KM416S1021C
Abstract: KM416S1021CT-G7 KM416S1021CT-G8 KM416S1021CT-GS
Text: Preliminary CMOS SDRAM KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs
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Original
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KM416S1021C
16Bit
KM416S1021C
A10/AP
KM416S1021CT-G7
KM416S1021CT-G8
KM416S1021CT-GS
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PDF
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KM416S1021C
Abstract: KM416S1021CT-G7 KM416S1021CT-G8 KM416S1021CT-GS
Text: Preliminary CMOS SDRAM KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs
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Original
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KM416S1021C
16Bit
KM416S1021C
KM416S1021CT-G7
KM416S1021CT-G8
KM416S1021CT-GS
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PDF
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SDRAM 1996
Abstract: No abstract text available
Text: KM416S1021BT SDRAM ELECTRO NICS 512K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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OCR Scan
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KM416S1021BT
16Bit
KM416S1020B/KM416S1021B
hig1996
003300fci
50-TSOP2-400F
50-TSOP2-400R
D03b2b2
SDRAM 1996
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PDF
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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OCR Scan
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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PDF
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Untitled
Abstract: No abstract text available
Text: KM416S1020BT SDRAM ELECTRONICS 512K x 16B itx2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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OCR Scan
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KM416S1020BT
KM416S1020B/KM416S1021B
50-TSOP2-400F
50-TSOP2-400R
D03b2b2
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KM416S1021C CMOS SDRAM 512Kx 16Bitx 2 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply > SSTL_3 Class II compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs
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OCR Scan
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KM416S1021C
512Kx
16Bitx
KM416S1021C
10/AP
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PDF
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