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    Samsung Semiconductor KM416V254DT-16

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    Bristol Electronics KM416V254DT-16 44
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    Samsung Semiconductor KM416V254DT-6

    IC,DRAM,EDO,256KX16,CMOS,TSOP,44PIN,PLASTIC
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    Quest Components KM416V254DT-6 420
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    KM416V254DT-6 37
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    KM416V254DT Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V254DT-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DT-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DT-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period Original PDF
    KM416V254DT-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DTL-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Original PDF
    KM416V254DT-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DTL-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Original PDF
    KM416V254DTL-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Original PDF

    KM416V254DT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V254DT-L6T 1/2 IL08 4 M (256 K x 16)-BIT DRAM WITH EXTENDED DATA OUT —TOP VIEW— VCC 1 40 GND DQ0 I/O 2 39 DQ15 I/O DQ1 I/O 3 38 DQ14 I/O DQ2 I/O 4 37 DQ13 I/O DQ3 I/O 5 36 DQ12 I/O VCC 6 35 GND DQ4 I/O 7 34 DQ11 I/O DQ5 I/O 8 33 DQ10 I/O DQ6 I/O 9


    Original     		KM416V254DT-L6T PDF

    C254D

    Abstract: No abstract text available
    Text: KM416V254DT ELECTRONICS CMOS DR AM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416V254DT 256Kx16 6V254DT b4142 003245b C254D PDF

    Untitled

    Abstract: No abstract text available
    Text: KM4 1 6 V 2 5 4 D T CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		256Kx16 KM416V254DT 324Sb PDF