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date o.o Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
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KM29V32000T,
KM29V32000IT
KM29V32000
KM29N32000
KM29W32000
KM29N32000
KM29V32000IT
KM29V32000T
scheme electronics
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03f hall
Abstract: No abstract text available
Text: KM29V32000T, KM29V32000IT FLASH MEMORY Document Xiflo 4M x 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBERS p a ra m e te r: 5m s Typ. —> 2m s(Typ.) 2. Removed reverse type package.
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KM29V32000T,
KM29V32000IT
KM29V32000
KM29N32000
KM29W32000
03f hall
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Z359
Abstract: rb414 7-it4142
Text: KM 29V 3 2 00 0 T S Flash ELEC TRO NIC S 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K Dit x 8bit The KM29V32000TS/RS is a 4M(4,194,304)xB bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND
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KM29V32000TS
250us
Z359
rb414
7-it4142
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KM29N16000TS
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction 2. Product Guide 3. Ordering information II. 4M FLASH MEMORY 1. KM29N040T 5.0V / 512K x8 bit 17 2. KM29V040T 3.3V / 512K x8 bit 36 57 16M FLASH MEMORY IV. V. 1. KM29N16000T7R 5.0V / 2M 2. KM29N16000TS/RS
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KM29N040T
KM29V040T
KM29N16000T7R
KM29N16000TS/RS
KM29N16000ET/R
KM29N16000ETS/RS
29N16000AT/R
KM29N16000ATS/RS
KM29V16000AT/R
KM29V16000ATS/RS
KM29N16000TS
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Untitled
Abstract: No abstract text available
Text: KM29N32000T, KM29N32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision History Revision No. History Draft Date o.o Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
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KM29N32000T,
KM29N32000IT
29V32000
KM29N32000
KM29W32000
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29N32
Abstract: No abstract text available
Text: FLASH MEMORY KM29N32000T, KM29N32000IT Document Title 4M x 8 bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
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OCR Scan
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KM29N32000T,
KM29N32000IT
29V32000
KM29N32000
KM29W32000
29N32
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th Final 1998 The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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OCR Scan
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PDF
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KM29W32000TS
29V32000
KM29N32000
KM29W32000
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Untitled
Abstract: No abstract text available
Text: KM29 V32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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V32000T
250us
KM29V32000T)
003iA
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511ML
Abstract: 243L3 tsop 338 IR
Text: FLASH M EM ORY KM 29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4 M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 1S)Byte
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OCR Scan
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KM29V32000TS/RS
250us
0D243A2
511ML
243L3
tsop 338 IR
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29N32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
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OCR Scan
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KM29N32000TS
29V32000
KM29N32000
KM29W32000
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W32000T, KM29W32000IT 4M X 8 Bit NAND Flash Mem ory History D raft Date R e m a rk 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final Revision No. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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OCR Scan
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PDF
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KM29W32000T,
KM29W32000IT
KM29V32000
KM29N32000
KM29W32000
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Untitled
Abstract: No abstract text available
Text: MEM ORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density 4M bit Org. rower Supply 512Kx 8 5V ±10% 3.3V±10% 16M bit 2M x 8 5V ±10% Part Number KM29N040T Features Package 32B Page Mode 4K B Block size 44 40 T S O P II tR C = 120ns = 20us tRC=80ns 256B Page Mode
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512Kx
KM29N040T
KM29V040T
16000T/R
KM29N16000TS/RS
KM29N16000ET/ER
29N16000ETS/ERS
120ns
KM29N16000AT/AR
KM29N16000ATS/ARS
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