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    KM616V1002AJ Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V1002AJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-17 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF

    KM616V1002AJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM616V1002A

    Abstract: SRAM sheet samsung
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    Original     		KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A SRAM sheet samsung PDF

    KM616V1002A

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original     		KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A PDF

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original     		10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY PDF

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12 PDF

    UM61256FK-15

    Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch


    Original     		74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17: KM616V1002A-20 KM616VF I/016 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002A 576-bit PDF

    256x16* STATIC RAM

    Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
    Text: Advanced information KM616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-400 256x16* STATIC RAM 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP PDF

    KM616V1002A

    Abstract: N-319
    Text: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		KM616V1002A KM616V1002A-12 KM616V1002A-15 KM616V1002A-17: 180mA KM616V1002A-20 I/O9-I/O16 KM616V1002AJ 44-SOJ-400 KM616V1002AT KM616V1002A N-319 PDF

    KM616V1002A

    Abstract: tba 231
    Text: KM616V1002A CMOS SRAM 6 4Kx16Bi t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) O perating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		KM616V1002A KM616V1002A-12 KM616V1002A-15: KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-4CIO KM616V1002AT 44-TSOP2-400F KM616V1002A tba 231 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly


    OCR Scan     		KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15 KM616V1002A/AL-17 KM616V1002A/AL-20 Pi-400 44-TSOP2-400F 003124b PDF

    DD312

    Abstract: ics 0741 D0312
    Text: KM616V1002A/AL E l C iv CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns( Max. ) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) 0.5 mA(Max.) ; L-veronly


    OCR Scan     		KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15: KM616V1002A/AL-17 KM616V1002A/AL-20 I/016 KM616V1002AJ/ALJ 44-S002 44-TSOP2-400F DD312 ics 0741 D0312 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A CMOS SRAM 6 4 Kx16Bi t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL bESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		KM616V1002A Kx16Bi KM616V1002A-12 KM616V1002A-15: KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-4CIO KM616V1002AT 44-TSOP2-4Ã PDF